Персона:
Каргин, Николай Иванович

Организационные подразделения

Организационная единица

Институт нанотехнологий в электронике, спинтронике и фотонике

Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.

Статус

Проректор, директор Центра радиофотоники и СВЧ-технологий, доктор технических наук.

Фамилия

Каргин

Имя

Николай Иванович

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Теперь показываю 1 - 10 из 103

Только метаданные
Fine Tuning Phosphonate Synthesis Yields of CsPbBr3 Perovskite Nanocrystals with Enhanced Stability for Applications in Quantum Technologies
(2024) Samokhvalov, P. S.; Gusev, A. S.; Siglovaya, N. V.; Kargin, N. I.; Nabiev, I. R.; Самохвалов, Павел Сергеевич; Гусев, Александр Сергеевич; Сигловая, Наталия Владимировна; Каргин, Николай Иванович; Набиев, Игорь Руфаилович
Только метаданные
PLD Grown SiC Thin Films on Al2O3: Morphology and Structure
(2019) Kargin, N. I.; Gusev, A. S.; Ryndya, S. M.; Timofeev, A. A.; Grekhov, M. M.; Siglovaya, N. V.; Antonenko, S. V.; Каргин, Николай Иванович; Гусев, Александр Сергеевич; Рындя, Сергей Михайлович; Тимофеев, Алексей Афанасьевич; Сигловая, Наталия Владимировна; Антоненко, Сергей Васильевич
© 2019, Pleiades Publishing, Ltd.Abstract: In this paper, submicron SiC thin films are obtained on α-Al2O3 (0001) substrates from a ceramic target in vacuum by means of pulsed laser deposition. The influence of the substrate temperature on the composition, structure and surface morphology of the experimental samples is studied using scanning and transmission electron microscopy, scanning probe microscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectrometry. It is shown that at Tsub = 1000°C the heteroepitaxial growth of 3C-SiC is observed with the following preferential orientation with respect to the substrate: [0001]Al2O3||[111]SiС and [211A]Al2O3||[211]SiС, [100]Al2O3||[(Formula presented.)]SiС. The shape of the reflections from the {011} and {131} 3C–SiC planes on the electron diffraction pattern indicates the presence of local regions in the film that are rotated at angles of up to 7.5° around the growth axis. Thus, it is found that the 3C–SiC film obtained on α‑Al2O3 at a substrate temperature of 1000°C has a mosaic structure partially compensating for the mechanical stresses arising from a mismatch between the lattice parameters and thermal-expansion coefficients along the basal plane.
Только метаданные
Comparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures
(2022) Vasilkova, E. I.; Klochkov, A. N.; Vinichenko, A. N.; Kargin, N. I.; Vasil'evskii, I. S.; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич; Каргин, Николай Иванович; Васильевский, Иван Сергеевич
The effect of 5 min high-temperature thermal annealing on InGaAs/GaAs strained superlattices and InGaAs/ AlGaAs PHEMT structures grown by molecular beam epitaxy was studied using the Hall measurements, pho-toluminescence spectroscopy, and high-resolution X-ray diffraction. InGaAs/GaAs superlattices are shown to undergo photoluminescence peak energy blueshift after 700 degrees C annealing and distinguishable heterointerface roughening after 800 degrees C annealing. The magnitude of quantum well smoothing, caused by annealing induced III-group atom interdiffusion, was estimated experimentally using secondary ion mass spectrometry and X-ray reflectivity, and calculated from the modelled electron energy spectra in the diffused wells. InGaAs/AlGaAs PHEMTs appear to be more sensitive to annealing, demonstrating optical and structural changes of a similar nature to InGaAs/GaAs heterostructures, as well as transport properties degradation, at a wider range of annealing temperatures starting 500 degrees C.
Только метаданные
Optically Detectable Magnetic Resonance of NV-Center Ensembles in CVD Diamond with Different 13C Contents
(2024) Salkazanov, A.T.; Gusev, A.S.; Kaloshin, M.M.; Sauri, A.D.; Zharikov, A.M.; Nizovtsev, A.P.; Kilin, S.Ya.; Kargin, N.I.; Ryzhuk, R.V.; Салказанов, Александр Тотразович; Гусев, Александр Сергеевич; Калошин, Михаил Михайлович; Саури, Антон Давидович; Жариков, Александр Михайлович; Низовцев, Александр Павлович; Килин, Сергей Яковлевич; Каргин, Николай Иванович; Рыжук, Роман Валериевич
Открытый доступ
ЧИСЛЕННАЯ МОДЕЛЬ ВРЕМЯПРОЛЕТНОГО АНАЛИЗАТОРА ДЛЯ ПУЧКА КЛАСТЕРНЫХ ИОНОВ Ar
(НИЯУ МИФИ, 2019) Бакун, А. Д.; Гусев, А. С.; Каргин, Н. И.; Колодко, Д. В.; Рындя, С. М.; Сигловая, Н. В.; Агейченков, Д. Г.; Гусев, Александр Сергеевич; Колодко, Добрыня Вячеславич; Рындя, Сергей Михайлович; Каргин, Николай Иванович; Бакун, Алексей Дмитриевич; Сигловая, Наталия Владимировна
Polishing with cluster ions makes it possible to obtain nanorelief on various materials. Often in such installations, the ion mass distribution is not known reliably. This paper presents the results of a time-of-flight mass analyzer simulation. The time-of-flight analyzer will be used for separation of cluster ions on the Exogenesis nAccel 100 unit.
Только метаданные
Measurements of production and inelastic cross sections for p plus C, p plus Be, and p + Al at 60 GeV/c and p plus C and p + Be at 120 GeV/c
