Персона: Никифоров, Александр Юрьевич
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Александр Юрьевич
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- ПубликацияТолько метаданныеNonparametric Statistical Analysis of Radiation Hardness Threshold Variation in CMOS IC Wafer Lots Series with the Aim of Process Monitoring(2019) Moskovskaya, Y. M.; Sogojan, A. V.; Nikiforov, A. Y.; Bogdanov, Y. I.; Bogdanova, N. A.; Fastovets, D. V.; Moskovskaya, Y. M.; Sogoyan, A. V.; Nikiforov, A. Y.; Московская, Юлия Марковна; Согоян, Армен Вагоевич; Никифоров, Александр Юрьевич© 2019 IEEE.Nonparametric statistical criteria usage has been considered for estimating radiation hardness threshold variation of CMOS IC wafer lots series. It gives one the possibility to assess every newly manufactured IC lot by a small sample size to determine whether test sample and the whole lot statistically belong to the previously tested general reference group of samples or not. The approach allows us to minimize the overirradiation factor and obtain a statistically reliable radiation test result even for small-size test samples.
- ПубликацияТолько метаданныеComparative Assessment of Digital and UHF Optoelectronic Transceivers Radiation Hardness(2019) Mozhaev, R. K.; Cherniak, M. E.; Pechenkin, A. A.; Ulanova, A. V.; Nikiforov, A. Y.; Можаев, Роман Константинович; Печенкин, Александр Александрович; Уланова, Анастасия Владиславовна; Никифоров, Александр Юрьевич© 2019 IEEE.A method for radiation hardness evaluation of digital and microwave transmitting-receiving optoelectronic modules is presented. The technical aspects of parameters monitoring during exposure are described. The most vulnerable components of optoelectronic modules are identified.
- ПубликацияТолько метаданныеMicrocontroller's Sensitivity to Voltage Pulse Series in Comparison with a Single Voltage Pulse(2019) Shemonaev, A. N.; Epifantsev, K. A.; Skorobogatov, P. K.; Nikiforov, A. Y.; Шемонаев, Александр Николаевич; Епифанцев, Константин Алексеевич; Скоробогатов, Петр Константинович; Никифоров, Александр Юрьевич© 2019 IEEE.The paper presents the results of ARM 32-bit Cortex-M0 and M4 CMOS microcontroller's sensitivity to a series of voltage pulses in comparison to a single pulse-all with damage subthreshold energy. The effect of pulses amount on the device voltage overstress threshold value was found and analyzed.
- ПубликацияТолько метаданныеProton Accelerator's Direct Ionization Single Event Upset Test Procedure(2019) Akhmetov, A. O.; Sorokoumov, G. S.; Smolin, A. A.; Bobrovsky, D. V.; Boychenko, D. V.; Nikiforov, A. Y.; Сорокоумов, Георгий Сергеевич; Бобровский, Дмитрий Владимирович; Бойченко, Дмитрий Владимирович; Никифоров, Александр Юрьевич© 2019 IEEE.The paper presents single event upset (SEU) experimental results in Spartan-6 FPGA due to direct and indirect proton ionization. High energy proton beam and aluminum foils were used to decrease proton energy down to 1.. 20 MeV to observe proton direct ionization upsets.
- ПубликацияТолько метаданныеSoftware and Hardware System for Charge Coupled Devices with Interline Transfer of Charge Parameters Monitoring during Radiation Tests(2019) Lukashin, V. P.; Cherniak, M. E.; Akhmetov, A. O.; Nikiforov, A. Y.; Ulanova, A. V.; Лукашин, Владислав Павлович; Никифоров, Александр Юрьевич; Уланова, Анастасия Владиславовна© 2019 IEEE.The paper presents a method of device monitoring during radiation testing for charge coupled devices with interline transfer (hereinafter-CCD). The results of heavy ions, dose rate and total ionizing dose tests are presented together with the description of the developed software and hardware set-up based on the National Instruments platform and on the designed specialized equipment adapted for radiation tests.
- ПубликацияТолько метаданныеSmart Sub-Microelectronics Radiation Behavior Trends and Test Facilities Evolution(2021) Nikiforov, A. Y.; Gorbunov, M. S.; Smolin, A. A.; Davydov, G. G.; Boychenko, D. V.; Никифоров, Александр Юрьевич; Давыдов, Георгий Георгиевич; Бойченко, Дмитрий Владимирович© 2021 IEEE.We provide a brief evolution trends overview of the modern microelectronic devices and its radiation behaviour, focusing on new structures and materials effects due to Total Ionizing Dose (TID) and Single Event effects (SEE) in CMOS elements. Evolution of test facilities driven by these changes in radiation behaviour of modern devices is also considered.
