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Печенкин, Александр Александрович

Организационные подразделения

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Печенкин

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Александр Александрович

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Теперь показываю 1 - 10 из 26

Только метаданные
Radiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures
(2019) Ukolov, D. S.; Chirkov, N. A.; Mozhaev, R. K.; Pechenkin, A. A.; Можаев, Роман Константинович; Печенкин, Александр Александрович
© 2019 IEEE.The radiation hardness results of light emitting diodes (LED) in green, blue and red regions of the spectrum and in white, based on InGaN, GaN and AlInGaP structures are presented. The technical aspects of monitoring parameters during exposure are described, and LEDs response to various radiation exposures are given.
Только метаданные
An Automated System of Lowered Temperature Setting for Long-Term Radiation Experiments
(2021) Muzafarov, M. V.; Kolosova, A. S.; Pechenkin, A. A.; Davydov, G. G.; Gromova, P. S.; Boychenko, D. V.; Demidova, A. V.; Музафаров, Михаил Валентинович; Колосова, Анна Сергеевна; Печенкин, Александр Александрович; Давыдов, Георгий Георгиевич; Бойченко, Дмитрий Владимирович
© 2021 IEEE.A description of the system for setting a lowered environment temperature based on Peltier modules is presented. The development was carried out taking into account the peculiarities of the radiation test: minimum distance from exposure source to DUT; stand-alone use during long-term radiation test; minimum overall dimensions, transportability and flexibility when conducting tests on various exposure sources. Cooling box consists of 3-level stacked assembly of the Peltier modules, which is cooled by liquid refrigerant. Control of the assembly of Peltier modules was performed according to proportional integral and differential algorithm, provided by microcontroller with feedbacks on Pt thermoresistors. The system provides temperature stabilization of the DUT up to 23×17×12 mm in size and with released heat power up to 0.4 W at minus (60 ± 3) °C. Temperature establishing time is less than 10 minutes. Typical power consumption of developed system is about 500W.
Только метаданные
Application of two-photon absorption technique for single-event effects simulation in silicon microelectronic devices
(2022) Egorov, A. N.; Mavritskii, O. B.; Pechenkin, A. A.; Savchenkov, D. V.; Kholina, M. S.; Егоров, Андрей Николаевич; Маврицкий, Олег Борисович; Печенкин, Александр Александрович; Холина, Марта Сергеевна
© 2022 SPIE.The application of two-photon absorption (TPA) for local nonequilibrium charge generation in the semiconductor microelectronic structures improves the 3D-spatial resolution of optical testing techniques (such as OBIC and similar), as compared to those, based on single-photon absorption (SPA). In this paper we discuss the results of laser single-event effect (SEE) simulation in digital potentiometer AD8400, using the TPA of tightly focused femtosecond laser radiation. The experiments were performed at the setup, which includes the tunable optical parametric amplifier with output wavelength in 900…1200 nm region. The results were compared to those obtained by SPA technique on the same experimental setup.
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Nonstable Latchups in CMOS ICs Under Pulsed Laser Irradiation
(2020) Shvetsov-Shilovskiy, I. I.; Chumakov, A. I.; Pechenkin, A. A.; Bobrovsky, D. V.; Швецов-Шиловский, Иван Иванович; Чумаков, Александр Иннокентьевич; Печенкин, Александр Александрович; Бобровский, Дмитрий Владимирович
This article concerns experimental and simulation results on nonstable latchups (SLs) in CMOS integrated circuits (ICs) under pulsed laser irradiation. Different transient responses in elements of the p-n-p-n structure and irregular ionization distribution on the IC surface are the main reasons for non-SLs. Radiation experimental test results are presented as well as a discussion of non-SL mechanisms.
Только метаданные
Automation of Laser Single-Event Effect Testing of Integrated Circuits for Space Missions
(2021) Tsirkov, A. N.; Savchenkov, D. V.; Novikov, A. A.; Pechenkin, A. A.; Цирков, Артем Николаевич; Печенкин, Александр Александрович
