Publication: Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices
Дата
2019
Авторы
Journal Title
Journal ISSN
Volume Title
Издатель
Аннотация
© Published under licence by IOP Publishing Ltd. Near-interfacial oxide traps and chemical impurities on the graphene surface or at the graphene-dielectric interface can be a source of intentional or unintentional doping of graphene sheet. The efficiency of such chemical doping can vary in a wide range depending on parameters of graphene field effect devices. Mechanisms of such sensitivity of doping efficiency to the device characteristics need to be understood. The objective of this paper is to theoretically derive the analytical relations, adapted to the explicit calculation of graphene chemical doping.
Описание
Ключевые слова
Цитирование
Zebrev, G. I. Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices / Zebrev, G.I., Shostachenko, S.A. // IOP Conference Series: Materials Science and Engineering. - 2019. - 475. - № 1. - 10.1088/1757-899X/475/1/012013