Персона:
Подлепецкий, Борис Иванович

Организационные подразделения

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Институт нанотехнологий в электронике, спинтронике и фотонике

Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.

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Подлепецкий

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Борис Иванович

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Теперь показываю 1 - 10 из 22

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Structure and Technological Parameters’ Effect on MISFET-Based Hydrogen Sensors’ Characteristics
(2023) Podlepetsky, B.; Samotaev, N.; Etrekova, M.; Litvinov, A.; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич; Этрекова, Майя Оразгельдыевна; Литвинов, Артур Васильевич
The influence of structure and technological parameters (STPs) on the metrological characteristics of hydrogen sensors based on MISFETs has been investigated. Compact electrophysical and electrical models connecting the drain current, the voltage between the drain and the source and the voltage between the gate and the substrate with the technological parameters of the n-channel MISFET as a sensitive element of the hydrogen sensor are proposed in a general form. Unlike the majority of works, in which the hydrogen sensitivity of only the threshold voltage of the MISFET is investigated, the proposed models allow us to simulate the hydrogen sensitivity of gate voltages or drain currents in weak and strong inversion modes, taking into account changes in the MIS structure charges. A quantitative assessment of the effect of STPs on MISFET performances (conversion function, hydrogen sensitivity, gas concentration measurement errors, sensitivity threshold and operating range) is given for a MISFET with a Pd-Ta2O5-SiO2-Si structure. In the calculations, the parameters of the models obtained on the basis of the previous experimental results were used. It was shown how STPs and their technological variations, taking into account the electrical parameters, can affect the characteristics of MISFET-based hydrogen sensors. It is noted, in particular, that for MISFET with submicron two-layer gate insulators, the key influencing parameters are their type and thickness. Proposed approaches and compact refined models can be used to predict performances of MISFET-based gas analysis devices and micro-systems.
Открытый доступ
Performance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta 2 O 5 -SiO 2 -Si Structure During Long-Term Operation
(2019) Kovalenko, A.; Podlepetsky, B.; Samotaev, N.; Nikiforova, M.; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич
We present the generalized experimental results of performance degradation of hydrogen sensors based on metal-insulator-semiconductor field effect transistor (MISFET)with the structure Pd-Ta2O5-SiO2-Si. The n-channel MISFET elements were fabricated on silicon single chips together with temperature sensors and heater-resistors by means of conventional -technology. Two hundred cycles of responses to different hydrogen concentrations were measured during eight weeks using special measuring and temperature stabilization circuitries with a feedback loop based on the chip's thermo-sensor and heater. We show how the response parameters change during long-term tests of sensors under repeated hydrogen impacts. There were two stages of time-dependent response instability, the degradation of which depends on operating conditions, hydrogen concentrations, and time. To interpret results, we proposed the models, parameters of which were calculated using experimental data. These models can be used to predict performances of MISFET-based gas analysis devices for long-term operation.
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MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors
(2023) Litvinov, A.; Etrekova, M.; Podlepetsky, B.; Samotaev, N.; Oblov, K.; Литвинов, Артур Васильевич; Этрекова, Майя Оразгельдыевна; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич; Облов, Константин Юрьевич
The features of the wide band gap SiC semiconductor use in the capacitive MOSFE sensors structure in terms of the hydrogen gas sensitivity effect, the response speed, and the measuring signals optimal parameters are studied. Sensors in a high-temperature ceramic housing with the Me/Ta2O5/SiCn+/4H-SiC structures and two types of gas-sensitive electrodes were made: Palladium and Platinum. The effectiveness of using Platinum as an alternative to Palladium in the MOSFE-Capacitor (MOSFEC) gas sensors high-temperature design is evaluated. It is shown that, compared with Silicon, the use of Silicon Carbide increases the response rate, while maintaining the sensors high hydrogen sensitivity. The operating temperature and test signal frequency influence for measuring the sensor s capacitance on the sensitivity to H2 have been studied.
