Publication: Degradation of bipolar transistors at high doses obtained at elevated temperature applied during gamma-irradiation
Дата
2019
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© 2019 Elsevier LtdThe paper presents investigation results of radiation-induced change in current gain of bipolar transistors at elevated temperature applied during gamma-irradiation with high levels of dose. The regularities obtained during irradiation at elevated temperature coincide qualitatively with the data obtained previously during irradiation at low dose rate. Results of simulation confirm the possibility of applying of developed model of radiation induced degradation of bipolar transistor for irradiation at different temperatures.
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Degradation of bipolar transistors at high doses obtained at elevated temperature applied during gamma-irradiation / Petrov, A.S. [et al.] // Microelectronics Reliability. - 2019. - 100-101. - 10.1016/j.microrel.2019.06.070
URI
https://www.doi.org/10.1016/j.microrel.2019.06.070
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https://openrepository.mephi.ru/handle/123456789/18842
https://www.scopus.com/record/display.uri?eid=2-s2.0-85074538204&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000503907900155
https://openrepository.mephi.ru/handle/123456789/18842