Персона: Гусев, Александр Сергеевич
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Study of the Processes of Mesoporous-Silicon Carbonization
© 2019, Pleiades Publishing, Ltd.Abstract: Experimental and theoretical studies of the processes of mesoporous-silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-gap semiconductors are performed. Analytical expressions for the effective diffusion factor and diffusion length of carbon atoms in a porous system are obtained. The proposed model takes into account the processes of Knudsen diffusion, coagulation and the overgrowth of pores during the formation of a silicon-carbide layer.
ЧИСЛЕННАЯ МОДЕЛЬ ВРЕМЯПРОЛЕТНОГО АНАЛИЗАТОРА ДЛЯ ПУЧКА КЛАСТЕРНЫХ ИОНОВ Ar
Polishing with cluster ions makes it possible to obtain nanorelief on various materials. Often in such installations, the ion mass distribution is not known reliably. This paper presents the results of a time-of-flight mass analyzer simulation. The time-of-flight analyzer will be used for separation of cluster ions on the Exogenesis nAccel 100 unit.
АНАЛИЗ ВЛИЯНИЯ ИОННО-КЛАСТЕРНОЙ ОБРАБОТКИ НА СОСТОЯНИЕ ПОВЕРХНОСТИ ОПТИЧЕСКОЙ СТЕКЛОКЕРАМИКИ МЕТОДОМ ФЛИККЕР- ШУМОВОЙ СПЕКТРОСКОПИИ
A method of parameterization of supersmooth surfaces used in micro- and nanoelectronics as substrates and light-reflecting elements is proposed. The method is based on the flicker-noise spectroscopy (FNS) as the general phenomenological approach to extracting information from the chaotic temporal or spatial signals. The glass-ceramic samples were processed by cluster-ion beams and their topology was investigated by atomic force microscopy before and after treatment. It is established that gas cluster ion beams processing of glass ceramics leads to angstrom-level surface roughness.
Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier
Single NV centers in diamond produced by multipulse femtosecond laser irradiation
Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer
© 2021, Pleiades Publishing, Ltd.Abstract: The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The mechanical stress distribution in 3C–SiC/Si and 3C–SiC/por-Si heterostructures is analyzed. It is shown that a porous buffer layer plays a role in the reduction of mismatch stress. The data of the theoretical study are verified by experimental residual stress in 3C–SiC/Si and 3C–SiC/por-Si samples.
МЕТОДИКА ФОРМИРОВАНИЯ СВЕРХГЛАДКИХ ПОВЕРХНОСТЕЙ СИТАЛЛА ИОННО-КЛАСТЕРНЫМИ И АТОМАРНЫМИ ПУЧКАМИ АРГОНА
Optical glass ceramics (ex. sitall) is a promising material for the elements of devices operating in a wide temperature range. However, typical methods do not allow to form a substrate with a mean-square surface roughness of less than 0.2 nm in the spatial frequency range corresponding to the scattering of incident optical radiation. To obtain super-smooth substrates of optical glass ceramics it is proposed to use the method of gas cluster ion beam (GCIB) and accelerated neutral atom beam (ANAB) processing.
Quantum Memory on 13C–13C Dimers in Diamond with NV Centers: Simulation by Quantum Chemistry Methods
Hyperfine Characteristics of Quantum Registers NV-13С in Diamond Nanocrystals Formed by Seeding Approach from Isotopic Aza-Adamantane and Methyl-Aza-Adamanthane
© 2020, Pleiades Publishing, Ltd.Abstract: We predict the characteristics of hyperfine interactions (hfi) for a number of electron-nuclear spin systems NV-13C in diamonds grown by seeding approach from the specific isotopic aza-adamantane or methyl-aza-adamantane molecules differing in 13C position in the precursor as well as in the orientation of the NV center in the post-obtained diamond. For the purpose we have used the spatial and hfi data simulated previously for the cluster C510[NV]–H252. The data obtained can be used to identify (and correlate with the precursor used) the specific NV-13C spin system by measuring the hfi-induced splitting in optically detected magnetic resonance spectra being characteristic for the NV-13C system.