Только метаданные
Errors of integrated hydrogen sensors based on FETs with structure Pd (Ag)-Ta2O5-SiO2-Si
(2020) Kovalenko, A.; Podlepetsky, B.; Подлепецкий, Борис Иванович
© 2021 The Author(s).The object of the study was an integrated sensor's cell consisting of n-channel FET-sensor element based on Pd(Ag)-Ta2O5-SiO2-Si structure, fabricated on Si-chip together with heater-resistor and temperature sensor by means of conventional n-MOS-technology using laser evaporation Pd(Ag)-films. Estimation of hydrogen concentration measurement's errors by FET-sensors has been done, using the models based on the experimental data. Proposed models of absolute and relative errors include components that take into account the instrumental errors of measurement units; the random errors associated with dispersions of sensors' output voltages; fluctuations of chip temperature and electrical circuits' parameters; additional errors due to the influence of other gases and radiation. It is shown how the errors depend on sensor sensitivity, hydrogen concentrations and total hydrogen dose. Examples of how to estimate the threshold of sensitivity and the operating range of concentration measurements for a given relative error are presented.
Только метаданные
Technology of SMD MOX gas sensors rapid prototyping
(2020) Samotaev, N.; Oblov, K.; Veselov, D.; Podlepetsky, B.; Etrekova, M.; Volkov, N.; Zibilyuk, N.; Самотаев, Николай Николаевич; Облов, Константин Юрьевич; Веселов, Денис Сергеевич; Подлепецкий, Борис Иванович; Этрекова, Майя Оразгельдыевна
© 2020 Trans Tech Publications Ltd, Switzerland.This work discusses the design of flexible laser micromilling technology for fast prototyping of metal oxide based (MOX) gas sensors in SMD packages as an alternative to traditional silicon clean room technologies. By laser micromilling technology it is possible to fabricate custom Micro Electro Mechanical System (MEMS) microhotplate platform and also packages for MOX sensor, that gives complete solution for its integration in devices using IoT conception. The tests described in the work show the attainability of the stated results for the fabrication of microhotplates.
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Micro-Hotplate for Thermocatalytic Gas Sensor Fabricated by Ceramic Laser Micromachining
(2026) Samotaev, N.; Zebrev, G.; Oblov, K.; Etrekova, M.; Dzhumaev, P.; Obraztsov, I.; Podlepetsky, B.; Самотаев, Николай Николаевич; Зебрев, Геннадий Иванович; Облов, Константин Юрьевич; Этрекова, Майя Оразгельдыевна; Джумаев, Павел Сергеевич; Образцов, Иван Сергеевич; Подлепецкий, Борис Иванович
Только метаданные
Accuracy Errors of Modeling of MIS-Transistor Sensor Elements
(2020) Podlepetsky, B. I.; Подлепецкий, Борис Иванович
© 2020, Pleiades Publishing, Inc.Assesses the accuracy characteristics of circuits’, electrical and electrophysical models of MISFET transistor elements of the sensors, taking into account the errors arising from simplifying assumptions, approximations, extrapolations and experimental dispersions’ characteristics in determining the parameters of the models and measured physical quantity.
Только метаданные
Application of MISFETs for Irradiation Dose Rate Measurement
(2021) Podlepetsky, B.; Pershenkov, V.; Bakerenkov, A.; Felitsyn, V.; Подлепецкий, Борис Иванович; Бакеренков, Александр Сергеевич
© 2021 IEEE.We investigated the possibilities of using field-effect transistors to measure the dose rate of ionizing radiation using the example of an n-channel MOSFET. There were measured the gate voltage of transistors as function of ionizing dose at const values of the drain current and the drain-source voltage for different dose rates, as well as the current-voltage characteristics before and after irradiations. On the basis of the proposed models, the sensitivity, errors, and range of radiation dose rate measurement are estimated.
Только метаданные
Modeling errors of the misfet-based sensors' characteristics
(2019) Podlepetsky, B.; Samotaev, N.; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич
© 2019 IEEE.The accuracy of circuits', electrical and electrophysical models of MIS transistor sensors' elements, taking into account the errors of simplifying assumptions, approximations, extrapolations and experimental dispersions' characteristics in determining the parameters of the models and measured physical quantity is estimated.
Только метаданные
Estimation of Errors of Integrated Hydrogen Sensors based on MISFET with structure Pd-Ta2O5-SiO2-Si
(2019) Kovalenko, A.; Podlepetsky, B.; Подлепецкий, Борис Иванович
© 2019 IEEE.We have estimated various types of errors of integrated hydrogen sensors based on MISFETs with structure Pd-Ta2O5-SiO2-Si on the basis of experimental studies of the multiple sensors' hydrogen responses, taking into account operating modes. The generalized model for the calculation of these errors was proposed.