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Родин, Александр Сергеевич

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Институт нанотехнологий в электронике, спинтронике и фотонике

Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.

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Родин

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Александр Сергеевич

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Теперь показываю 1 - 10 из 19

Только метаданные
Reduced Low Dose Rate Sensitivity (RLDRS) in Bipolar Devices
(2019) Pershenkov, V.; Bakerenkov, A.; Rodin, A.; Felitsyn, V.; Telets, V.; Belyakov, V.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич
© 2019 IEEE.Possible physical mechanism of reduced low dose rate sensitivity in bipolar devices is described. The reduced sensitivity can be connected with a specific position of effective Fermi level relatively acceptor and donor radiation-induced interface traps.
Только метаданные
Experimental Estimation of Input Offset Voltage Radiation Degradation Rate in Bipolar Operational Amplifiers
(2019) Bakerenkov, A.; Pershenkov, V.; Felitsyn, V.; Rodin, A.; Telets, V.; Belyakov, V.; Zhukov, A.; Glukhov, N.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич; Жуков, Александр Иванович
© 2019 IEEE.Radiation degradation rate of input offset voltage in bipolar operational amplifiers was estimated experimentally. High degradation rate was observed in devices with high input offset voltage initial values and temperature drifts. Obtained results were discussed.
Только метаданные
Correlation between temperature and dose rate dependences of input bias current degradation in bipolar operational amplifiers
(2019) Bakerenkov, A.; Pershenkov, V.; Felitsyn, V.; Rodin, A.; Telets, V.; Belyakov, V.; Zhukov, A.; Glukhov, N.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич; Жуков, Александр Иванович
© 2019 IEEE.It was demonstrated experimentally that in ELDRS-susceptible operational amplifiers elevated temperature irradiation increases degradation rate of input bias current, while in ELDRS-free devices degradation rates at room and elevated temperatures are approximately equal.
Только метаданные
ENHANCED LOW DOSE RATE SENSITIVITY (ELDRS) AND REDUCED LOW DOSE RATE SENSITIVITY (RLDRS) IN BIPOLAR DEVICES.
(2020) Pershenkov, V. S.; Bakerenkov, A. S.; Rodin, A. S.; Felitsyn, V. A.; Zhukov, A. I.; Telets, V. A.; Belyakov, V. V.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Жуков, Александр Иванович; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич
Possible physical mechanism of enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate sensitivity (RLDRS) in bipolar devices is described. Modification of the low dose rate conversion model is presented. The enhanced or reduced sensitivity can be connected with a specific position of the effective Fermi level relatively acceptor and donor radiation-induced interface traps. The qualitative and quantitative analysis of the low dose rate effects is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge were taken into account. It leads to dependence of the accumulation of radiation-induced oxide charge and interface traps on the dose rate. In enhancement version the ELDRS and RLDRS conversion model describes the low dose rate effect in as "true" dose rate effect.
Только метаданные
Evaluation of radiation hardness of the bipolar devices in the space conditions
(2020) Rodin, A. S.; Bakerenkov, A. S.; Felitsyn, V. A.; Pershenkov, V. S.; Telets, V. A.; Родин, Александр Сергеевич; Бакеренков, Александр Сергеевич; Телец, Виталий Арсеньевич
© Springer Nature Switzerland AG 2020.Real time dependence of operation temperature, which is typical for space environment, was taken into account in the numerical simulation of radiation degradation of LM111 bipolar voltage comparator input current. The technique and results of performed numerical analyses are presented and discussed.
Только метаданные
“True” dose rate effect of the eldrs conversion model
(2020) Pershenkov, V. S.; Bakerenkov, A. S.; Telets, V. A.; Belyakov, V. V.; Felitsyn, V. A.; Rodin, A. S.; Бакеренков, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич; Родин, Александр Сергеевич
