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Зебрев, Геннадий Иванович

Организационные подразделения

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Институт нанотехнологий в электронике, спинтронике и фотонике

Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.

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Зебрев

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Геннадий Иванович

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Теперь показываю 1 - 10 из 23

Только метаданные
Simulation of annealing and the ELDRS in p-MNOS RadFETs
(2019) Maslovsky, V. M.; Mrozovskaya, E. V.; Zimin, P. A.; Chubunov, P. A.; Zebrev, G. I.; Мрозовская, Елизавета Владимировна; Чубунов, Павел Александрович; Зебрев, Геннадий Иванович
© 2019 by Begell House, Inc.The manifestation of simultaneous annealing in p-MNOS (metal–nitride–oxide‑semiconductor) samples with thick oxide and a pronounced effect of enhanced low-dose-rate sensitivity (ELDRS) are investigated. The simulation was based on experimental data.
Только метаданные
The 'Extrinsic' Compact Model of the MOSFET Drain Current Based on a New Interpolation Expression for the Transition between Linear and Saturation Regimes with a Monotonic Decrease of the Differential Conductance to a Nonzero Value
(2020) Turin, V. O.; Shkarlat, R. S.; Iniguez, B.; Shur, M. S.; Zebrev, G. I.; Зебрев, Геннадий Иванович
© 2020 IEEE.Previously, we proposed a new interpolation expression to bridge the transition between the linear and the saturation regimes of 'intrinsic' MOSFET. This approach, in contrast to the traditional one, gives a monotonic decrease of the differential conductance from the maximum value in the linear regime to the minimum value in the saturation regime. Later, we proposed a linear approximation for an 'extrinsic' MOSFET drain current dependence on the 'extrinsic' drain bias in the saturation regime for not very high drain bias when nonlinear effects can be neglected. To obtain this approximation, an equation for the output differential resistance of the 'extrinsic' MOSFET in saturation regime was obtained, that is similar to the result known from the theory of the common source MOSFET amplifier with source degeneration. In this paper, we combine these two results and present an 'extrinsic' compact model for a short-channel MOSFET above threshold drain current with proper account of the differential conductance in the saturation regime.
Только метаданные
Modelling of saturation current of an organic field-effect transistor with accounting for contact resistances
(2019) Turin, V. O.; Rakhmatov, B. A.; Kim, C. H.; Iniguez, B.; Zebrev, G. I.; Зебрев, Геннадий Иванович
© 2019 Published under licence by IOP Publishing Ltd. The saturation current of an organic field-effect transistor was calculated numerically by bisection method taking into account the source and drain resistances. Dependences of the saturation current as a function of the gate voltage, centred on the threshold voltage, and as a function of the "extrinsic" (taking into account the source and drain resistances) saturation voltage are presented. The calculations were carried out using an iterative scheme assuming the saturation current to be zero for iteration zero and using different numbers of iterations. In addition, we carried out a compact modelling of the saturation current in the framework of the approach we proposed earlier. It is shown that when in the equation for the compact modelling initial value of saturation current of zero value (corresponding to zero iteration) is used, a good agreement with the bisection method of over a wide range of gate voltages is obtained.
Только метаданные
Second International Telecommunication Conference on Advanced Micro- and Nanoelectronic Systems and Technologies
(2019) Pershenkov, V. S.; Veselov, D. S.; Zebrev, G. I.; Веселов, Денис Сергеевич; Зебрев, Геннадий Иванович
Только метаданные
Static and dynamic oxide-Trapped-charge-induced variability in nanoscale CMOS circuits
(2019) Zebrev, G.; Зебрев, Геннадий Иванович
© 1963-2012 IEEE. The interdevice mismatch and intradevice temporal instability in the nanoscale CMOS circuits is examined from a unified point of view as a static and dynamic parts of the variability concerned with stochastic oxide charge trapping and detrapping. This approach has been benchmarked on the recent evidence of the radiation-induced increase of intertransistor mismatch in 60-nm ICs. A possible reliability limitation in ultrascale circuits concerned with the single or a few charged defect instability is pointed out and estimated.
Только метаданные
A piecewise approximation for short-channel “extrinsic” MOSFET drain current dependence on drain-to-source bias including linear triode, linear saturation and asymptotic saturation regimes
(2019) Turin, V. O.; Shkarlat, R. S.; Rakhmatov, B. A.; Kim, C. -H.; Zebrev, G. I.; Зебрев, Геннадий Иванович
