Персона: Подлепецкий, Борис Иванович
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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Борис Иванович
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20 results
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- ПубликацияТолько метаданныеIonizing radiation dose sensor based on n-channel MOSFET(2020) Podlepetsky, B.; Pershenkov, V. S.; Belyakov, V. V.; Bakerenkov, A. S.; Felitsyn, V. A.; Rodin, A. S.; Подлепецкий, Борис Иванович; Беляков, Владимир Васильевич; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич© Springer Nature Switzerland AG 2020.We investigated the radiation sensitivity of dose-metrical sensors based on n-channel MOSFETs taking into account the effects of temperature and electrical modes. There were measured the output voltages V being equal to the gate voltage VG of MOSFET-based dosimeter as function of the radiation doses at const values of the drain current ID and the drain—source voltage VD (conversion functions), as well as the (ID − VG) characteristics before, during and after irradiations at different temperatures. It was shown how the conversion functions and the radiation sensitivities are depending on the temperature and electrical modes. It is found that the conversion functions V(D) have two characteristic regions for low and high doses (with negative and with positive radiation sensitivities). To interpret experimental data there were proposed the models of conversion function and its components taking into account the separate contributions of charges in the dielectric and in SiO2–Si interface.
- ПубликацияТолько метаданныеErrors of integrated hydrogen sensors based on FETs with structure Pd (Ag)-Ta2O5-SiO2-Si(2020) Kovalenko, A.; Podlepetsky, B.; Подлепецкий, Борис Иванович© 2021 The Author(s).The object of the study was an integrated sensor's cell consisting of n-channel FET-sensor element based on Pd(Ag)-Ta2O5-SiO2-Si structure, fabricated on Si-chip together with heater-resistor and temperature sensor by means of conventional n-MOS-technology using laser evaporation Pd(Ag)-films. Estimation of hydrogen concentration measurement's errors by FET-sensors has been done, using the models based on the experimental data. Proposed models of absolute and relative errors include components that take into account the instrumental errors of measurement units; the random errors associated with dispersions of sensors' output voltages; fluctuations of chip temperature and electrical circuits' parameters; additional errors due to the influence of other gases and radiation. It is shown how the errors depend on sensor sensitivity, hydrogen concentrations and total hydrogen dose. Examples of how to estimate the threshold of sensitivity and the operating range of concentration measurements for a given relative error are presented.
- ПубликацияТолько метаданныеEstimation of errors of RADFET-based dosimeters(2020) Podlepetsky, B. I.; Pershenkov, V. S.; Bakerenkov, A. S.; Felitsyn, V. A.; Подлепецкий, Борис Иванович; Бакеренков, Александр СергеевичWe have estimated various types of errors dosimeters based on n-channel field-effect transistors with a metal-insulator-semiconductor structure (called as RADFETs). The radiation sensitivity have been experimentally investigated. There were measured the gate voltage of RADFET -based dosimeter as function of total ionizing dose (TID) at constant values of the drain current and the drain - source voltage, as well as the current -voltage characteristics before and after irradiations at different TID. We showed how radiation sensitivity and errors of sensors are depending on TID and electrical modes. Electro-physical models were proposed to interpret obtained results. © 2020 IEEE.
- ПубликацияТолько метаданныеAccuracy Errors of Modeling of MIS-Transistor Sensor Elements(2020) Podlepetsky, B. I.; Подлепецкий, Борис Иванович© 2020, Pleiades Publishing, Inc.Assesses the accuracy characteristics of circuits’, electrical and electrophysical models of MISFET transistor elements of the sensors, taking into account the errors arising from simplifying assumptions, approximations, extrapolations and experimental dispersions’ characteristics in determining the parameters of the models and measured physical quantity.