- ПубликацияТолько метаданныеEvaluation of Organic Light-Emitting Diodes Total Ionizing Dose Sensitivity in Temperature Range(2021) Mozhaev, R. K.; Pechenkin, A. A.; Ukolov, D. S.; Ulanova, A. V.; Nikiforov, A. Y.; Можаев, Роман Константинович; Печенкин, Александр Александрович; Уланова, Анастасия Владиславовна; Никифоров, Александр Юрьевич© 2021 IEEE.The paper presents the comparative results of spectrum degradation organic light-emitting diode with different dominant wavelengths. The diodes were exposed with stationary gamma-irradiation at room and low temperatures. The research has shown moderate degradation of the light-emission spectrum when exposed at room temperature and significant degradation at low temperature. The greatest deterioration in the optical parameters was observed for organic light-emitting diodes with blue and white light emission color.
- ПубликацияТолько метаданныеAMOS Temperature-Insensitive Voltage Divider and Its Application for Voltage Reference Design(2021) Danilov, I. A.; Gorbunov, M. S.; Nikiforov, A. Y.; Никифоров, Александр Юрьевич© 2021 IEEE.We propose a MOS temperature-insensitive voltage divider circuit. The circuit works well in both weak inversion and strong inversion modes. The temperature insensitivity of this device is derived analytically and demonstrated by simulation. We also propose a voltage reference circuit based on the divider. We use a 90 nm CMOS Process DesignKit (PDK) to provide SPICE simulation.
- ПубликацияТолько метаданныеHigh-speed spectrometer based on a silicon CCD-array matrix for transient changes measuring in optical radiation spectra(2021) Minibaev, T. I.; Ukolov, D. S.; Mozhaev, R. K.; Nikiforov, A. Y.; Можаев, Роман Константинович; Никифоров, Александр Юрьевич© 2021 IEEE.The paper discusses the high-speed 400-1000nm range spectrometer based on the M150 monochromator and a silicon CCD-array matrix as a detector module. A description and general diagram of the complex is presented, consisting of the following main parts: optical part, communication, and digital and software sections. The current work considers specialized software for transmitting, processing, and outputting data management of the spectrometer through a graphical user interface which allows selecting the desired wavelength range, exposure time, and duration of the graph. The complex utilizes the FPGA hardware capabilities to process converted signals in situ, providing additional services to make optical spectra analysis easier for the operator. The main application field of the spectrometer is the research of rapid changes in the spectral characteristics of optical materials, such as optic fibers and laser-pump crystals, and products based on them when exposed to pulsed ionizing radiation. Other possible subjects of research and areas of improvement are highlighted.
- ПубликацияТолько метаданныеCompact Models for Radiation Hardening by Design of SiGe BiCMOS, GaAs and SOI CMOS Microwave Circuits(2021) Sotskov, D. I.; Usachev, N. A.; Elesin, V. V.; Metelkin, I. O.; Zhidkov, N. M.; Nikiforov, A. Y.; Сотсков, Денис Иванович; Усачев, Николай Александрович; Елесин, Вадим Владимирович; Жидков, Никита Михайлович; Никифоров, Александр Юрьевич© 2021 IEEE.Compact models of silicon-germanium and gallium-arsenide heterojunction bipolar transistors, gallium-arsenide pseudomorphic high electron mobility transistor, and silicon on insulator field-effect transistor radiation responses are presented. Special subcircuits for modeling displacement damages, dose rate, and total ionizing dose effects are connected to the standard device models. Models based on core VBIC, EEHEMT and BSIM provided by semiconductor foundry as a part of process design kit and verified in a frequency range from DC to 26 GHz and suitable for small signal and non-linear simulation. Radiation-dependent parameters are described by physically based equations which compatible with proprietary simulators. Examples of radiation-hardening by design techniques for microwave monolithic integrated circuits (MMIC) are presented with standard computer-aided design (CAD) tools. Proposed models were verified by estimating static and dynamic characteristics of transistors. Disagreement of experimental and simulation results are less than 20% that makes it useful and efficient tool for MMIC radiation hardening by design.