2020, Pershenkov, V. S., Zhukov, A. S., Belyakov, V. V., Bakerenkov, A. S., Telets, V. A., Felitsyn, V. A., Rodin, A. S., Беляков, Владимир Васильевич, Бакеренков, Александр Сергеевич, Телец, Виталий Арсеньевич, Родин, Александр Сергеевич

The possible physical mechanism of true dose rate effect is described using ELDRS conversional model. The effect of the oxide trapped charge on the value of the oxide electric field is taken into account. © 2020 IEEE.

2020, Bakerenkov, A. S., Pershenkov, V. S., Felitsyn, V. A., Rodin, A. S., Telets, V. A., Belyakov, V. V., Zhukov, A. I., Glukhov, N. S., Бакеренков, Александр Сергеевич, Родин, Александр Сергеевич, Телец, Виталий Арсеньевич, Беляков, Владимир Васильевич, Жуков, Александр Иванович

© 2020 IEEE.The performance of the total ionizing dose sensor based on a bipolar transistor were researched in this work.

2021, Bakerenkov, A. S., Rodin, A. S., Felitsyn, V. A., Pershenkov, V. S., Zhukov, A. I., Бакеренков, Александр Сергеевич, Родин, Александр Сергеевич, Жуков, Александр Иванович

© 2021 IEEE.Dependences of LM 111 voltage comparator input current on time during post-radiation annealing are investigated. The technique based on the Gummel- Poon model of a bipolar transistor for numerical simulation of the annealing process, taking into account the temperature drift of the radiation-sensitive parameter is presented.

2021, Podlepetsky, B., Pershenkov, V., Bakerenkov, A., Felitsyn, V., Подлепецкий, Борис Иванович, Бакеренков, Александр Сергеевич

© 2021 IEEE.We investigated the possibilities of using field-effect transistors to measure the dose rate of ionizing radiation using the example of an n-channel MOSFET. There were measured the gate voltage of transistors as function of ionizing dose at const values of the drain current and the drain-source voltage for different dose rates, as well as the current-voltage characteristics before and after irradiations. On the basis of the proposed models, the sensitivity, errors, and range of radiation dose rate measurement are estimated.

2019, Bakerenkov, A. S., Felitsyn, V. A., Rodin, A. S., Bursian, Y. D., Бакеренков, Александр Сергеевич, Родин, Александр Сергеевич

© Published under licence by IOP Publishing Ltd. The results of measurements of current-voltage characteristics of SiGe transistors for different temperatures are presented. The extraction results of parameters of test structures of the silicon-germanium SiGe bipolar transistors are presented.

2019, Bakerenkov, A. S., Pershenkov, V. S., Felitsyn, V. A., Rodin, A. S., Telets, V. A., Belyakov, V. V., Zhukov, A. I., Glukhov, N. S., Бакеренков, Александр Сергеевич, Родин, Александр Сергеевич, Телец, Виталий Арсеньевич, Беляков, Владимир Васильевич, Жуков, Александр Иванович

© 2019 IEEE.The impact of radiation degradation on the temperature dependence of electrical parameters of bipolar operational amplifiers is presented. Results of the researches can improve our understanding of physical and circuit radiation effects in bipolar operational amplifiers.

2019, Pershenkov, V., Bakerenkov, A., Rodin, A., Felitsyn, V., Telets, V., Belyakov, V., Бакеренков, Александр Сергеевич, Родин, Александр Сергеевич, Телец, Виталий Арсеньевич, Беляков, Владимир Васильевич

© 2019 IEEE.Possible physical mechanism of reduced low dose rate sensitivity in bipolar devices is described. The reduced sensitivity can be connected with a specific position of effective Fermi level relatively acceptor and donor radiation-induced interface traps.

2021, Pershenkov, V. S., Felitsyn, V. A., Bakerenkov, A. S., Rodin, A. S., Telets, V. A., Belyakov, V. V., Kovsharov, I. D., Zhukov, A. I., Бакеренков, Александр Сергеевич, Родин, Александр Сергеевич, Телец, Виталий Арсеньевич, Беляков, Владимир Васильевич, Ковшаров, Илья Дмитриевич, Жуков, Александр Иванович

© 2021 IEEE.A possible influence of location of the effective Fermi level in the forbidden gap of the surface base region on dose rate sensitivity of bipolar integrated circuits was described. Also, it is shown, that the position of the effective Fermi level leads to different behavior of bipolar devices during post-irradiation annealing at enhanced temperature. Experimental tests on dose rate sensitive devices were provided and discussed.

2019, Bakerenkov, A. S., Felitsyn, V. A., Rodin, A. S., Bursian, Y. D., Pershenkov, V. S., Бакеренков, Александр Сергеевич, Родин, Александр Сергеевич

© Published under licence by IOP Publishing Ltd. Radiation degradation rate of base current in SiGe HBTs was experimentally investigated using X-ray irradiation source with Cu anode at room and low temperatures. The dependences of base and collector current on the emitter-base voltage of the transistors were measured during radiation impact and presented for different total dose levels and irradiation conditions.

2020, Pershenkov, V. S., Bakerenkov, A. S., Rodin, A. S., Felitsyn, V. A., Zhukov, A. I., Telets, V. A., Belyakov, V. V., Бакеренков, Александр Сергеевич, Родин, Александр Сергеевич, Жуков, Александр Иванович, Телец, Виталий Арсеньевич, Беляков, Владимир Васильевич

Possible physical mechanism of enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate sensitivity (RLDRS) in bipolar devices is described. Modification of the low dose rate conversion model is presented. The enhanced or reduced sensitivity can be connected with a specific position of the effective Fermi level relatively acceptor and donor radiation-induced interface traps. The qualitative and quantitative analysis of the low dose rate effects is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge were taken into account. It leads to dependence of the accumulation of radiation-induced oxide charge and interface traps on the dose rate. In enhancement version the ELDRS and RLDRS conversion model describes the low dose rate effect in as "true" dose rate effect.