- ПубликацияТолько метаданныеEvaluation of commercial PIN diodes as gamma radiation dosimeters(2019) Nikiforova, M. Y.; Podlepetsky, B. I.; Подлепецкий, Борис Иванович© 2019 Published under licence by IOP Publishing Ltd. The influence of gamma radiation on the current-voltage characteristics of silicon PIN photodiodes S1223 from Hammamatsu was investigated for their use as gamma radiation dose rate sensitive elements. The transfer characteristic and the dependence of the current sensitivity on the absorbed dose rate in the range from 6.7 Gy(Si)/h to 124 Gy(Si)/h were studied. The range of reverse voltages corresponding to the highest current sensitivity of PIN diodes is determined. An analytical expression of the transfer characteristic for the operating mode with maximum sensitivity to gamma radiation is obtained.
- ПубликацияТолько метаданныеEstimation of Errors of Integrated Hydrogen Sensors based on MISFET with structure Pd-Ta2O5-SiO2-Si(2019) Kovalenko, A.; Podlepetsky, B.; Подлепецкий, Борис Иванович© 2019 IEEE.We have estimated various types of errors of integrated hydrogen sensors based on MISFETs with structure Pd-Ta2O5-SiO2-Si on the basis of experimental studies of the multiple sensors' hydrogen responses, taking into account operating modes. The generalized model for the calculation of these errors was proposed.
- ПубликацияТолько метаданныеRapid prototyping of mox gas sensors in form-factor of smd packages(2019) Samotaev, N.; Oblov, K.; Ivanova, A.; Gorshkova, A.; Podlepetsky, B.; Самотаев, Николай Николаевич; Облов, Константин Юрьевич; Иванова, Анастасия Владимировна; Подлепецкий, Борис Иванович© 2019 IEEE.this work discusses the design of flexible laser micromilling technology for fast prototyping metal oxide based (MOX) gas sensors in SMD packages as a alternative to traditional silicon clean-room technologies. By laser micromilling technology possible to fabricate custom Micro Electro Mechanical System (MEMS) microhotplate platform and also SMD packages for MOX sensor, that gives complete solution for integration one in devices using IoT conception.
- ПубликацияТолько метаданныеModeling errors of the misfet-based sensors' characteristics(2019) Podlepetsky, B.; Samotaev, N.; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич© 2019 IEEE.The accuracy of circuits', electrical and electrophysical models of MIS transistor sensors' elements, taking into account the errors of simplifying assumptions, approximations, extrapolations and experimental dispersions' characteristics in determining the parameters of the models and measured physical quantity is estimated.
- ПубликацияТолько метаданныеApplication of MISFETs for Irradiation Dose Rate Measurement(2021) Podlepetsky, B.; Pershenkov, V.; Bakerenkov, A.; Felitsyn, V.; Подлепецкий, Борис Иванович; Бакеренков, Александр Сергеевич© 2021 IEEE.We investigated the possibilities of using field-effect transistors to measure the dose rate of ionizing radiation using the example of an n-channel MOSFET. There were measured the gate voltage of transistors as function of ionizing dose at const values of the drain current and the drain-source voltage for different dose rates, as well as the current-voltage characteristics before and after irradiations. On the basis of the proposed models, the sensitivity, errors, and range of radiation dose rate measurement are estimated.
- ПубликацияТолько метаданныеInfluence of temperature and electrical modes on radiation sensitivity and errors of RADFETs(2019) Podlepetsky, B. I.; Pershenkov, V. S.; Bakerenkov, A. S.; Felitsyn, V. A.; Rodin, A. S.; Подлепецкий, Борис Иванович; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич© 2019 IEEE.Influence of temperature and electrical modes on sensitivity and errors of ionizing radiation dose senor based on n- MOSFET (called as RADFET) have been investigated. There were measured the circuit's output voltages being equal to the gate voltage of RADFET-based dosimeter as function of the radiation doses at const values of the drain current and the drain - source voltage (conversion functions), as well as the current - voltage characteristics before, during and after irradiations at different temperatures. We showed how conversion functions, radiation sensitivities and errors are depending on the temperature and electrical modes. It is found that the conversion functions) have two characteristic regions for low and high doses (with negative and with positive radiation sensitivities). To interpret experimental data there were proposed the models of conversion function, its components and errors taking into account the separate contributions of charges in the dielectric and in SiO2-Si interface. Proposed models interpreting the experimental data can be used to predict performances of RADFET-based dosimeters.