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Бакеренков, Александр Сергеевич

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Институт нанотехнологий в электронике, спинтронике и фотонике

Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.

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Бакеренков

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Александр Сергеевич

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Теперь показываю 1 - 10 из 21

Только метаданные
Correlation between temperature and dose rate dependences of input bias current degradation in bipolar operational amplifiers
(2019) Bakerenkov, A.; Pershenkov, V.; Felitsyn, V.; Rodin, A.; Telets, V.; Belyakov, V.; Zhukov, A.; Glukhov, N.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич; Жуков, Александр Иванович
© 2019 IEEE.It was demonstrated experimentally that in ELDRS-susceptible operational amplifiers elevated temperature irradiation increases degradation rate of input bias current, while in ELDRS-free devices degradation rates at room and elevated temperatures are approximately equal.
Только метаданные
Modeling of silicon-germanium heterojunction bipolar transistors
(2019) Bakerenkov, A. S.; Felitsyn, V. A.; Rodin, A. S.; Bursian, Y. D.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич
© Published under licence by IOP Publishing Ltd. The results of measurements of current-voltage characteristics of SiGe transistors for different temperatures are presented. The extraction results of parameters of test structures of the silicon-germanium SiGe bipolar transistors are presented.
Только метаданные
Influence of temperature and electrical modes on radiation sensitivity and errors of RADFETs
(2019) Podlepetsky, B. I.; Pershenkov, V. S.; Bakerenkov, A. S.; Felitsyn, V. A.; Rodin, A. S.; Подлепецкий, Борис Иванович; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич
© 2019 IEEE.Influence of temperature and electrical modes on sensitivity and errors of ionizing radiation dose senor based on n- MOSFET (called as RADFET) have been investigated. There were measured the circuit's output voltages being equal to the gate voltage of RADFET-based dosimeter as function of the radiation doses at const values of the drain current and the drain - source voltage (conversion functions), as well as the current - voltage characteristics before, during and after irradiations at different temperatures. We showed how conversion functions, radiation sensitivities and errors are depending on the temperature and electrical modes. It is found that the conversion functions) have two characteristic regions for low and high doses (with negative and with positive radiation sensitivities). To interpret experimental data there were proposed the models of conversion function, its components and errors taking into account the separate contributions of charges in the dielectric and in SiO2-Si interface. Proposed models interpreting the experimental data can be used to predict performances of RADFET-based dosimeters.
Только метаданные
“True” dose rate effect of the eldrs conversion model
(2020) Pershenkov, V. S.; Bakerenkov, A. S.; Telets, V. A.; Belyakov, V. V.; Felitsyn, V. A.; Rodin, A. S.; Бакеренков, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич; Родин, Александр Сергеевич
© Springer Nature Switzerland AG 2020.Modification of the ELDRS (Enhanced Low Dose Rate Sensitivity) conversion model is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge takes into account. It leads to dependence of the accumulation of radiation-induced oxide charge and interface traps on the dose rate. In enhancement version the ELDRS conversion model describes the low dose rate effect as “true” dose rate effect.
Только метаданные
Testing for Enhanced Low Dose Rate Sensitivity and Reduced Low Dose Rate Sensitivity Bipolar Devices
(2021) Pershenkov, V. S.; Felitsyn, V. A.; Bakerenkov, A. S.; Rodin, A. S.; Telets, V. A.; Belyakov, V. V.; Kovsharov, I. D.; Zhukov, A. I.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич; Ковшаров, Илья Дмитриевич; Жуков, Александр Иванович
© 2021 IEEE.A possible influence of location of the effective Fermi level in the forbidden gap of the surface base region on dose rate sensitivity of bipolar integrated circuits was described. Also, it is shown, that the position of the effective Fermi level leads to different behavior of bipolar devices during post-irradiation annealing at enhanced temperature. Experimental tests on dose rate sensitive devices were provided and discussed.
