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Зебрев, Геннадий Иванович

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Институт нанотехнологий в электронике, спинтронике и фотонике

Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.

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Зебрев

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Геннадий Иванович

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Теперь показываю 1 - 10 из 29

Только метаданные
Physics-Based Modeling of the Single Event Upset Critical Charge in Digital Electronics
(2025) Mateiko, A. A.; Rodin, A. S.; Makarova, I. A.; Abramova, E. N.; Zebrev, G. I.; Матейко, Александр Андреевич; Родин, Александр Сергеевич; Зебрев, Геннадий Иванович
Только метаданные
Long-term Irradiation Effects in p-MNOS Transistor: Experiment Results
(2022) Mrozovskaya, E.; Chubunov, P.; Zebrev, G.; Мрозовская, Елизавета Владимировна; Чубунов, Павел Александрович; Зебрев, Геннадий Иванович
© 2022 SPIE.The dosimeters based on RADFETs are high actual for utilizing in space where the low dose rates irradiation prevails. The paper presents new experimental data on low-intensity irradiation of p-MNOS based RADFET. The obtained results were compared with the results of irradiation at high dose rates. The effect of ELDRS and the simultaneous annealing effect on different types of samples were discussed. The sensitivity of both types changed similarly at the range 1 - 100 rad(Si)/s. However, for dose rates less than 1 rad(Si)/s, the effect of the simultaneous annealing on change in the threshold voltage shift in time was clearly noticed only for samples with 500 nm oxide and absented for samples with 150 nm oxide.
Только метаданные
Compact modeling of electrical characteristics of p-MNOS based RADFETs
(2019) Mrozovskaya, E.; Zimin, P.; Chubunov, P.; Zebrev, G.; Мрозовская, Елизавета Владимировна; Чубунов, Павел Александрович; Зебрев, Геннадий Иванович
© 2019 SPIE. We simulated in this work the electrical characteristics of p-MNOS based dosimeters before and after irradiation. The parameters of dose sensitivity for the samples irradiated in the different electric modes of operation were obtained. A good agreement between simulation and the measurement results was shown.
Только метаданные
Compact Modeling of Body Effect for 'Extrinsic' MOSFETs
(2022) Turin, V.; Shcherbina, M.; Shkarlat, R.; Kokin, S.; Kshensky, O.; Poyarkov, V.; Zebrev, G.; Зебрев, Геннадий Иванович
© 2022 IEEE.One of the MOSFET compact modeling challenges is a correct account of the finite output resistance in saturation due to different short channel effects. Previously, we proposed a new 'improved' smoothing function that ensures a monotonic increase in output resistance from the minimum value at the beginning of the triode regime to the maximum value at saturation. We used this smoothing function for compact modeling of an ' intrinsic' (with neglecting the contacts parasitic resistances) MOSFET. Later, we proposed a linear approximation for the drain current dependence on drain bias in the saturation regime for the 'extrinsic' (taking into account contact parasitic resistances) MOSFET without taking into account body effect. This approximation is based on the proposed by us equations for the output resistance of the 'extrinsic' MOSFET in the saturation regime (one for Level l and second for BSIM3 /4 models). Later, we generalized this equation on the case with accounting for the body effect, that was considered in the linear approximation. Note that modern transistors with steep retrograde body doping profiles exhibit approximately linear relationship between a threshold voltage and a source-to-body bias. In addition, we have shown how it is possible to convert a transistor with a body terminal to an equivalent transistor without a body terminal. In this paper, we use an 'improved' smoothing function for compact modeling of the drain current of an 'extrinsic' MOSFET operating in the above threshold regime that accounts for the body effect in the linear approximation. The resulting model yields a monotonic decrease in output conductance, which is important for improving the accuracy of MOSFET compact modeling in CAD software. Furthermore, we analyze in detail the relationship between the equation obtained for the output resistance of the 'extrinsic' MOSFET in the saturation regime with the output resistance of a common-source amplifier with source degeneration. Note that in the theory of a common-source amplifier the circuit that consists of an NMOS transistor with a resistor in series with its source terminal is known as a transistor with source degeneration.
Открытый доступ
МЕТОД АНАЛИТИЧЕСКОЙ ОЦЕНКИ ЧАСТОТЫ ОДИНОЧНЫХ СБОЕВ ОТ ГАЛАКТИЧЕСКИХ КОСМИЧЕСКИХ ЛУЧЕЙ В ЦИФРОВОЙ ЭЛЕКТРОНИКЕ
