Publication: Study of the Processes of Mesoporous-Silicon Carbonization
Дата
2019
Авторы
Gusev, A. S.
Kargin, N. I.
Ryndya, S. M.
Safaraliev, G. K.
Siglovaya, N. V.
Sultanov, A. O.
Timofeev, A. A.
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Аннотация
© 2019, Pleiades Publishing, Ltd.Abstract: Experimental and theoretical studies of the processes of mesoporous-silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-gap semiconductors are performed. Analytical expressions for the effective diffusion factor and diffusion length of carbon atoms in a porous system are obtained. The proposed model takes into account the processes of Knudsen diffusion, coagulation and the overgrowth of pores during the formation of a silicon-carbide layer.
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Study of the Processes of Mesoporous-Silicon Carbonization / Gusev, A.S. [et al.] // Journal of Surface Investigation. - 2019. - 13. - № 2. - P. 280-284. - 10.1134/S1027451019020083
URI
https://www.doi.org/10.1134/S1027451019020083
https://www.scopus.com/record/display.uri?eid=2-s2.0-85066147011&origin=resultslist
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https://openrepository.mephi.ru/handle/123456789/18078
https://www.scopus.com/record/display.uri?eid=2-s2.0-85066147011&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000468811200022
https://openrepository.mephi.ru/handle/123456789/18078