(2019) Aduszkiewicz, A.; Andronov, E. V.; Anticic, T.; Babkin, V.; Brandin, A. V.; Golosov, O.; Kargin, N.; Kashirin, E.; Morozov, S.; Selyuzhenkov, I.; Strikhanov, M.; Taranenko, A.; Брандин, Андрей Владимирович; Голосов, Олег Владимирович; Каргин, Николай Иванович; Стриханов, Михаил Николаевич; Тараненко, Аркадий Владимирович
This paper presents measurements of production cross sections and inelastic cross sections for the following reactions: 60 GeV/c protons with C, Be, Al targets and 120 GeV/c protons with C and Be targets. The analysis is performed using the NA61/SHINE spectrometer at the CERN Super Proton Synchrotron. First measurements are obtained using protons at 120 GeV/c, while the results for protons at 60 GeV/c are compared with previously published measurements. These interaction cross section measurements are critical inputs for neutrino flux prediction in current and future accelerator-based long-baseline neutrino experiments.
Только метаданные
Pulsed laser deposition in He-N2 gaseous mixtures for the synthesis of photoluminescent Si and Ge nanoparticles for bioimaging
(2023) Fronya, A. A.; Karpov, N. V.; Antonenko, S. V.; Pokryshkin, N. S.; Eremina, A. S.; Kharin, A.; Garmash, A. A.; Kargin, N. I.; Klimentov, S. M.; Фроня, Анастасия Андреевна; Антоненко, Сергей Васильевич; Еремина, Анна Сергеевна; Гармаш, Александр Александрович; Каргин, Николай Иванович; Климентов, Сергей Михайлович
Только метаданные
K∗(892) meson production in inelastic p+p interactions at 40 and 80 GeV/c beam momenta measured by NA61/SHINE at the CERN SPS
(2022) Acharya, A.; Adhikary, H.; Allison, K. K.; Amin, N.; Brandin, A.; Golosov, O.; Kargin, N.; Kashirin, E.; Selyuzhenkov, I.; Strikhanov, M.; Taranenko, A.; Брандин, Андрей Владимирович; Голосов, Олег Владимирович; Каргин, Николай Иванович; Стриханов, Михаил Николаевич; Тараненко, Аркадий Владимирович
© 2022, The Author(s).Measurements of K∗(892) resonance production via its K+π- decay mode in inelastic p+p collisions at beam momenta 40 and 80 GeV/c (sNN=8.8 and 12.3 GeV) are presented. The data were recorded by the NA61/SHINE hadron spectrometer at the CERN Super Proton Synchrotron. The template method was used to extract the K∗(892) signal. Transverse momentum and rapidity spectra were obtained. The mean multiplicities of K∗(892) mesons were found to be (35.1 ± 1.3 (stat) ± 3.6 (sys)) · 10 - 3 at 40 GeV/c and (58.3 ± 1.9 (stat) ± 4.9 (sys)) · 10 - 3 at 80 GeV/c. The NA61/SHINE results are compared with the Epos1.99 and Hadron Resonance Gas models as well as with world data. The transverse mass spectra of K∗(892) mesons and other particles previously reported by NA61/SHINE were fitted within the Blast-Wave model. The transverse flow velocities are close to 0.1–0.2 of the speed of light and are significantly smaller than the ones determined in heavy nucleus-nucleus interactions at the same beam momenta.
Только метаданные
Open charm measurements in NA61/SHINE at CERN SPS
(2019) Staszel, P.; Aduszkiewicz, A.; Andronov, E. V.; Anticic, T.; Brandin, A. V.; Golosov, O.; Kargin, N.; Kashirin, E.; Morozov, S.; Strikhanov, M.; Taranenko, A.; Брандин, Андрей Владимирович; Голосов, Олег Владимирович; Каргин, Николай Иванович; Стриханов, Михаил Николаевич; Тараненко, Аркадий Владимирович
The measurements of open charm production was proposed as an important tool to investigate the properties of the hot and dense matter formed in nucleus-nucleus collisions as well as to provide the means for model independent interpretation of the existing data on J/Psi suppression. Recently, the experimental setup of the NA61/SHINE experiment was supplemented with a Vertex Detector which was motivated by the importance and the possibility of the first direct measurements of open charm meson production in heavy ion collisions at SPS energies. First test data taken in December 2016 on Pb+Pb collisions at 150A GeV/c allowed to validate the general concept of D-0 meson detection via its D-0 -> pi(+) + K- decay channel and delivered a first indication of open charm production. The physics motivation of open charm measurements at SPS energies, pilot results on open charm production, and finally, the future plans of open charm measurements in the NA61/SHINE experiment after LS2 are presented.
Только метаданные
Sol-Gel Fabrication and Luminescence Properties of Multilayer Eu-Doped BaTiO3-SiO2 Xerogel Nanostructures
(2019) Karnilava, Yu. D.; Kholov, P. A.; Raichenok, T. F.; Tikhomirov, S. A.; Gaponenko, N. V.; Martynov, I. L.; Osipov, E. V.; Chistyakov, A. A.; Kargin, N. I.; Гапоненко, Николай Васильевич; Мартынов, Игорь Леонидович; Осипов, Евгений Валерьевич; Чистяков, Александр Александрович; Каргин, Николай Иванович
With the use of sol-gel method BaTiO3-SiO2 multilayer structures were fabricated on glass or fused silica substrates employing dipping or spinning procedure. The photonic stop band was observed in the reflection and transmission spectra of the multilayer structure annealed at 450 degrees C. It is redshifted with an increase of the thicknesses of BaTiO3 and SiO2 layers. For structures comprising Eu-doped BaTiO3 layers of different thicknesses photoluminescence with the main band at 614 nm was detected. It is characterized with the double-exponential decay with the lifetimes of about 0.5 ms and 1.1 ms which do not depend significantly on the photonic stop band position.