Publication: Radiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures
Дата
2019
Авторы
Ukolov, D. S.
Chirkov, N. A.
Mozhaev, R. K.
Pechenkin, A. A.
Journal Title
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Volume Title
Издатель
Аннотация
© 2019 IEEE.The radiation hardness results of light emitting diodes (LED) in green, blue and red regions of the spectrum and in white, based on InGaN, GaN and AlInGaP structures are presented. The technical aspects of monitoring parameters during exposure are described, and LEDs response to various radiation exposures are given.
Описание
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Цитирование
Radiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures / Ukolov, D.S. [et al.] // 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings. - 2019. - P. 197-200. - 10.1109/MIEL.2019.8889651
URI
https://www.doi.org/10.1109/MIEL.2019.8889651
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https://openrepository.mephi.ru/handle/123456789/18898
https://www.scopus.com/record/display.uri?eid=2-s2.0-85075401356&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000565455600042
https://openrepository.mephi.ru/handle/123456789/18898