© Springer Nature Switzerland AG 2020.Modification of the ELDRS (Enhanced Low Dose Rate Sensitivity) conversion model is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge takes into account. It leads to dependence of the accumulation of radiation-induced oxide charge and interface traps on the dose rate. In enhancement version the ELDRS conversion model describes the low dose rate effect as “true” dose rate effect.
Только метаданные
Ionizing radiation dose sensor based on n-channel MOSFET
(2020) Podlepetsky, B.; Pershenkov, V. S.; Belyakov, V. V.; Bakerenkov, A. S.; Felitsyn, V. A.; Rodin, A. S.; Подлепецкий, Борис Иванович; Беляков, Владимир Васильевич; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич
© Springer Nature Switzerland AG 2020.We investigated the radiation sensitivity of dose-metrical sensors based on n-channel MOSFETs taking into account the effects of temperature and electrical modes. There were measured the output voltages V being equal to the gate voltage VG of MOSFET-based dosimeter as function of the radiation doses at const values of the drain current ID and the drain—source voltage VD (conversion functions), as well as the (ID − VG) characteristics before, during and after irradiations at different temperatures. It was shown how the conversion functions and the radiation sensitivities are depending on the temperature and electrical modes. It is found that the conversion functions V(D) have two characteristic regions for low and high doses (with negative and with positive radiation sensitivities). To interpret experimental data there were proposed the models of conversion function and its components taking into account the separate contributions of charges in the dielectric and in SiO2–Si interface.
Только метаданные
True Dose Rate Effect of the ELDRS Conversional Model
(2020) Pershenkov, V. S.; Zhukov, A. S.; Belyakov, V. V.; Bakerenkov, A. S.; Telets, V. A.; Felitsyn, V. A.; Rodin, A. S.; Беляков, Владимир Васильевич; Бакеренков, Александр Сергеевич; Телец, Виталий Арсеньевич; Родин, Александр Сергеевич
The possible physical mechanism of true dose rate effect is described using ELDRS conversional model. The effect of the oxide trapped charge on the value of the oxide electric field is taken into account. © 2020 IEEE.
Только метаданные
Radiation hardness estimation in various temperature conditions under radiation impact
(2019) Bakerenkov, A. S.; Rodin, A. S.; Felitsyn, V. A.; Pershenkov, V. S.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич
© 2019 Published under licence by IOP Publishing Ltd. The application of the ELDRS conversion model for numerical simulation of the radiation degradation of input bias current in widely used voltage comparator is presented. The recurrence relations for numerical simulations were obtained and used calculations of the estimation of the radiation response of LM111 input bias current in real operation temperature conditions of TechEdSat satellite.
Только метаданные
Radiation Hardened Analog-to-Digital Convertor with Automatic Offset Voltage Compensation
(2019) Felitsyn, V. A.; Bakerenkov, A. S.; Zhukov, A. I.; Butuzov, V. A.; Bocharov, Y. I.; Pershenkov, V. S.; Rodin, A. S.; Telets, V. A.; Belyakov, V. V.; Бакеренков, Александр Сергеевич; Жуков, Александр Иванович; Бутузов, Владимир Алексеевич; Бочаров, Юрий Иванович; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич
© 2019 IEEE.Radiation hardened ADC with automatic offset voltage compensation was developed. TID radiation effect in the ADC was investigated at different temperatures. The designed ADC devices demonstrate high radiation hardness. Up to total dose level 100 krad(Si) any significant radiation induced drift didn't observed in transfer characteristics of all irradiated devices. It is achieved by using techniques such as application of automatic offset voltage compensation circuit together with enclosed layout transistors (ELT), located in ADC control logic. Also, edge-less n-channel MOSFETs with additional guard rings were used to increase the radiation hardness of digital interface and control logic of ADC. In contrast with control logic ELT not used in interface logic. Thus significant degradation of digital interface power supply current was observed unlike control logic power supply. Developed device can be considered as a good technical decision for self-diagnostic systems of electronic devices proposed for application under ionizing radiation impact, especially for systems of spacecrafts and satellites.