Publication: Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure
Дата
2019
Авторы
Andreev, A. Y.
Bagaev, T. A.
Gamov, N. A.
Zhdanova, E. V.
Butaev, M. R.
Kozlovsky, V. I.
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Аннотация
© 2019 Kvantovaya Elektronika, Turpion Ltd and IOP Publishing Ltd.We report the results of a study of an e-beam pumped vertical-external-cavity surface-emitting laser (VECSEL) based on an InGaAs/AlGaAs heterostructure. Metalorganic chemical vapour deposition (MOCVD) is employed to grow two structures of different design, which contain 10 quantum wells (QWs) and a built-in distributed Bragg reflector (DBR) mirror. Under repetitively pulsed electron-beam excitation (50 Hz, 250 ns), a peak output power of 5.5 W is achieved at a wavelength of 2.5 W and an output power of 2.5 W at 1.013 μm with a total convergence angle no larger than 20 mrad.
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Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure / Andreev, A.Y. [et al.] // Quantum Electronics. - 2019. - 49. - № 10. - P. 909-912. - 10.1070/QEL17066
URI
https://www.doi.org/10.1070/QEL17066
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https://www.scopus.com/record/display.uri?eid=2-s2.0-85076720393&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000504107000004
https://openrepository.mephi.ru/handle/123456789/19093