Персона: Родин, Александр Сергеевич
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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Александр Сергеевич
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20 results
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Теперь показываю 1 - 10 из 20
- ПубликацияТолько метаданныеReduced Low Dose Rate Sensitivity (RLDRS) in Bipolar Devices(2019) Pershenkov, V.; Bakerenkov, A.; Rodin, A.; Felitsyn, V.; Telets, V.; Belyakov, V.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич© 2019 IEEE.Possible physical mechanism of reduced low dose rate sensitivity in bipolar devices is described. The reduced sensitivity can be connected with a specific position of effective Fermi level relatively acceptor and donor radiation-induced interface traps.
- ПубликацияТолько метаданныеExperimental Estimation of Input Offset Voltage Radiation Degradation Rate in Bipolar Operational Amplifiers(2019) Bakerenkov, A.; Pershenkov, V.; Felitsyn, V.; Rodin, A.; Telets, V.; Belyakov, V.; Zhukov, A.; Glukhov, N.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич; Жуков, Александр Иванович© 2019 IEEE.Radiation degradation rate of input offset voltage in bipolar operational amplifiers was estimated experimentally. High degradation rate was observed in devices with high input offset voltage initial values and temperature drifts. Obtained results were discussed.
- ПубликацияТолько метаданныеCorrelation between temperature and dose rate dependences of input bias current degradation in bipolar operational amplifiers(2019) Bakerenkov, A.; Pershenkov, V.; Felitsyn, V.; Rodin, A.; Telets, V.; Belyakov, V.; Zhukov, A.; Glukhov, N.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич; Жуков, Александр Иванович© 2019 IEEE.It was demonstrated experimentally that in ELDRS-susceptible operational amplifiers elevated temperature irradiation increases degradation rate of input bias current, while in ELDRS-free devices degradation rates at room and elevated temperatures are approximately equal.
- ПубликацияТолько метаданныеRadiation hardness estimation in various temperature conditions under radiation impact(2019) Bakerenkov, A. S.; Rodin, A. S.; Felitsyn, V. A.; Pershenkov, V. S.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич© 2019 Published under licence by IOP Publishing Ltd. The application of the ELDRS conversion model for numerical simulation of the radiation degradation of input bias current in widely used voltage comparator is presented. The recurrence relations for numerical simulations were obtained and used calculations of the estimation of the radiation response of LM111 input bias current in real operation temperature conditions of TechEdSat satellite.
- ПубликацияТолько метаданныеRadiation Hardened Analog-to-Digital Convertor with Automatic Offset Voltage Compensation(2019) Felitsyn, V. A.; Bakerenkov, A. S.; Zhukov, A. I.; Butuzov, V. A.; Bocharov, Y. I.; Pershenkov, V. S.; Rodin, A. S.; Telets, V. A.; Belyakov, V. V.; Бакеренков, Александр Сергеевич; Жуков, Александр Иванович; Бутузов, Владимир Алексеевич; Бочаров, Юрий Иванович; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич© 2019 IEEE.Radiation hardened ADC with automatic offset voltage compensation was developed. TID radiation effect in the ADC was investigated at different temperatures. The designed ADC devices demonstrate high radiation hardness. Up to total dose level 100 krad(Si) any significant radiation induced drift didn't observed in transfer characteristics of all irradiated devices. It is achieved by using techniques such as application of automatic offset voltage compensation circuit together with enclosed layout transistors (ELT), located in ADC control logic. Also, edge-less n-channel MOSFETs with additional guard rings were used to increase the radiation hardness of digital interface and control logic of ADC. In contrast with control logic ELT not used in interface logic. Thus significant degradation of digital interface power supply current was observed unlike control logic power supply. Developed device can be considered as a good technical decision for self-diagnostic systems of electronic devices proposed for application under ionizing radiation impact, especially for systems of spacecrafts and satellites.
- ПубликацияТолько метаданныеRadiation Degradation of Temperature Dependences of Electrical Parameters of Bipolar Operational Amplifiers(2019) Bakerenkov, A. S.; Pershenkov, V. S.; Felitsyn, V. A.; Rodin, A. S.; Telets, V. A.; Belyakov, V. V.; Zhukov, A. I.; Glukhov, N. S.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич; Жуков, Александр Иванович© 2019 IEEE.The impact of radiation degradation on the temperature dependence of electrical parameters of bipolar operational amplifiers is presented. Results of the researches can improve our understanding of physical and circuit radiation effects in bipolar operational amplifiers.
- ПубликацияТолько метаданныеInfluence of temperature and electrical modes on radiation sensitivity and errors of RADFETs(2019) Podlepetsky, B. I.; Pershenkov, V. S.; Bakerenkov, A. S.; Felitsyn, V. A.; Rodin, A. S.; Подлепецкий, Борис Иванович; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич© 2019 IEEE.Influence of temperature and electrical modes on sensitivity and errors of ionizing radiation dose senor based on n- MOSFET (called as RADFET) have been investigated. There were measured the circuit's output voltages being equal to the gate voltage of RADFET-based dosimeter as function of the radiation doses at const values of the drain current and the drain - source voltage (conversion functions), as well as the current - voltage characteristics before, during and after irradiations at different temperatures. We showed how conversion functions, radiation sensitivities and errors are depending on the temperature and electrical modes. It is found that the conversion functions) have two characteristic regions for low and high doses (with negative and with positive radiation sensitivities). To interpret experimental data there were proposed the models of conversion function, its components and errors taking into account the separate contributions of charges in the dielectric and in SiO2-Si interface. Proposed models interpreting the experimental data can be used to predict performances of RADFET-based dosimeters.
- ПубликацияТолько метаданныеEffect of elevated temperature irradiation on bipolar devices for space application(2019) Pershenkov, V. S.; Telets, V. A.; Bakerenkov, A. S.; Rodin, A. S.; Felitsyn, V. A.; Belyakov, V. V.; Телец, Виталий Арсеньевич; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Беляков, Владимир Васильевич© 2019, © 2019 Informa UK Limited, trading as Taylor & Francis Group. The application of elevated temperature irradiation for simulating of low dose rate degradation in bipolar devices was considered. The analysis was performed in the framework of the conversion model, which enables to estimate the radiation degradation at any dose rate, temperature and total dose numerically. The possibility of application of the conversion model for the numerical estimation of radiation-induced increase of LM111 input current under low dose rate radiation impact was demonstrated experimentally. A test method using four-stage elevated single temperature irradiation was proposed. The ability of temperature-switching approach for simulation of enhanced low-dose-rate sensitivity was estimated and discussed.
- ПубликацияТолько метаданныеTID Sensor Based on a Bipolar Transistor(2020) Bakerenkov, A. S.; Pershenkov, V. S.; Felitsyn, V. A.; Rodin, A. S.; Telets, V. A.; Belyakov, V. V.; Zhukov, A. I.; Glukhov, N. S.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич; Жуков, Александр Иванович© 2020 IEEE.The performance of the total ionizing dose sensor based on a bipolar transistor were researched in this work.
- ПубликацияОткрытый доступРасчетно-экспериментальная оценка радиационной стойкости биполярных приборов при эксплуатации в переменных условиях космического пространства(НИЯУ МИФИ, 2019) Родин, А. С.; Родин, Александр Сергеевич; Першенков, В. С.