Publication: Radiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures
dc.contributor.author | Ukolov, D. S. | |
dc.contributor.author | Chirkov, N. A. | |
dc.contributor.author | Mozhaev, R. K. | |
dc.contributor.author | Pechenkin, A. A. | |
dc.contributor.author | Можаев, Роман Константинович | |
dc.contributor.author | Печенкин, Александр Александрович | |
dc.date.accessioned | 2024-11-21T14:51:45Z | |
dc.date.available | 2024-11-21T14:51:45Z | |
dc.date.issued | 2019 | |
dc.description.abstract | © 2019 IEEE.The radiation hardness results of light emitting diodes (LED) in green, blue and red regions of the spectrum and in white, based on InGaN, GaN and AlInGaP structures are presented. The technical aspects of monitoring parameters during exposure are described, and LEDs response to various radiation exposures are given. | |
dc.format.extent | С. 197-200 | |
dc.identifier.citation | Radiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures / Ukolov, D.S. [et al.] // 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings. - 2019. - P. 197-200. - 10.1109/MIEL.2019.8889651 | |
dc.identifier.doi | 10.1109/MIEL.2019.8889651 | |
dc.identifier.uri | https://www.doi.org/10.1109/MIEL.2019.8889651 | |
dc.identifier.uri | https://www.scopus.com/record/display.uri?eid=2-s2.0-85075401356&origin=resultslist | |
dc.identifier.uri | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000565455600042 | |
dc.identifier.uri | https://openrepository.mephi.ru/handle/123456789/18898 | |
dc.relation.ispartof | 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings | |
dc.title | Radiation Hardness Evaluation of LEDs Based on InGaN, GaN and AlInGaP Heterostructures | |
dc.type | Conference Paper | |
dspace.entity.type | Publication | |
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