2020, Shvetsov-Shilovskiy, I. I., Chumakov, A. I., Pechenkin, A. A., Bobrovsky, D. V., Швецов-Шиловский, Иван Иванович, Чумаков, Александр Иннокентьевич, Печенкин, Александр Александрович, Бобровский, Дмитрий Владимирович

This article concerns experimental and simulation results on nonstable latchups (SLs) in CMOS integrated circuits (ICs) under pulsed laser irradiation. Different transient responses in elements of the p-n-p-n structure and irregular ionization distribution on the IC surface are the main reasons for non-SLs. Radiation experimental test results are presented as well as a discussion of non-SL mechanisms.

2021, Shvetsov-Shilovskiy, I. I., Chumakov, A. I., Pechenkin, A. A., Bobrovsky, D. V., Швецов-Шиловский, Иван Иванович, Чумаков, Александр Иннокентьевич, Печенкин, Александр Александрович, Бобровский, Дмитрий Владимирович

© 2021 IEEE.The paper concerns experimental results on external conditions such as temperature, voltage supply, current limit, and features of the power circuit on latchup occurrence under uniform laser irradiation.

2023, Filatov, G. A., Slivin, A. A., Syresin, E. M., Butenko, A. V., Bobrovskiy, D. V., Chumakov, A. I., Soloviev, S. A., Бобровский, Дмитрий Владимирович, Чумаков, Александр Иннокентьевич, Соловьев, Сергей Александрович

2011, Бобровский, Д. В., Бобровский, Дмитрий Владимирович, Калашников, О. А.

2021, Loskutov, I. O., Kravchenko, N. D., Marfin, V. A., Nekrasov, P. V., Bobrovsky, D. V., Smolin, A. A., Yanenko, A. V., Лоскутов, Илья Олегович, Кравченко, Николай Дмитриевич, Некрасов, Павел Владимирович, Бобровский, Дмитрий Владимирович, Яненко, Андрей Викторович

© 2021 IEEE.the paper presents a broad investigation of single event effects in ARM microcontroller (MCU) under heavy ion irradiation. Experimental details are presented: device under the test and test setup. The stages of experiments are described: radiation testing using heavy ion accelerator, laser source irradiation and single event functional interrupts simulation campaign. The algorithm of operation of the program injector for conducting campaigns on simulating SEFI is presented. The influence of a real-time operating system on cross-section of SEFI was evaluated. SEFI cross-sections obtained with and without the operating system were compared. A method using fault injection in program and data memory and hardware detection of functional interrupts was tested. The results of SEFI simulation and calculation by engineering model were compared with experimental results. The results obtained differ from each other. Possible explanations of the proposed differences and the correction of the model are proposed. Directions for further research are outlined.

2019, Akhmetov, A. O., Sorokoumov, G. S., Smolin, A. A., Bobrovsky, D. V., Boychenko, D. V., Nikiforov, A. Y., Сорокоумов, Георгий Сергеевич, Бобровский, Дмитрий Владимирович, Бойченко, Дмитрий Владимирович, Никифоров, Александр Юрьевич

© 2019 IEEE.The paper presents single event upset (SEU) experimental results in Spartan-6 FPGA due to direct and indirect proton ionization. High energy proton beam and aluminum foils were used to decrease proton energy down to 1.. 20 MeV to observe proton direct ionization upsets.

2022, Kostyuchenko, D., Bobrovskiy, D., Pechenkin, A., Marfin, V., Tsirkov, A., Karakozov, A., Костюченко, Денис Сергеевич, Бобровский, Дмитрий Владимирович, Печенкин, Александр Александрович, Цирков, Артем Николаевич

© 2022 IEEE.It was required to develop a non-contact cooling system for conducting radiation research of VLSI with high heat generation. During the development process, various available methods for cooling products were considered and tested: immersion cooling and a cold-box - these methods did not bring the desired result.As a result, a cooling system was assembled based on the process of blowing the VLSI crystal with high-pressure compressed air. The system was based on an air compressor. The compressor was supplemented with external sensors to control the temperature of the samples and a control system for the output air flow. The entire process of setting the sample temperature was automatically controlled from a personal computer. The software and hardware parts of the solution are presented in this article.This non-contact cooling system has shown itself well in the conditions of real VLSI radiation research at physical facilities. However, in the future it is planned to improve a number of parameters in order to develop this cooling system to increase its efficiency.

