Publication:
Application of MISFETs for Irradiation Dose Rate Measurement

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dc.contributor.authorPodlepetsky, B.
dc.contributor.authorPershenkov, V.
dc.contributor.authorBakerenkov, A.
dc.contributor.authorFelitsyn, V.
dc.contributor.authorПодлепецкий, Борис Иванович
dc.contributor.authorБакеренков, Александр Сергеевич
dc.date.accessioned2024-11-29T22:35:17Z
dc.date.available2024-11-29T22:35:17Z
dc.date.issued2021
dc.description.abstract© 2021 IEEE.We investigated the possibilities of using field-effect transistors to measure the dose rate of ionizing radiation using the example of an n-channel MOSFET. There were measured the gate voltage of transistors as function of ionizing dose at const values of the drain current and the drain-source voltage for different dose rates, as well as the current-voltage characteristics before and after irradiations. On the basis of the proposed models, the sensitivity, errors, and range of radiation dose rate measurement are estimated.
dc.format.extentС. 351-355
dc.identifier.citationApplication of MISFETs for Irradiation Dose Rate Measurement / Podlepetsky, B. [et al.] // Proceedings of the International Conference on Microelectronics, ICM. - 2021. - 2021-September. - P. 351-355. - 10.1109/MIEL52794.2021.9569092
dc.identifier.doi10.1109/MIEL52794.2021.9569092
dc.identifier.urihttps://www.doi.org/10.1109/MIEL52794.2021.9569092
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85118440394&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/24914
dc.relation.ispartofProceedings of the International Conference on Microelectronics, ICM
dc.titleApplication of MISFETs for Irradiation Dose Rate Measurement
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.volume2021-September
relation.isAuthorOfPublication11795ead-c59a-47cf-bae1-ccbff5788e69
relation.isAuthorOfPublication94c8e0af-bcfa-4504-b666-96bdb9ac29c0
relation.isAuthorOfPublication.latestForDiscovery11795ead-c59a-47cf-bae1-ccbff5788e69
relation.isOrgUnitOfPublication06e1796d-4f55-4057-8d7e-bb2f3b5676f5
relation.isOrgUnitOfPublication.latestForDiscovery06e1796d-4f55-4057-8d7e-bb2f3b5676f5
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