2019, Bakerenkov, A., Pershenkov, V., Felitsyn, V., Rodin, A., Telets, V., Belyakov, V., Zhukov, A., Glukhov, N., Бакеренков, Александр Сергеевич, Родин, Александр Сергеевич, Телец, Виталий Арсеньевич, Беляков, Владимир Васильевич, Жуков, Александр Иванович

© 2019 IEEE.It was demonstrated experimentally that in ELDRS-susceptible operational amplifiers elevated temperature irradiation increases degradation rate of input bias current, while in ELDRS-free devices degradation rates at room and elevated temperatures are approximately equal.

2021, Aleksandrova, D. A., Melamed, T. B., Baberkina, E. P., Fenin, A. A., Shaltaeva, Y. R., Belyakov, V. V., Шалтаева, Юлия Ринатовна, Беляков, Владимир Васильевич

© D.A. Aleksandrova, T.B. Melamed, E.P. Baberkina, A.A. Fenin, E.S. Osinova, A.E. Kovalenko, R.V. Yakushin, Yu.R. Shaltaeva, V.V. Belyakov, D.I. Zykova, 2021.Objectives. To determine the ion mobility of N-methylimidazole, establish the structure of ions corresponding to characteristic signals, and determine the detection limit of N-methylimidazole on the ion-drift detector Kerber. Methods. Ion mobility spectrometry was used to study the ionization processes. The enthalpies of the reactions of monomer and dimer ions were calculated in the ORCA 4.1.1 software by the B3LYP density functional method with a set of basic functions 6-31G (d, p). Results. The drift time and ion mobility values of N-methylimidazole were determined. A method for mathematical processing of spectra and a program for its implementation was developed. The changing peculiarities of the ion mobility spectrum during measurement at a given time were studied. According to the interpretation of the spectrum signals, the structure of the generated ions was proposed, and the enthalpies of ion formation were determined. Conclusions. The characteristic signal of the N-methylimidazole ion protonated at the nitrogen atom of the pyridine type was revealed. It was found that two signals in the ion mobility spectra of N-methylimidazole correspond to the presence of the monomer and dimer ions. The detection limit of N-methylimidazole on the ion-drift detector Kerber was determined, amounting to 3 pg.

2020, Pershenkov, V. S., Bakerenkov, A. S., Rodin, A. S., Felitsyn, V. A., Zhukov, A. I., Telets, V. A., Belyakov, V. V., Бакеренков, Александр Сергеевич, Родин, Александр Сергеевич, Жуков, Александр Иванович, Телец, Виталий Арсеньевич, Беляков, Владимир Васильевич

Possible physical mechanism of enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate sensitivity (RLDRS) in bipolar devices is described. Modification of the low dose rate conversion model is presented. The enhanced or reduced sensitivity can be connected with a specific position of the effective Fermi level relatively acceptor and donor radiation-induced interface traps. The qualitative and quantitative analysis of the low dose rate effects is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge were taken into account. It leads to dependence of the accumulation of radiation-induced oxide charge and interface traps on the dose rate. In enhancement version the ELDRS and RLDRS conversion model describes the low dose rate effect in as "true" dose rate effect.

2019, Pershenkov, V., Bakerenkov, A., Rodin, A., Felitsyn, V., Telets, V., Belyakov, V., Бакеренков, Александр Сергеевич, Родин, Александр Сергеевич, Телец, Виталий Арсеньевич, Беляков, Владимир Васильевич

© 2019 IEEE.Possible physical mechanism of reduced low dose rate sensitivity in bipolar devices is described. The reduced sensitivity can be connected with a specific position of effective Fermi level relatively acceptor and donor radiation-induced interface traps.

2020, Shaltaeva, Y. R., Golovin, A. V., Vasilyev, V. K., Gromov, E. A., Matusko, M. A., Malkin, E. K., Ivanov, I. A., Belyakov, V. V., Pershenkov, V. S., Шалтаева, Юлия Ринатовна, Малкин, Евгений Константинович, Иванов, Игорь Александрович, Беляков, Владимир Васильевич

© Springer Nature Switzerland AG 2020.New algorithms were developed to control the drift region heaters and the gas pumps of ion mobility spectrometer. The efficiency of substances detection was increased. Control algorithm block heaters can improve the accuracy of temperature stabilization in terms of the significant events of the time constants of thermal circuits and high heat capacity elements of the drift region. The improved control algorithm of a block of gas pumps minimizes the duration of the transition process when changing the predetermined level of the engine speed over a wide range. The study and optimization of control algorithms for heaters of the drift region and the gas pump ion mobility spectrometry.