Только метаданные
ENHANCED LOW DOSE RATE SENSITIVITY (ELDRS) AND REDUCED LOW DOSE RATE SENSITIVITY (RLDRS) IN BIPOLAR DEVICES.
(2020) Pershenkov, V. S.; Bakerenkov, A. S.; Rodin, A. S.; Felitsyn, V. A.; Zhukov, A. I.; Telets, V. A.; Belyakov, V. V.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Жуков, Александр Иванович; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич
Possible physical mechanism of enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate sensitivity (RLDRS) in bipolar devices is described. Modification of the low dose rate conversion model is presented. The enhanced or reduced sensitivity can be connected with a specific position of the effective Fermi level relatively acceptor and donor radiation-induced interface traps. The qualitative and quantitative analysis of the low dose rate effects is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge were taken into account. It leads to dependence of the accumulation of radiation-induced oxide charge and interface traps on the dose rate. In enhancement version the ELDRS and RLDRS conversion model describes the low dose rate effect in as "true" dose rate effect.
Только метаданные
Radiation Hardened Analog-to-Digital Convertor with Automatic Offset Voltage Compensation
(2019) Felitsyn, V. A.; Bakerenkov, A. S.; Zhukov, A. I.; Butuzov, V. A.; Bocharov, Y. I.; Pershenkov, V. S.; Rodin, A. S.; Telets, V. A.; Belyakov, V. V.; Бакеренков, Александр Сергеевич; Жуков, Александр Иванович; Бутузов, Владимир Алексеевич; Бочаров, Юрий Иванович; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич
© 2019 IEEE.Radiation hardened ADC with automatic offset voltage compensation was developed. TID radiation effect in the ADC was investigated at different temperatures. The designed ADC devices demonstrate high radiation hardness. Up to total dose level 100 krad(Si) any significant radiation induced drift didn't observed in transfer characteristics of all irradiated devices. It is achieved by using techniques such as application of automatic offset voltage compensation circuit together with enclosed layout transistors (ELT), located in ADC control logic. Also, edge-less n-channel MOSFETs with additional guard rings were used to increase the radiation hardness of digital interface and control logic of ADC. In contrast with control logic ELT not used in interface logic. Thus significant degradation of digital interface power supply current was observed unlike control logic power supply. Developed device can be considered as a good technical decision for self-diagnostic systems of electronic devices proposed for application under ionizing radiation impact, especially for systems of spacecrafts and satellites.
Только метаданные
Experimental Estimation of Input Offset Voltage Radiation Degradation Rate in Bipolar Operational Amplifiers
(2019) Bakerenkov, A.; Pershenkov, V.; Felitsyn, V.; Rodin, A.; Telets, V.; Belyakov, V.; Zhukov, A.; Glukhov, N.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич; Жуков, Александр Иванович
© 2019 IEEE.Radiation degradation rate of input offset voltage in bipolar operational amplifiers was estimated experimentally. High degradation rate was observed in devices with high input offset voltage initial values and temperature drifts. Obtained results were discussed.
Только метаданные
Reduced Low Dose Rate Sensitivity (RLDRS) in Bipolar Devices
(2019) Pershenkov, V.; Bakerenkov, A.; Rodin, A.; Felitsyn, V.; Telets, V.; Belyakov, V.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич
© 2019 IEEE.Possible physical mechanism of reduced low dose rate sensitivity in bipolar devices is described. The reduced sensitivity can be connected with a specific position of effective Fermi level relatively acceptor and donor radiation-induced interface traps.
Только метаданные
Application of MISFETs for Irradiation Dose Rate Measurement
(2021) Podlepetsky, B.; Pershenkov, V.; Bakerenkov, A.; Felitsyn, V.; Подлепецкий, Борис Иванович; Бакеренков, Александр Сергеевич
© 2021 IEEE.We investigated the possibilities of using field-effect transistors to measure the dose rate of ionizing radiation using the example of an n-channel MOSFET. There were measured the gate voltage of transistors as function of ionizing dose at const values of the drain current and the drain-source voltage for different dose rates, as well as the current-voltage characteristics before and after irradiations. On the basis of the proposed models, the sensitivity, errors, and range of radiation dose rate measurement are estimated.