Персона: Козловский, Владимир Иванович
Загружается...
Email Address
Birth Date
Научные группы
Организационные подразделения
Организационная единица
Инженерно-физический институт биомедицины
Цель ИФИБ и стратегия развития – это подготовка высококвалифицированных кадров на базе передовых исследований и разработок новых перспективных методов и материалов в области инженерно-физической биомедицины. Занятие лидерских позиций в биомедицинских технологиях XXI века и внедрение их в образовательный процесс, что отвечает решению практикоориентированной задачи мирового уровня – диагностике и терапии на клеточном уровне социально-значимых заболеваний человека.
Статус
Фамилия
Козловский
Имя
Владимир Иванович
Имя
13 results
Результаты поиска
Теперь показываю 1 - 10 из 13
- ПубликацияТолько метаданныеOptically pumped semiconductor laser based on a type-II CdS/ZnSe heterostructure(2020) Skasyrsky, Y. K.; Butaev, M. R.; Kozlovsky, V. I.; Козловский, Владимир Иванович© 2020 Kvantovaya Elektronika and Turpion Ltd.An optically pumped semiconductor laser based on a type-II CdS/ZnSe nanoheterostructure containing 10 quantum wells (QWs) was studied. The structure was grown by metalorganic vapour phase epitaxy on a GaAs substrate. The lifetime of electron-hole pairs at a low pump level was measured by luminescence decay to be ≈10 ns. The peak power of the microcavity semiconductor laser at room temperature and longitudinal pumping by a repetitively pulsed N2 laser was 7.2 W at a wavelength of 514 nm. The relatively low laser slope efficiency (0.35%) is explained by amplified spontaneous emission propagating along the structure. The peak power and efficiency of the laser in the case of transverse pumping increase to 70 W and 3.5%, respectively.
- ПубликацияТолько метаданныеNanosecond semiconductor disk laser emitting at 496.5 nm(2020) Skasyrsky, Ya. K.; Butaev, M. R.; Kozlovsky, V. I.; Козловский, Владимир Иванович© 2020 Kvantovaya Elektronika and IOP Publishing LimitedAn optically pumped semiconductor disk laser based on a heterostructure containing ten CdS/ZnSe coupled quantum wells with type-II band offsets is studied. The structure was grown by metalorganic vapour phase epitaxy (MOVPE) on a GaAs substrate. The peak power of the semiconductor disk laser achieved at room temperature under longitudinal pumping by a repetitively pulsed N2 laser was 0.75 W at a wavelength of 496.5 nm, a pulse duration of 3 ns, and a pulse repetition rate of 100 Hz. The slope efficiency of the disk laser was 2.7 %. The total divergence angle at a cavity length of 1.1 mm varied from 5 mrad near the lasing threshold to 15 mrad at the maximum pump power.
- ПубликацияТолько метаданныеThermoelectrically cooled, repetitively pulsed Fe: ZnSe laser(2019) Zakharov, N. G.; Zakhryapa, A. V.; Korostelin, Yu. V.; Skasyrsky, Ya. K.; Kozlovsky, K. I.; Козловский, Владимир ИвановичWe report the investigation of a repetitively pulsed laser based on a Fe : ZnSe crystal, cooled to a temperature of 195 K by two thermoelectric modules with a maximum cooling power of 34 W. Two pulsed synchronised Er : YAG lasers, operating in the free-lasing regime, are used for pumping. It is shown that the average laser power in a series of short pulses may exceed 20 W. An average power of 3.1 W is attained in the stationary temperature regime. The lasing spectrum is centred at a wavelength of 4.38 mu m, and the total divergence angle is 5 mrad.
- ПубликацияТолько метаданныеStudy of a room temperature, monocrystalline Fe:ZnSe laser, pumped by a high-energy, free-running Er:YAG laser(2019) Frolov, M. P.; Korostelin, Yu. V.; Skasyrsky, Ya. K.; Kozlovsky, V. I.; Козловский, Владимир ИвановичThe energy and spectral characteristics of an Fe:ZnSe laser, pumped by 300 mu s pulses of a 2.94 mu m flash-lamp pumped free-running Er:YAG laser, are studied in the temperature range of 5 degrees C-18 degrees C. At 5 degrees C, the output energy reaches 1.6 J with a slope efficiency of 25% with respect to the absorbed pump energy. In a nonselective cavity, the emission spectrum demonstrates a shift to the longwave region with a decrease in the transmittance of the output coupler.
- ПубликацияТолько метаданныеInvestigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure(2019) Andreev, A. Y.; Bagaev, T. A.; Gamov, N. A.; Zhdanova, E. V.; Butaev, M. R.; Kozlovsky, V. I.; Козловский, Владимир Иванович© 2019 Kvantovaya Elektronika, Turpion Ltd and IOP Publishing Ltd.We report the results of a study of an e-beam pumped vertical-external-cavity surface-emitting laser (VECSEL) based on an InGaAs/AlGaAs heterostructure. Metalorganic chemical vapour deposition (MOCVD) is employed to grow two structures of different design, which contain 10 quantum wells (QWs) and a built-in distributed Bragg reflector (DBR) mirror. Under repetitively pulsed electron-beam excitation (50 Hz, 250 ns), a peak output power of 5.5 W is achieved at a wavelength of 2.5 W and an output power of 2.5 W at 1.013 μm with a total convergence angle no larger than 20 mrad.
