Publication: Application of MISFETs for Irradiation Dose Rate Measurement
Дата
2021
Авторы
Podlepetsky, B.
Pershenkov, V.
Bakerenkov, A.
Felitsyn, V.
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Аннотация
© 2021 IEEE.We investigated the possibilities of using field-effect transistors to measure the dose rate of ionizing radiation using the example of an n-channel MOSFET. There were measured the gate voltage of transistors as function of ionizing dose at const values of the drain current and the drain-source voltage for different dose rates, as well as the current-voltage characteristics before and after irradiations. On the basis of the proposed models, the sensitivity, errors, and range of radiation dose rate measurement are estimated.
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Application of MISFETs for Irradiation Dose Rate Measurement / Podlepetsky, B. [et al.] // Proceedings of the International Conference on Microelectronics, ICM. - 2021. - 2021-September. - P. 351-355. - 10.1109/MIEL52794.2021.9569092