Персона: Подлепецкий, Борис Иванович
Загружается...
Email Address
Birth Date
Научные группы
Организационные подразделения
Организационная единица
Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
Статус
Фамилия
Подлепецкий
Имя
Борис Иванович
Имя
20 results
Результаты поиска
Теперь показываю 1 - 10 из 20
- ПубликацияОткрытый доступPerformance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta 2 O 5 -SiO 2 -Si Structure During Long-Term Operation(2019) Kovalenko, A.; Podlepetsky, B.; Samotaev, N.; Nikiforova, M.; Подлепецкий, Борис Иванович; Самотаев, Николай НиколаевичWe present the generalized experimental results of performance degradation of hydrogen sensors based on metal-insulator-semiconductor field effect transistor (MISFET)with the structure Pd-Ta2O5-SiO2-Si. The n-channel MISFET elements were fabricated on silicon single chips together with temperature sensors and heater-resistors by means of conventional -technology. Two hundred cycles of responses to different hydrogen concentrations were measured during eight weeks using special measuring and temperature stabilization circuitries with a feedback loop based on the chip's thermo-sensor and heater. We show how the response parameters change during long-term tests of sensors under repeated hydrogen impacts. There were two stages of time-dependent response instability, the degradation of which depends on operating conditions, hydrogen concentrations, and time. To interpret results, we proposed the models, parameters of which were calculated using experimental data. These models can be used to predict performances of MISFET-based gas analysis devices for long-term operation.
- ПубликацияОткрытый доступThermal Conductivity Gas Sensors for High-Temperature Applications(2024) Samotaev, N.; Podlepetsky, B.; Mashinin, M.; Ivanov, I.; Obraztsov, I.; Oblov, K.; Dzhumaev, P.; Самотаев, Николай Николаевич; Подлепецкий, Борис Иванович; Машинин, Михаил Олегович; Иванов, Игорь Александрович; Образцов, Иван Сергеевич; Облов, Константин Юрьевич; Джумаев, Павел СергеевичThis paper describes a fast and flexible microfabrication method for thermal conductivity gas sensors useful in high-temperature applications. The key parts of the sensor, the microheater and the package, were fabricated from glass-coated platinum wire and the combination of laser micromilling (ablation) of already-sintered monolithic ceramic materials and thick-film screen-printing technologies. The final thermal conductivity gas sensor was fabricated in the form of a complete MEMS device in a metal ceramic package, which could be used as a compact miniaturized surface-mounted device for soldering to standard PCB. Functional test results of the manufactured sensor are presented, demonstrating their full suitability for gas sensing applications and indicating that the obtained parameters are at a level comparable to those of standard industrially produced sensors. The results of the design and optimization principles of applied methods are discussed with regard to possible wider applications in thermal gas sensor prototyping in the future. The advantage of the developed sensors is their ability to operate in air environments under high temperatures of 900 ‚шC and above. The sensor element material and package metallization were insensitive to oxidation compared with classical sensor-solution-based metalў??glass packages and silicone MEMS membranes, which exhibit mechanical stress at temperatures above 700 ‚шC.
- ПубликацияТолько метаданныеMeasurement Circuits' Characteristics of MISFET-based Sensors(2021) Podlepetsky, B.; Kovalenko, A.; Samotaev, N.; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич© 2021 IEEE.We have studied possible variants of the embedding MISFETs' sensing elements in measuring circuits of sensors. The electro-physical models for calculating the characteristics of circuits were proposed and used to estimate its performances.
- ПубликацияТолько метаданныеTechnology of SMD MOX gas sensors rapid prototyping(2020) Samotaev, N.; Oblov, K.; Veselov, D.; Podlepetsky, B.; Etrekova, M.; Volkov, N.; Zibilyuk, N.; Самотаев, Николай Николаевич; Облов, Константин Юрьевич; Веселов, Денис Сергеевич; Подлепецкий, Борис Иванович; Этрекова, Майя Оразгельдыевна© 2020 Trans Tech Publications Ltd, Switzerland.This work discusses the design of flexible laser micromilling technology for fast prototyping of metal oxide based (MOX) gas sensors in SMD packages as an alternative to traditional silicon clean room technologies. By laser micromilling technology it is possible to fabricate custom Micro Electro Mechanical System (MEMS) microhotplate platform and also packages for MOX sensor, that gives complete solution for its integration in devices using IoT conception. The tests described in the work show the attainability of the stated results for the fabrication of microhotplates.
