Publication:
Radiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures

dc.contributor.authorUkolov, D. S.
dc.contributor.authorChirkov, N. A.
dc.contributor.authorMozhaev, R. K.
dc.contributor.authorPechenkin, A. A.
dc.contributor.authorМожаев, Роман Константинович
dc.contributor.authorПеченкин, Александр Александрович
dc.date.accessioned2024-11-21T14:51:45Z
dc.date.available2024-11-21T14:51:45Z
dc.date.issued2019
dc.description.abstract© 2019 IEEE.The radiation hardness results of light emitting diodes (LED) in green, blue and red regions of the spectrum and in white, based on InGaN, GaN and AlInGaP structures are presented. The technical aspects of monitoring parameters during exposure are described, and LEDs response to various radiation exposures are given.
dc.format.extentС. 197-200
dc.identifier.citationRadiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures / Ukolov, D.S. [et al.] // 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings. - 2019. - P. 197-200. - 10.1109/MIEL.2019.8889651
dc.identifier.doi10.1109/MIEL.2019.8889651
dc.identifier.urihttps://www.doi.org/10.1109/MIEL.2019.8889651
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85075401356&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000565455600042
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18898
dc.relation.ispartof2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
dc.titleRadiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures
dc.typeConference Paper
dspace.entity.typePublication
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