Publication: Nonstable Latchups in CMOS ICs Under Pulsed Laser Irradiation
Дата
2020
Авторы
Shvetsov-Shilovskiy, I. I.
Chumakov, A. I.
Pechenkin, A. A.
Bobrovsky, D. V.
Journal Title
Journal ISSN
Volume Title
Издатель
Аннотация
This article concerns experimental and simulation results on nonstable latchups (SLs) in CMOS integrated circuits (ICs) under pulsed laser irradiation. Different transient responses in elements of the p-n-p-n structure and irregular ionization distribution on the IC surface are the main reasons for non-SLs. Radiation experimental test results are presented as well as a discussion of non-SL mechanisms.
Описание
Ключевые слова
Цитирование
Nonstable Latchups in CMOS ICs Under Pulsed Laser Irradiation / Shvetsov-Shilovskiy, II [et al.] // IEEE Transactions on Nuclear Science. - 2020. - 67. - № 7. - P. 1540-1546. - 10.1109/TNS.2020.3001169
URI
https://www.doi.org/10.1109/TNS.2020.3001169
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https://openrepository.mephi.ru/handle/123456789/22106
https://www.scopus.com/record/display.uri?eid=2-s2.0-85088857545&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000550669800041
https://openrepository.mephi.ru/handle/123456789/22106