- ПубликацияТолько метаданныеCd diffusion in CdS/ZnSe MQW heterostructures grown by MOVPE for semiconductor disk lasers(2021) Martovitsky, V. P.; Skasyrsky, Y. K.; Sviridov, D. E.; Butaev, M. R.; Kozlovskiy, V. I.; Козловский, Владимир Иванович© 2021 Elsevier B.V.CdS/ZnSe multi quantum well (MQW) heterostructures with type II band offsets for blue-green semiconductor disk lasers were grown by metalorganic vapor-phase epitaxy (MOVPE) at T = 440 °C. The blurring of heterostructure interfaces during growth is investigated. There has been observed a blueshift of the emission line of heterostructures pumped from the side released from the GaAs substrate, in comparison with the emission line under pumping from the growth surface that indicates the change in the design of QWs during growth. Simulations of experimental X-ray diffraction curves also showed that the average composition of QW changes on CdZnS/ZnCdSe. It is shown that due to the strong mutual diffusion of Cd and Zn through the interfaces, it is possible to form the two ZnSSe/ZnCdSe/ZnCdS QWs with the I-type band offsets. Nevertheless, using light-assisted spreading resistance microscopy measurements on the cleaved cross-sections of the structures, carrier separation in QWs is observed, indicating the formation of a type II band offsets in the most of our heterostructures. The grown structures show intense luminescence, the radiation spectrum of which shifts to the short-wave side with the increase of the pump level.
- ПубликацияТолько метаданныеSemiconductor laser based on a CdS/ZnSe heterostructure with longitudinal optical pumping by a laser diode(2022) Skasyrsky, Ya. K.; Butaev, M. R.; Kozlovskiy, V. I.; Козловский, Владимир Иванович© 2022 Kvantovaya Elektronika and IOP Publishing Limited.An optically pumped semiconductor laser based on a CdS/ZnSe heterostructure containing 10 coupled quantum wells is studied. The structure is grown by metalorganic vapour phase epitaxy on a GaAs substrate. A microcavity with interference dielectric mirrors is fabricated based on this structure. At room temperature under longitudinal pumping by an InGaN/GaN pulsed laser diode with a wavelength of 438 nm, the peak power of the microcavity reaches 100 mW at a wavelength of 508 nm and a pulse duration of 65 ns.
- ПубликацияТолько метаданныеSemiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown Alx Ga1- x As/Aly Ga1- y As heterostructure with optical and electron beam pumping(2022) Skasyrsky, Ya. K.; Andreev, A. Yu.; Yarotskaya, I. V.; Marmalyuk, A. A.; Butaev, M. R.; Kozlovsky, V. I.; Козловский, Владимир Иванович© 2022 Kvantovaya Elektronika and IOP Publishing Limited.A pulsed semiconductor disk laser based on the Al x Ga1 - x As/Al y Ga1 - y As structure with resonantly periodic gain and a built-in Bragg mirror emitting at a wavelength near 780 nm is studied. The laser characteristics are presented both for pumping by an electron beam and for optical pumping by laser diode radiation with a wavelength of 450 nm. Under pumping by an electron beam, a peak power of 4.4 W is achieved with a slope efficiency of over 10 %, while under optical pumping, the power is 0.2 W with a slope efficiency of 2.2 % and approximately the same cavity parameters. Possible reasons for the lower powers and efficiency under optical pumping are discussed.
- ПубликацияТолько метаданныеHigh-efficiency high-repetition-rate gain-switched operation around 3 μm in Cr 2+ :CdSe single-crystal laser pumped by fiber-laser-pumped Ho 3+ :YAG laser(2019) Antipov, O. L.; Eranov, I. D.; Frolov, M. P.; Korostelin, Y. V.; Kozlovsky, V. I.; Козловский, Владимир Иванович© 2019 Optical Society of America. We report the efficient gain-switched high-repetition-rate Cr 2 :CdSe single-crystal laser operating around 3 μm and pumped at 2.09 μm by a fiber-laser-pumped Ho 3 :YAG laser. Average power of up to 6 W with the optical-to-optical efficiency of 67% at 2.65–2.85 μm was achieved in the Cr 2 :CdSe laser with nanosecond pulses at 8 kHz repetition rate. Wavelength tunability from 2.5 μm to 3.15 μm was demonstrated using a set of cavity mirrors and an intracavity Lyot filter.
- ПубликацияТолько метаданныеStudy of a Diode-Pumped Semiconductor Disk Laser Based on a CdS/ZnSe/ZnSSe Heterostructure(2023) Butaev, M. R.; Kozlovsky, V. I.; Skasyrsky, Y. K.; Yunusova, N. R.; Козловский, Владимир Иванович