© 2021 IEEE.a division of labor plays significant role in the efficiency of laser SEE Testing. The highest efficiency can be achieved when testers fulfill their roles in a global task: one is engaged in debugging and monitoring the testing progress at the facility, another one participates in the preparation and performance monitoring of the device under test (DUT). This article describes the architecture of our software for SEE testing that consists of two parts: the one responsible for the functional testing of the DUT and another one responsible for the SEE testing logic. Separating these two parts allows them to be developed independently by different specialists. The DUT part of software controls a wide variety of equipment including National Instruments PXI/PXIe modules which are commonly used for functional testing of the devices under test. The laser SEE testing part of software controls all parts of the laser facility (laser beam positioning and pulse synchronization, visualization of exposure area, etc.) and the acquisition of laser SEE testing data. One of the main points of this paper is the idea of communication between the apps on different platforms (Microsoft.NET and NI LabVIEW) over local area network.
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Лазерные методы оценки стойкости КМОП БИС к тиристорным эффектам при воздействии отдельных ядерных частиц
(НИЯУ МИФИ, 2012) Печенкин, А. А.; Печенкин, Александр Александрович; Чумаков, А. И.
Только метаданные
Laser scanning confocal IR microscopy for non-destructive testing of semiconductors
(2022) Ukolov, D.; Baluev, A.; Gromova, P.; Pechenkin, A.; Mozhaev, R.; Балуев, Арсений Андреевич; Печенкин, Александр Александрович; Можаев, Роман Константинович
© 2022 IEEE.The article discusses characteristics of the laser scanning confocal IR microscope being developed for applications of non-destructive testing of semiconductor structures. The existing methods and analysis facilities of integrated circuits are described. In this review, the method of laser confocal IR-microscopy is considered. The laser scanning confocal IR-microscope will make it possible to reconstruct the internal structure of an integrated circuit and identify its materials without special environmental conditions during research, for example, such as vacuum chamber or x-ray facility.
Только метаданные
Single-Mode W-Type Optical Fiber Stable Against Bending and Radiation
(2020) Eron'yan, M. A.; Kulesh, A. Y.; Reutskii, A. A.; Devet'yarov, D. R.; Pechenkin, A. A.; Печенкин, Александр Александрович
© 2020, Pleiades Publishing, Ltd.Abstract: It is shown that single-mode fluorosilicate optical fibers fabricated with the aid of modified chemical vapor deposition exhibit a significant decrease in the radiation resistance when 1 mol % GeO2 is introduced into the silica-glass core. Elimination of chlorine and OH group impurities in the silica glass of the core of the fluorosilicate single-mode fiber leads to a relatively low level of radiation-induced attenuation. Prior to radiation processing, the loss factors of optical fiber are 0.18 and 0.3 dB/km at wavelengths of 1.55 and 1.31 μm, respectively. The dependence of optical loss of such fibers on the bend diameter ranging from 6 to 12 mm is studied.
Только метаданные
The Effects of the External Conditions of CMOS IC Functioning on Latchup Occurrence under Uniform Laser Irradiation
(2021) Shvetsov-Shilovskiy, I. I.; Chumakov, A. I.; Pechenkin, A. A.; Bobrovsky, D. V.; Швецов-Шиловский, Иван Иванович; Чумаков, Александр Иннокентьевич; Печенкин, Александр Александрович; Бобровский, Дмитрий Владимирович
© 2021 IEEE.The paper concerns experimental results on external conditions such as temperature, voltage supply, current limit, and features of the power circuit on latchup occurrence under uniform laser irradiation.
Только метаданные
Application of Confocal Microscopy Methods for Research and Non-destructive Examination of Semiconductor Structures and Integrated Circuits
(2021) Baluev, A. A.; Ukolov, D. S.; Pechenkin, A. A.; Mozhaev, R. K.; Балуев, Арсений Андреевич; Печенкин, Александр Александрович; Можаев, Роман Константинович
© 2021 IEEE.The paper discusses the features and the possibilities of the under-development scanning confocal microscope in tasks of non-destructive examination of semiconductor electronics using the method of confocal microscopy with an emphasis on the possibility of studying the material and internal structure. The described technique allows studying integrated circuits from the substrate side of integrated circuits. This work is part of a global task and is devoted to mathematical modeling of the scanning process.