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Зебрев, Геннадий Иванович

Организационные подразделения

Организационная единица

Институт нанотехнологий в электронике, спинтронике и фотонике

Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.

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Зебрев

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Геннадий Иванович

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Теперь показываю 1 - 10 из 10

Только метаданные
Simulation of annealing and the ELDRS in p-MNOS RadFETs
(2019) Maslovsky, V. M.; Mrozovskaya, E. V.; Zimin, P. A.; Chubunov, P. A.; Zebrev, G. I.; Мрозовская, Елизавета Владимировна; Чубунов, Павел Александрович; Зебрев, Геннадий Иванович
© 2019 by Begell House, Inc.The manifestation of simultaneous annealing in p-MNOS (metal–nitride–oxide‑semiconductor) samples with thick oxide and a pronounced effect of enhanced low-dose-rate sensitivity (ELDRS) are investigated. The simulation was based on experimental data.
Только метаданные
Gallium Nitride FET Model
(2019) Orlov, V. V.; Zebrev, G. I.; Зебрев, Геннадий Иванович
© Published under licence by IOP Publishing Ltd. We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the source-drain resistance, different interface trap densities and self-heating effects.
Только метаданные
Modelling of saturation current of an organic field-effect transistor with accounting for contact resistances
(2019) Turin, V. O.; Rakhmatov, B. A.; Kim, C. H.; Iniguez, B.; Zebrev, G. I.; Зебрев, Геннадий Иванович
© 2019 Published under licence by IOP Publishing Ltd. The saturation current of an organic field-effect transistor was calculated numerically by bisection method taking into account the source and drain resistances. Dependences of the saturation current as a function of the gate voltage, centred on the threshold voltage, and as a function of the "extrinsic" (taking into account the source and drain resistances) saturation voltage are presented. The calculations were carried out using an iterative scheme assuming the saturation current to be zero for iteration zero and using different numbers of iterations. In addition, we carried out a compact modelling of the saturation current in the framework of the approach we proposed earlier. It is shown that when in the equation for the compact modelling initial value of saturation current of zero value (corresponding to zero iteration) is used, a good agreement with the bisection method of over a wide range of gate voltages is obtained.
Только метаданные
Second International Telecommunication Conference on Advanced Micro- and Nanoelectronic Systems and Technologies
(2019) Pershenkov, V. S.; Veselov, D. S.; Zebrev, G. I.; Веселов, Денис Сергеевич; Зебрев, Геннадий Иванович
Только метаданные
Static and dynamic oxide-Trapped-charge-induced variability in nanoscale CMOS circuits
(2019) Zebrev, G.; Зебрев, Геннадий Иванович
© 1963-2012 IEEE. The interdevice mismatch and intradevice temporal instability in the nanoscale CMOS circuits is examined from a unified point of view as a static and dynamic parts of the variability concerned with stochastic oxide charge trapping and detrapping. This approach has been benchmarked on the recent evidence of the radiation-induced increase of intertransistor mismatch in 60-nm ICs. A possible reliability limitation in ultrascale circuits concerned with the single or a few charged defect instability is pointed out and estimated.
Только метаданные
A piecewise approximation for short-channel “extrinsic” MOSFET drain current dependence on drain-to-source bias including linear triode, linear saturation and asymptotic saturation regimes
(2019) Turin, V. O.; Shkarlat, R. S.; Rakhmatov, B. A.; Kim, C. -H.; Zebrev, G. I.; Зебрев, Геннадий Иванович
© The Electrochemical Society.Previously, we transformed the linear drain bias asymptote equation for the MOSFET drain current in the saturation regime from the “intrinsic” case into “extrinsic” case with accounting for the velocity saturation effect. We obtained the equation for the drain current that yielded the nonlinear dependence on the “extrinsic” drain bias in saturation regime in an implicit form. We derived the equation for the differential conductance of the MOSFET at the “saturation point” and proposed a linear approximation for the dependence of the drain current on the “extrinsic” drain bias in the saturation regime for not very high drain bias when nonlinear effects can be neglected. In this paper, we investigate the asymptotic behavior of the implicit equation for the drain current in case when “extrinsic” drain bias tends to infinity. We propose the nonlinear approximation for the drain current asymptotic that describes a slow current rise to its limiting value when the “extrinsic” drain bias tends to infinity. This approximation is based on analytical solution of quartic equation that can be solved easily enough using Ferrari's method.
Только метаданные
Degradation of bipolar transistors at high doses obtained at elevated temperature applied during gamma-irradiation
(2019) Petrov, A. S.; Tapero, K. I.; Galimov, A. M.; Zebrev, G. I.; Зебрев, Геннадий Иванович
© 2019 Elsevier LtdThe paper presents investigation results of radiation-induced change in current gain of bipolar transistors at elevated temperature applied during gamma-irradiation with high levels of dose. The regularities obtained during irradiation at elevated temperature coincide qualitatively with the data obtained previously during irradiation at low dose rate. Results of simulation confirm the possibility of applying of developed model of radiation induced degradation of bipolar transistor for irradiation at different temperatures.
Только метаданные
A linear "extrinsic" compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime
(2019) Turin, V.; Shkarlat, R.; Poyarkov, V.; Kshensky, O.; Zebrev, G.; Зебрев, Геннадий Иванович
© 2019 SPIE. We derived the equation for the drain current of a short-channel MOSFET with nonzero differential conductance in saturation regime describing its nonlinear dependence on "extrinsic" drain bias and accounting for the parasitic and contact series resistances. This implicit equation could be numerically solved in the entire range of the drain biases. We have also derived the equation for the differential conductance of the "extrinsic" MOSFET in the saturation regime. Finally, we have proposed a linear approximation for asymptotic dependence of the "extrinsic" MOSFET drain current on "extrinsic" drain bias in saturation regime.
Только метаданные
Compact modeling of electrical characteristics of p-MNOS based RADFETs
(2019) Mrozovskaya, E.; Zimin, P.; Chubunov, P.; Zebrev, G.; Мрозовская, Елизавета Владимировна; Чубунов, Павел Александрович; Зебрев, Геннадий Иванович
© 2019 SPIE. We simulated in this work the electrical characteristics of p-MNOS based dosimeters before and after irradiation. The parameters of dose sensitivity for the samples irradiated in the different electric modes of operation were obtained. A good agreement between simulation and the measurement results was shown.
Только метаданные
Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices
(2019) Zebrev, G. I.; Shostachenko, S. A.; Зебрев, Геннадий Иванович
© Published under licence by IOP Publishing Ltd. Near-interfacial oxide traps and chemical impurities on the graphene surface or at the graphene-dielectric interface can be a source of intentional or unintentional doping of graphene sheet. The efficiency of such chemical doping can vary in a wide range depending on parameters of graphene field effect devices. Mechanisms of such sensitivity of doping efficiency to the device characteristics need to be understood. The objective of this paper is to theoretically derive the analytical relations, adapted to the explicit calculation of graphene chemical doping.