Персона:
Васильевский, Иван Сергеевич

Научные группы

Научная группа

Организационные подразделения

Организационная единица

Институт нанотехнологий в электронике, спинтронике и фотонике

Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.

Фамилия

Васильевский

Имя

Иван Сергеевич

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Теперь показываю 1 - 10 из 64

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Influence of nanosecond laser irradiation on the structure and conductivity of BCx films
(2019) Zinin, P. V.; Filonenko, V. P.; Troyan, I. A.; Bulatov, K. M.; Romanov, R. I.; Fominski, V. Y.; Vasil'Evskii, I. S.; Safonov, D. A.; Fominski, D. V.; Soloviev, A. A.; Романов, Роман Иванович; Фоминский, Вячеслав Юрьевич; Васильевский, Иван Сергеевич; Сафонов, Данил Андреевич; Фоминский, Дмитрий Вячеславович; Соловьев, Алексей
© Published under licence by IOP Publishing Ltd.Thin-film precursors of BCx were formed by pulsed laser codeposition of boron and carbon. Targets made of pressed boron and carbon powders with an equal element content (B/C = 1/1) and an increased carbon content (B/C = 1/3) were used. The films were deposited on sapphire substrates at elevated temperature (700C) which determined the initial properties of the precursor BCx films. Irradiation of the films was carried out by laser pulses of nanosecond duration with varying intensity. The films obtained by laser annealing of BCx (Q-BCx) were studied by scanning electron microscopy and micro-Raman spectroscopy. Irradiation under optimal conditions made allowed to realize pulsed melting of the films and partial preservation of their continuity on the substrate. The local structure of Q-BCx films and the nature of the changes in their electrophysical properties depended on the composition of the precursor films and the laser irradiation regimes.
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Thermal degradation of metamorphic HEMT InAlAs/InGaAs/InAlAs grown on GaAs substrates
(2019) Vinichenko, A. N.; Ermakov, S. S.; Kargin, N. I.; Vasil'Evskii, I. S.; Виниченко, Александр Николаевич; Каргин, Николай Иванович; Васильевский, Иван Сергеевич
© Published under licence by IOP Publishing Ltd.termal annealing effect on electron transport properties of MHEMT nanostructures is studied for inhert and atmospheric conditions. Iti is revealed that surface modification is mainly responsible for changes in electron properties rather than dislocation sliding and threading into active layers.
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Contact Potential Difference in the Absence of a Current through a Sample in the Quantum Hall Effect Regime in InGaAs/InAlAs Heterostructure
(2024) Gudina, S. V.; Neverov, V. N.; Turutkin, K. V.; Vasil'evskii, I. S.; Vinichenko, A. N.; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич
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Effect of Different De-Embedding Techniques on Small-Signal Parameters of X-Band Low-Noise Amplifier
(2021) Popov, A. A.; Dobush, I. M.; Metel, A. A.; Bilevich, D. V.; Vasil'evskii, I. S.; Васильевский, Иван Сергеевич
© 2021 IEEE.In most cases researchers consider existing de-embedding techniques in terms of characterization accuracy of the monolithic microwave integrated circuit component where an emphasis is put on the upper limit of the frequency range. In real practice, when faced with a choice of the de-embedding technique, one must take into account a number of additional factors, such as target application field of the component, manufacturing capabilities and production costs. In this paper we compare existing de-embedding techniques in the context of GaAs pHEMT-based two-stage low-noise amplifier monolithic microwave integrated circuit design. Firstly, we analyze several de-embedding techniques valid for pHEMTs with both coplanar and microstrip accesses and outline differences in de-embedded active bias S-parameters. Then, for each of the considered de-embedding technique we estimated the overall effect on low-noise amplifier small-signal characteristics, the total wafer area occupied by various de-embedding structures and flexibility of a technique regarding characterization of several active and passive devices with different pad distance and feed line length located on the same wafer.
