Publication:
Degradation of bipolar transistors at high doses obtained at elevated temperature applied during gamma-irradiation

dc.contributor.authorPetrov, A. S.
dc.contributor.authorTapero, K. I.
dc.contributor.authorGalimov, A. M.
dc.contributor.authorZebrev, G. I.
dc.contributor.authorЗебрев, Геннадий Иванович
dc.date.accessioned2024-11-21T14:41:42Z
dc.date.available2024-11-21T14:41:42Z
dc.date.issued2019
dc.description.abstract© 2019 Elsevier LtdThe paper presents investigation results of radiation-induced change in current gain of bipolar transistors at elevated temperature applied during gamma-irradiation with high levels of dose. The regularities obtained during irradiation at elevated temperature coincide qualitatively with the data obtained previously during irradiation at low dose rate. Results of simulation confirm the possibility of applying of developed model of radiation induced degradation of bipolar transistor for irradiation at different temperatures.
dc.identifier.citationDegradation of bipolar transistors at high doses obtained at elevated temperature applied during gamma-irradiation / Petrov, A.S. [et al.] // Microelectronics Reliability. - 2019. - 100-101. - 10.1016/j.microrel.2019.06.070
dc.identifier.doi10.1016/j.microrel.2019.06.070
dc.identifier.urihttps://www.doi.org/10.1016/j.microrel.2019.06.070
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85074538204&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000503907900155
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18842
dc.relation.ispartofMicroelectronics Reliability
dc.titleDegradation of bipolar transistors at high doses obtained at elevated temperature applied during gamma-irradiation
dc.typeArticle
dspace.entity.typePublication
oaire.citation.volume100-101
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relation.isAuthorOfPublication.latestForDiscovery480f2f5c-4a04-4b0c-9e47-55e54fc07c4f
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