Publication:
Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices

dc.contributor.authorZebrev, G. I.
dc.contributor.authorShostachenko, S. A.
dc.contributor.authorЗебрев, Геннадий Иванович
dc.date.accessioned2024-11-20T09:51:29Z
dc.date.available2024-11-20T09:51:29Z
dc.date.issued2019
dc.description.abstract© Published under licence by IOP Publishing Ltd. Near-interfacial oxide traps and chemical impurities on the graphene surface or at the graphene-dielectric interface can be a source of intentional or unintentional doping of graphene sheet. The efficiency of such chemical doping can vary in a wide range depending on parameters of graphene field effect devices. Mechanisms of such sensitivity of doping efficiency to the device characteristics need to be understood. The objective of this paper is to theoretically derive the analytical relations, adapted to the explicit calculation of graphene chemical doping.
dc.identifier.citationZebrev, G. I. Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices / Zebrev, G.I., Shostachenko, S.A. // IOP Conference Series: Materials Science and Engineering. - 2019. - 475. - № 1. - 10.1088/1757-899X/475/1/012013
dc.identifier.doi10.1088/1757-899X/475/1/012013
dc.identifier.urihttps://www.doi.org/10.1088/1757-899X/475/1/012013
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85062683589&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/16666
dc.relation.ispartofIOP Conference Series: Materials Science and Engineering
dc.titleImpact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume475
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relation.isAuthorOfPublication.latestForDiscovery480f2f5c-4a04-4b0c-9e47-55e54fc07c4f
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