Только метаданные
Development of a 0.15 μm gaas phemt process design kit for low‐noise applications
(2021) Dobush, I. M.; Zykov, D. D.; Bragin, D. S.; Salnikov, A. S.; Vasil'evskii, I. S.; Gorelov, A. A.; Kargin, N. I.; Васильевский, Иван Сергеевич; Горелов, Андрей Алексеевич; Каргин, Николай Иванович
© 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/license s/by/4.0/).This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low‐noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa‐resistors, capacitors, inductors, and transistors. The developed PDK can be used in technology transfer or education.
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Electron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit
(2021) Safonov, D. A.; Klochkov, A. N.; Vinichenko, A.; Sibirmovsky, Y. D.; Kargin, N. I.; Vasil'evskii, I. S.; Сафонов, Данил Андреевич; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич; Сибирмовский, Юрий Дмитриевич; Каргин, Николай Иванович; Васильевский, Иван Сергеевич
© 2021The dependence of electron transport properties of two-dimensional electron gas on sheet doping concentration in one-sided δ-doped pseudomorphic AlxGa1-xAs/In0.2Ga0.8As/GaAs quantum wells is investigated. The wide range of silicon dopant sheet concentrations of (1.6–16) · 1012 cm−2 is investigated. Electron effective masses, nonparabolicity and scattering times are determined by low-temperature Shubnikov-de Haas effect measurements. The dependence of the quantum and transport relaxation times on nH is shown to have nonmonotonic character due to the competition of the Fermi momentum increase and the large angle scattering due to the variation of ionized donor concentration. The nonparabolicity coefficient in the In0.2Ga0.8As quantum well is determined to be 0.68 1/eV.
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Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains
(2021) Altukhov, I. V.; Dizhur, S. E.; Kagan, M. S.; Khvalkovskiy, N. A.; Vasil'evskii, I. S.; Vinichenko, A. N.; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич
© 2021, Pleiades Publishing, Inc.Abstract—: The strong effect of weak interband illumination on tunneling transport in doped GaAs/AlAs superlattices was found under conditions of electric domain formation. The photoresponse at voltages below the threshold one (before the domain formation) did not observe. The phenomenon is referred to strong carrier depletion inside the triangular high-field domain. The domain modes transformations under the illumination were also found.
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Direct epitaxial integration of the ferromagnetic oxide EuO with GaAs
(2024) Averyanov,D.V.; Sokolov,I.S.; Taldenkov,A.N.; Vinichenko,A.N.; Vasil'evskii,I.S.; Виниченко, Александр Николаевич; Васильевский, Иван Сергеевич
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Modelling of Quantum-confined Stark Effect in III-V Heterostructures for Electro-optic Modulator Applications
(2019) Sibirmovsky, Y. D.; Kargin, N. I.; Vasil'evskii, I. S.; Сибирмовский, Юрий Дмитриевич; Каргин, Николай Иванович; Васильевский, Иван Сергеевич
© 2019 IEEE.The problem of modelling the absorption coefficient and refractive index spectra of III-V heterostructures with multiple quantum wells and superlattices under applied electric field is considered. This is a crucial step in the design of efficient and compact electro-optic modulators. The goal of this work is to find a simple, fast and reliable method to qualitatively compare various heterostructure designs. Which is why two-band effective mass approximation is used here. The paper contains comparison of existing methods as well as some new results.
Открытый доступ
ИСПОЛЬЗОВАНИЕ МЕТАМОРФНОГО БУФЕРА ДЛЯ ПОЛУЧЕНИЯ НЕМТ НАНОГЕТЕРОСТРУКТУР С РАЗЛИЧНЫМ СОДЕРЖАНИЕМ InAs В АКТИВНОЙ ОБЛАСТИ НА ПОДЛОЖКАХ GaAs И InP
(НИЯУ МИФИ, 2011) Галиев, Г. Б.; Васильевский, И. С.; Климов, Е. А.; Пушкарев, С. С.; Рубан, О. А.; Васильевский, Иван Сергеевич