- ПубликацияТолько метаданныеIonizing radiation dose sensor based on n-channel MOSFET(2020) Podlepetsky, B.; Pershenkov, V. S.; Belyakov, V. V.; Bakerenkov, A. S.; Felitsyn, V. A.; Rodin, A. S.; Подлепецкий, Борис Иванович; Беляков, Владимир Васильевич; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич© Springer Nature Switzerland AG 2020.We investigated the radiation sensitivity of dose-metrical sensors based on n-channel MOSFETs taking into account the effects of temperature and electrical modes. There were measured the output voltages V being equal to the gate voltage VG of MOSFET-based dosimeter as function of the radiation doses at const values of the drain current ID and the drain—source voltage VD (conversion functions), as well as the (ID − VG) characteristics before, during and after irradiations at different temperatures. It was shown how the conversion functions and the radiation sensitivities are depending on the temperature and electrical modes. It is found that the conversion functions V(D) have two characteristic regions for low and high doses (with negative and with positive radiation sensitivities). To interpret experimental data there were proposed the models of conversion function and its components taking into account the separate contributions of charges in the dielectric and in SiO2–Si interface.
- ПубликацияТолько метаданныеErrors of integrated hydrogen sensors based on FETs with structure Pd (Ag)-Ta2O5-SiO2-Si(2020) Kovalenko, A.; Podlepetsky, B.; Подлепецкий, Борис Иванович© 2021 The Author(s).The object of the study was an integrated sensor's cell consisting of n-channel FET-sensor element based on Pd(Ag)-Ta2O5-SiO2-Si structure, fabricated on Si-chip together with heater-resistor and temperature sensor by means of conventional n-MOS-technology using laser evaporation Pd(Ag)-films. Estimation of hydrogen concentration measurement's errors by FET-sensors has been done, using the models based on the experimental data. Proposed models of absolute and relative errors include components that take into account the instrumental errors of measurement units; the random errors associated with dispersions of sensors' output voltages; fluctuations of chip temperature and electrical circuits' parameters; additional errors due to the influence of other gases and radiation. It is shown how the errors depend on sensor sensitivity, hydrogen concentrations and total hydrogen dose. Examples of how to estimate the threshold of sensitivity and the operating range of concentration measurements for a given relative error are presented.
- ПубликацияТолько метаданныеEstimation of errors of RADFET-based dosimeters(2020) Podlepetsky, B. I.; Pershenkov, V. S.; Bakerenkov, A. S.; Felitsyn, V. A.; Подлепецкий, Борис Иванович; Бакеренков, Александр СергеевичWe have estimated various types of errors dosimeters based on n-channel field-effect transistors with a metal-insulator-semiconductor structure (called as RADFETs). The radiation sensitivity have been experimentally investigated. There were measured the gate voltage of RADFET -based dosimeter as function of total ionizing dose (TID) at constant values of the drain current and the drain - source voltage, as well as the current -voltage characteristics before and after irradiations at different TID. We showed how radiation sensitivity and errors of sensors are depending on TID and electrical modes. Electro-physical models were proposed to interpret obtained results. © 2020 IEEE.
- ПубликацияТолько метаданныеAccuracy Errors of Modeling of MIS-Transistor Sensor Elements(2020) Podlepetsky, B. I.; Подлепецкий, Борис Иванович© 2020, Pleiades Publishing, Inc.Assesses the accuracy characteristics of circuits’, electrical and electrophysical models of MISFET transistor elements of the sensors, taking into account the errors arising from simplifying assumptions, approximations, extrapolations and experimental dispersions’ characteristics in determining the parameters of the models and measured physical quantity.
- ПубликацияТолько метаданныеEvaluation of commercial PIN diodes as gamma radiation dosimeters(2019) Nikiforova, M. Y.; Podlepetsky, B. I.; Подлепецкий, Борис Иванович© 2019 Published under licence by IOP Publishing Ltd. The influence of gamma radiation on the current-voltage characteristics of silicon PIN photodiodes S1223 from Hammamatsu was investigated for their use as gamma radiation dose rate sensitive elements. The transfer characteristic and the dependence of the current sensitivity on the absorbed dose rate in the range from 6.7 Gy(Si)/h to 124 Gy(Si)/h were studied. The range of reverse voltages corresponding to the highest current sensitivity of PIN diodes is determined. An analytical expression of the transfer characteristic for the operating mode with maximum sensitivity to gamma radiation is obtained.
- ПубликацияТолько метаданныеEstimation of Errors of Integrated Hydrogen Sensors based on MISFET with structure Pd-Ta2O5-SiO2-Si(2019) Kovalenko, A.; Podlepetsky, B.; Подлепецкий, Борис Иванович© 2019 IEEE.We have estimated various types of errors of integrated hydrogen sensors based on MISFETs with structure Pd-Ta2O5-SiO2-Si on the basis of experimental studies of the multiple sensors' hydrogen responses, taking into account operating modes. The generalized model for the calculation of these errors was proposed.