2024, Gusev, A. S., Sultanov, A. O., Katkov, A. V., Ryndya, S. M., Siglovaya, N. V., Klochkov, A. N., Ryzhuk, R. V., Kargin, N. I., Borisenko, D. P., Гусев, Александр Сергеевич, Султанов, Азрет Оюсович, Катков, Андрей Викторович, Рындя, Сергей Михайлович, Сигловая, Наталия Владимировна, Клочков, Алексей Николаевич, Рыжук, Роман Валериевич, Каргин, Николай Иванович, Борисенко, Денис Петрович

2019, Бакун, А. Д., Гусев, А. С., Каргин, Н. И., Рындя, С. М., Сигловая, Н. В., Бакун, Алексей Дмитриевич, Каргин, Николай Иванович, Гусев, Александр Сергеевич, Рындя, Сергей Михайлович, Сигловая, Наталия Владимировна

Optical glass ceramics (ex. sitall) is a promising material for the elements of devices operating in a wide temperature range. However, typical methods do not allow to form a substrate with a mean-square surface roughness of less than 0.2 nm in the spatial frequency range corresponding to the scattering of incident optical radiation. To obtain super-smooth substrates of optical glass ceramics it is proposed to use the method of gas cluster ion beam (GCIB) and accelerated neutral atom beam (ANAB) processing.

2019, Kargin, N. I., Gusev, A. S., Ryndya, S. M., Timofeev, A. A., Grekhov, M. M., Siglovaya, N. V., Antonenko, S. V., Каргин, Николай Иванович, Гусев, Александр Сергеевич, Рындя, Сергей Михайлович, Тимофеев, Алексей Афанасьевич, Сигловая, Наталия Владимировна, Антоненко, Сергей Васильевич

© 2019, Pleiades Publishing, Ltd.Abstract: In this paper, submicron SiC thin films are obtained on α-Al2O3 (0001) substrates from a ceramic target in vacuum by means of pulsed laser deposition. The influence of the substrate temperature on the composition, structure and surface morphology of the experimental samples is studied using scanning and transmission electron microscopy, scanning probe microscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectrometry. It is shown that at Tsub = 1000°C the heteroepitaxial growth of 3C-SiC is observed with the following preferential orientation with respect to the substrate: [0001]Al2O3||[111]SiС and [211A]Al2O3||[211]SiС, [100]Al2O3||[(Formula presented.)]SiС. The shape of the reflections from the {011} and {131} 3C–SiC planes on the electron diffraction pattern indicates the presence of local regions in the film that are rotated at angles of up to 7.5° around the growth axis. Thus, it is found that the 3C–SiC film obtained on α‑Al2O3 at a substrate temperature of 1000°C has a mosaic structure partially compensating for the mechanical stresses arising from a mismatch between the lattice parameters and thermal-expansion coefficients along the basal plane.

2020, Bakun, A. D., Gusev, A. S., Kargin, N. I., Ryndya, S. M., Siglovaya, N. V., Бакун, Алексей Дмитриевич, Гусев, Александр Сергеевич, Каргин, Николай Иванович, Рындя, Сергей Михайлович, Сигловая, Наталия Владимировна

© 2020 Elsevier B.V.Optical glass–ceramic is a promising material for the elements of precision optical systems operating in a wide temperature range. However, conventional methods such as the chemical–mechanical or ion polishing do not allow to form a substrate surface with less than 0.2 nm root mean square roughness. The method of gas cluster ion beam (GCIB) and accelerated neutral atom beam (ANAB) processing of glass–ceramic substrates is proposed to obtain super-smooth optical surfaces. The experimental samples were characterized by atomic force microscopy and X-ray diffractometry. It is shown that the surface is modified with the disappearance of linear defects (scratches) and the roughness parameters are improved. Only residual chaotic relief with the average roughness value (Ra) of 0.2 – 0.3 nm is observed after GCIB treatment. Subsequent ANAB processing allows to decrease the Ra parameter down to 0.15 nm. The improvement of surface characteristics is confirmed by the analysis of PSD-function in the investigated range of spatial frequencies. As a result of this work the method for super-smooth optical substrates fabrication was developed and the characteristics of obtained surfaces were investigated.