(НИЯУ МИФИ, 2026) Зебрев, Г. И.; Родин, А. С.; Матейко, А. А.; Матейко, Александр Андреевич; Родин, Александр Сергеевич; Зебрев, Геннадий Иванович
Предложена физическая модель для аналитического расчёта частоты одиночных сбоев (Soft Error Rate, SER) в цифровых запоминающих устройствах под воздействием тяжёлых ионов на космических орбитах. Данный метод основан на параметрах, которые однозначно определяются по результатам наземных испытаний при нормальном падении ионов. Показано, что предварительное усреднение по полному телесному углу в рамках стандартной модели обратного косинуса позволяет учесть влияние изотропного потока, которое увеличивает эффективную частоту SER. Модель включает возможность оценки вклада в SER области спектра с низким значением линейной передачи энергии, что очень важно для современных интегральных схем с низкой устойчивостью к сбоям.
Только метаданные
A piecewise approximation for short-channel “extrinsic” MOSFET drain current dependence on drain-to-source bias including linear triode, linear saturation and asymptotic saturation regimes
(2019) Turin, V. O.; Shkarlat, R. S.; Rakhmatov, B. A.; Kim, C. -H.; Zebrev, G. I.; Зебрев, Геннадий Иванович
© The Electrochemical Society.Previously, we transformed the linear drain bias asymptote equation for the MOSFET drain current in the saturation regime from the “intrinsic” case into “extrinsic” case with accounting for the velocity saturation effect. We obtained the equation for the drain current that yielded the nonlinear dependence on the “extrinsic” drain bias in saturation regime in an implicit form. We derived the equation for the differential conductance of the MOSFET at the “saturation point” and proposed a linear approximation for the dependence of the drain current on the “extrinsic” drain bias in the saturation regime for not very high drain bias when nonlinear effects can be neglected. In this paper, we investigate the asymptotic behavior of the implicit equation for the drain current in case when “extrinsic” drain bias tends to infinity. We propose the nonlinear approximation for the drain current asymptotic that describes a slow current rise to its limiting value when the “extrinsic” drain bias tends to infinity. This approximation is based on analytical solution of quartic equation that can be solved easily enough using Ferrari's method.
Только метаданные
Simulation of annealing and the ELDRS in p-MNOS RadFETs
(2019) Maslovsky, V. M.; Mrozovskaya, E. V.; Zimin, P. A.; Chubunov, P. A.; Zebrev, G. I.; Мрозовская, Елизавета Владимировна; Чубунов, Павел Александрович; Зебрев, Геннадий Иванович
© 2019 by Begell House, Inc.The manifestation of simultaneous annealing in p-MNOS (metal–nitride–oxide‑semiconductor) samples with thick oxide and a pronounced effect of enhanced low-dose-rate sensitivity (ELDRS) are investigated. The simulation was based on experimental data.
Только метаданные
Analytical Physics-Based Modeling of Electron Channel Density in Nanosheet and Nanowire Transistors
(2023) Zebrev, G. I.; Malich, D. S.; Зебрев, Геннадий Иванович
Открытый доступ
Моделирование дозовых и одиночных радиационных эффектов в кремниевых микро- и наноэлектронных структурах для целей проектирования и прогнозирования
(МИФИ, 2009) Зебрев, Г. И.; Зебрев, Геннадий Иванович
Только метаданные
The 'Extrinsic' Compact Model of the MOSFET Drain Current Based on a New Interpolation Expression for the Transition between Linear and Saturation Regimes with a Monotonic Decrease of the Differential Conductance to a Nonzero Value
(2020) Turin, V. O.; Shkarlat, R. S.; Iniguez, B.; Shur, M. S.; Zebrev, G. I.; Зебрев, Геннадий Иванович
© 2020 IEEE.Previously, we proposed a new interpolation expression to bridge the transition between the linear and the saturation regimes of 'intrinsic' MOSFET. This approach, in contrast to the traditional one, gives a monotonic decrease of the differential conductance from the maximum value in the linear regime to the minimum value in the saturation regime. Later, we proposed a linear approximation for an 'extrinsic' MOSFET drain current dependence on the 'extrinsic' drain bias in the saturation regime for not very high drain bias when nonlinear effects can be neglected. To obtain this approximation, an equation for the output differential resistance of the 'extrinsic' MOSFET in saturation regime was obtained, that is similar to the result known from the theory of the common source MOSFET amplifier with source degeneration. In this paper, we combine these two results and present an 'extrinsic' compact model for a short-channel MOSFET above threshold drain current with proper account of the differential conductance in the saturation regime.