© The Electrochemical Society.Previously, we transformed the linear drain bias asymptote equation for the MOSFET drain current in the saturation regime from the “intrinsic” case into “extrinsic” case with accounting for the velocity saturation effect. We obtained the equation for the drain current that yielded the nonlinear dependence on the “extrinsic” drain bias in saturation regime in an implicit form. We derived the equation for the differential conductance of the MOSFET at the “saturation point” and proposed a linear approximation for the dependence of the drain current on the “extrinsic” drain bias in the saturation regime for not very high drain bias when nonlinear effects can be neglected. In this paper, we investigate the asymptotic behavior of the implicit equation for the drain current in case when “extrinsic” drain bias tends to infinity. We propose the nonlinear approximation for the drain current asymptotic that describes a slow current rise to its limiting value when the “extrinsic” drain bias tends to infinity. This approximation is based on analytical solution of quartic equation that can be solved easily enough using Ferrari's method.
Только метаданные
Degradation of bipolar transistors at high doses obtained at elevated temperature applied during gamma-irradiation
(2019) Petrov, A. S.; Tapero, K. I.; Galimov, A. M.; Zebrev, G. I.; Зебрев, Геннадий Иванович
© 2019 Elsevier LtdThe paper presents investigation results of radiation-induced change in current gain of bipolar transistors at elevated temperature applied during gamma-irradiation with high levels of dose. The regularities obtained during irradiation at elevated temperature coincide qualitatively with the data obtained previously during irradiation at low dose rate. Results of simulation confirm the possibility of applying of developed model of radiation induced degradation of bipolar transistor for irradiation at different temperatures.
Только метаданные
An Accurate Analytical Modeling of Contact Resistances in MOSFETs
(2021) Turin, V. O.; Bokitko, G. D.; Malich, D. S.; Zebrev, G. I.; Зебрев, Геннадий Иванович
© 2021 IEEE.We have presented an analytical physics-based model, which can continually describe the MOSFET I- V curves in all operation modes taking into account the finite source-drain resistances.
Только метаданные
Gallium Nitride FET Model
(2019) Orlov, V. V.; Zebrev, G. I.; Зебрев, Геннадий Иванович
© Published under licence by IOP Publishing Ltd. We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the source-drain resistance, different interface trap densities and self-heating effects.
Только метаданные
Compact Modeling of Body Effect for 'Extrinsic' MOSFETs
(2022) Turin, V.; Shcherbina, M.; Shkarlat, R.; Kokin, S.; Kshensky, O.; Poyarkov, V.; Zebrev, G.; Зебрев, Геннадий Иванович
© 2022 IEEE.One of the MOSFET compact modeling challenges is a correct account of the finite output resistance in saturation due to different short channel effects. Previously, we proposed a new 'improved' smoothing function that ensures a monotonic increase in output resistance from the minimum value at the beginning of the triode regime to the maximum value at saturation. We used this smoothing function for compact modeling of an ' intrinsic' (with neglecting the contacts parasitic resistances) MOSFET. Later, we proposed a linear approximation for the drain current dependence on drain bias in the saturation regime for the 'extrinsic' (taking into account contact parasitic resistances) MOSFET without taking into account body effect. This approximation is based on the proposed by us equations for the output resistance of the 'extrinsic' MOSFET in the saturation regime (one for Level l and second for BSIM3 /4 models). Later, we generalized this equation on the case with accounting for the body effect, that was considered in the linear approximation. Note that modern transistors with steep retrograde body doping profiles exhibit approximately linear relationship between a threshold voltage and a source-to-body bias. In addition, we have shown how it is possible to convert a transistor with a body terminal to an equivalent transistor without a body terminal. In this paper, we use an 'improved' smoothing function for compact modeling of the drain current of an 'extrinsic' MOSFET operating in the above threshold regime that accounts for the body effect in the linear approximation. The resulting model yields a monotonic decrease in output conductance, which is important for improving the accuracy of MOSFET compact modeling in CAD software. Furthermore, we analyze in detail the relationship between the equation obtained for the output resistance of the 'extrinsic' MOSFET in the saturation regime with the output resistance of a common-source amplifier with source degeneration. Note that in the theory of a common-source amplifier the circuit that consists of an NMOS transistor with a resistor in series with its source terminal is known as a transistor with source degeneration.