2019, Gusev, A. S., Kargin, N. I., Ryndya, S. M., Safaraliev, G. K., Siglovaya, N. V., Sultanov, A. O., Timofeev, A. A., Гусев, Александр Сергеевич, Каргин, Николай Иванович, Рындя, Сергей Михайлович, Сафаралиев, Гаджимет Керимович, Сигловая, Наталия Владимировна, Султанов, Азрет Оюсович, Тимофеев, Алексей Афанасьевич

© 2019, Pleiades Publishing, Ltd.Abstract: Experimental and theoretical studies of the processes of mesoporous-silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-gap semiconductors are performed. Analytical expressions for the effective diffusion factor and diffusion length of carbon atoms in a porous system are obtained. The proposed model takes into account the processes of Knudsen diffusion, coagulation and the overgrowth of pores during the formation of a silicon-carbide layer.

2021, Gusev, A. S., Kargin, N. I., Ryndya, S. M., Safaraliev, G. K., Siglovaya, N. V., Smirnova, M. O., Solomatin, I. O., Sultanov, A. O., Timofeev, A. A., Гусев, Александр Сергеевич, Каргин, Николай Иванович, Рындя, Сергей Михайлович, Сафаралиев, Гаджимет Керимович, Сигловая, Наталия Владимировна, Смирнова, Марина Олеговна, Султанов, Азрет Оюсович, Тимофеев, Алексей Афанасьевич

© 2021, Pleiades Publishing, Ltd.Abstract: The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The mechanical stress distribution in 3C–SiC/Si and 3C–SiC/por-Si heterostructures is analyzed. It is shown that a porous buffer layer plays a role in the reduction of mismatch stress. The data of the theoretical study are verified by experimental residual stress in 3C–SiC/Si and 3C–SiC/por-Si samples.

2019, Бакун, А. Д., Гусев, А. С., Каргин, Н. И., Колодко, Д. В., Рындя, С. М., Сигловая, Н. В., Агейченков, Д. Г., Гусев, Александр Сергеевич, Колодко, Добрыня Вячеславич, Рындя, Сергей Михайлович, Каргин, Николай Иванович, Бакун, Алексей Дмитриевич, Сигловая, Наталия Владимировна

Polishing with cluster ions makes it possible to obtain nanorelief on various materials. Often in such installations, the ion mass distribution is not known reliably. This paper presents the results of a time-of-flight mass analyzer simulation. The time-of-flight analyzer will be used for separation of cluster ions on the Exogenesis nAccel 100 unit.

2019, Parhaeva, A. P., Bulycheva, E. S., Kadochnikov, D. I., Kulieva, M. A., Losevskaya, E. G., Sharapova, O. E., Shuvalova, E. A., Maslovskaya, E. V., Sosin, D. V., Shaltaeva, Y. R., Sultanov, A. O., Siglovaya, N. V., Shostachenko, S. A., Масловская, Елена Владимировна, Сосин, Дмитрий Витальевич, Шалтаева, Юлия Ринатовна, Султанов, Азрет Оюсович, Сигловая, Наталия Владимировна

© 2019 Published under licence by IOP Publishing Ltd. The article is devoted to one of the directions of alternative energy - the creation and use of microbial fuel cell (MFC). It is used anode made of plate of macro porous silicon doped with antimony. The cathode is a plate of shungite rock. Shungite is a natural stone containing fullerenes. The possibility of functioning and effective operation of this system is investigated.

2019, Mikhalik, M. M., Avramchuk, A. V., Komissarov, I. V., Yu, Fominski, V., Romanov, R. I., Sultanov, A. O., Siglovaya, N. V., Ryndya, S. M., Gusev, A. S., Labunov, V. A., Kargin, N. I., Фоминский, Вячеслав Юрьевич, Романов, Роман Иванович, Султанов, Азрет Оюсович, Сигловая, Наталия Владимировна, Рындя, Сергей Михайлович, Гусев, Александр Сергеевич, Лабунов, Владимир, Каргин, Николай Иванович

© Published under licence by IOP Publishing Ltd. In this work, we try to suite an approach, which concerns of epitaxial graphene growth by laser irradiation of 3C-SiC (111) film deposited on silicon substrate (111) by chemical vapor deposition method. Laser treatment was performed by pulsed 1064 nm laser with 20 Hz repetition rate and 15 ns pulse duration, the fluency was varied 0-1.5 J/cm 2 . Raman spectroscopy studies show that for fluence above 0.8 J/cm 2 2D band is noticeable revealing formation of high crystallographic quality graphitic (graphene) film.