Publication: Optically pumped semiconductor laser based on a type-II CdS/ZnSe heterostructure
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2020
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© 2020 Kvantovaya Elektronika and Turpion Ltd.An optically pumped semiconductor laser based on a type-II CdS/ZnSe nanoheterostructure containing 10 quantum wells (QWs) was studied. The structure was grown by metalorganic vapour phase epitaxy on a GaAs substrate. The lifetime of electron-hole pairs at a low pump level was measured by luminescence decay to be ≈10 ns. The peak power of the microcavity semiconductor laser at room temperature and longitudinal pumping by a repetitively pulsed N2 laser was 7.2 W at a wavelength of 514 nm. The relatively low laser slope efficiency (0.35%) is explained by amplified spontaneous emission propagating along the structure. The peak power and efficiency of the laser in the case of transverse pumping increase to 70 W and 3.5%, respectively.
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Skasyrsky, Y. K. Optically pumped semiconductor laser based on a type-II CdS/ZnSe heterostructure / Skasyrsky, Y.K., Butaev, M.R., Kozlovsky, V.I. // Quantum Electronics. - 2020. - 50. - № 7. - P. 683-687. - 10.1070/QEL17245
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https://www.doi.org/10.1070/QEL17245
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https://openrepository.mephi.ru/handle/123456789/22312
https://www.scopus.com/record/display.uri?eid=2-s2.0-85090389189&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000570981300013
https://openrepository.mephi.ru/handle/123456789/22312