2025, Бобровский, Д. В., Швецов-Шиловский, И. И., Соловьев, С. А., Чумаков, А. И., Сыресин, Е. М., Сливин, А. А., Филатов, Г. А., Соловьев, Сергей Александрович, Чумаков, Александр Иннокентьевич, Бобровский, Дмитрий Владимирович, Швецов-Шиловский, Иван Иванович

В работе проводится анализ возможной области применения стенда «СОЧИ» на базе линейного ускорителя тяжелых ионов (ЛУТИ) для целей контроля неизменности топологии кристалла в целях обеспечения доверенности ЭКБ. Одна из характеристик интегральной схемы (ИС), определяющаяся топологией и проектными нормами – чувствительность к воздействию тяжелых заряженных частиц (ТЗЧ) по тиристорному эффекту и сбоям. Показано, что даже незначительные и не всегда заметные изменения топологии интегральной схемы могут приводить к резким изменениям параметров чувствительности по тиристорным эффектам (ТЭ), тогда как по одиночным сбоям изменения имеют место при изменении проектных норм и библиотечных элементов. Импульсный характер пучка на стенде «СОЧИ» не позволяют проводить испытания только очень чувствительных ЭКБ к воздействию ТЗЧ по тиристорному эффекту в количественном выражении (определение сечения эффекта), однако даже в этом случае возможно определять пороговое значение линейных потерь энергии возникновения ТЭ. Во всех других случаях параметры чувствительности ИС по одиночным радиационным эффектам могут быть определены.

2019, Chumakov, A. I., Bobrovsky, D. V., Pechenkin, A. A., Savchenkov, D. V., Sorokoumov, G. S., Shvetsov-Shilovskiy, I. I., Чумаков, Александр Иннокентьевич, Бобровский, Дмитрий Владимирович, Печенкин, Александр Александрович, Сорокоумов, Георгий Сергеевич, Швецов-Шиловский, Иван Иванович

© 2019, Pleiades Publishing, Ltd.Abstract: The results of research on nonstationary latchup effects (LEs) under the influence of heavy charged particles and ionizing radiation pulses, which are spontaneously counteracted depending on the operating conditions, are presented. This behavior is caused by the effects of the rail span collapse inside the complementary metal-oxide-system (CMOS) of very large scale integrated (VLSI) circuits. The experimental studies are carried out on both the ion accelerator and the laser facilities.

2021, Slivin, A., Agapov, A., Baldin, A., Butenko, A., Bobrovskiy, D. V., Chumakov, A., Soloviev, S., Бобровский, Дмитрий Владимирович, Чумаков, Александр Иннокентьевич, Соловьев, Сергей Александрович

© 27th Russian Particle Accelerator Conference, RuPAC 2021. All rights reserved.Applied research at the NICA accelerator complex include the following areas that are under construction: single event effects testing on capsulated microchips (energy range of 150-500 MeV/n) at the Irradiation Setup for Components of Radioelectronic Apparature (ISCRA) and on decapsulated microchips (ion energy up to 3,2 MeV/n) at the Station of CHip Irradiation (SOCHI), space radiobiological research and modelling of influence of heavy charged particles on cognitive functions of the brain of small laboratory animals and primates (energy range 500-1000 MeV/n) at the Setup for Investigation of Medical Biological Objects (SIMBO). Description of main systems and beam parameters at the ISCRA, SOCHI and SIMBO applied research stations is presented. The new beam transfer lines from the Nuclotron to ISCRA and SIMBO stations, and from HILAC to SOCHI station are being constructed. Description of the transfer lines layout, the magnets and diagnostic detectors, results of the beam dynamics simulations are described given.