2020, Pershenkov, V. S., Bakerenkov, A. S., Telets, V. A., Belyakov, V. V., Felitsyn, V. A., Rodin, A. S., Бакеренков, Александр Сергеевич, Телец, Виталий Арсеньевич, Беляков, Владимир Васильевич, Родин, Александр Сергеевич

© Springer Nature Switzerland AG 2020.Modification of the ELDRS (Enhanced Low Dose Rate Sensitivity) conversion model is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge takes into account. It leads to dependence of the accumulation of radiation-induced oxide charge and interface traps on the dose rate. In enhancement version the ELDRS conversion model describes the low dose rate effect as “true” dose rate effect.

2019, Felitsyn, V. A., Bakerenkov, A. S., Zhukov, A. I., Butuzov, V. A., Bocharov, Y. I., Pershenkov, V. S., Rodin, A. S., Telets, V. A., Belyakov, V. V., Бакеренков, Александр Сергеевич, Жуков, Александр Иванович, Бутузов, Владимир Алексеевич, Бочаров, Юрий Иванович, Родин, Александр Сергеевич, Телец, Виталий Арсеньевич, Беляков, Владимир Васильевич

© 2019 IEEE.Radiation hardened ADC with automatic offset voltage compensation was developed. TID radiation effect in the ADC was investigated at different temperatures. The designed ADC devices demonstrate high radiation hardness. Up to total dose level 100 krad(Si) any significant radiation induced drift didn't observed in transfer characteristics of all irradiated devices. It is achieved by using techniques such as application of automatic offset voltage compensation circuit together with enclosed layout transistors (ELT), located in ADC control logic. Also, edge-less n-channel MOSFETs with additional guard rings were used to increase the radiation hardness of digital interface and control logic of ADC. In contrast with control logic ELT not used in interface logic. Thus significant degradation of digital interface power supply current was observed unlike control logic power supply. Developed device can be considered as a good technical decision for self-diagnostic systems of electronic devices proposed for application under ionizing radiation impact, especially for systems of spacecrafts and satellites.

2019, Bykova, A. A., Malinovskaya, L. K., Chomakhidze, P. Sh., Trushina, O. V., Shaltaeva, Y. R., Belyakov, V. V., Golovin, A. V., Pershenkov, V. S., Шалтаева, Юлия Ринатовна, Беляков, Владимир Васильевич

© 2019 Media Sphera Publishing Group. All rights reserved.Exhaled breath analysis is a novel tool for diagnostics of different diseases. Taking into account the secretory function of the lungs, the composition of exhaled breath is different in physiological and pathological conditions. In this review we consider of some substances which content vary in cardiovascular diseases – pentane, isoprene, carbon monoxide and trimethylamine. Modern technologies allow to move the analysis of exhaled breath from research laboratories into clinical practice. Thus, a new tool for real time of screening various cardiovascular diseases has appeared in the arsenal of physicians.

2021, Pershenkov, V. S., Felitsyn, V. A., Bakerenkov, A. S., Rodin, A. S., Telets, V. A., Belyakov, V. V., Kovsharov, I. D., Zhukov, A. I., Бакеренков, Александр Сергеевич, Родин, Александр Сергеевич, Телец, Виталий Арсеньевич, Беляков, Владимир Васильевич, Ковшаров, Илья Дмитриевич, Жуков, Александр Иванович

© 2021 IEEE.A possible influence of location of the effective Fermi level in the forbidden gap of the surface base region on dose rate sensitivity of bipolar integrated circuits was described. Also, it is shown, that the position of the effective Fermi level leads to different behavior of bipolar devices during post-irradiation annealing at enhanced temperature. Experimental tests on dose rate sensitive devices were provided and discussed.

2019, Bakerenkov, A., Pershenkov, V., Felitsyn, V., Rodin, A., Telets, V., Belyakov, V., Zhukov, A., Glukhov, N., Бакеренков, Александр Сергеевич, Родин, Александр Сергеевич, Телец, Виталий Арсеньевич, Беляков, Владимир Васильевич, Жуков, Александр Иванович

© 2019 IEEE.Radiation degradation rate of input offset voltage in bipolar operational amplifiers was estimated experimentally. High degradation rate was observed in devices with high input offset voltage initial values and temperature drifts. Obtained results were discussed.