Персона: Елесин, Вадим Владимирович
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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Вадим Владимирович
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- ПубликацияТолько метаданныеA SINGLE POWER SUPPLY 0.1-3.5 GHZ LOW NOISE AMPLIFIER DESIGN USING A LOW COST 0.5 mu M D-MODE PHEMT PROCESS(2020) Sotskov, D.; Elesin, V.; Kuznetsov, A.; Usachev, N.; Zidkov, N.; Nikiforov, A.; Сотсков, Денис Иванович; Елесин, Вадим Владимирович; Кузнецов, Александр Геннадьевич; Усачев, Николай Александрович; Жидков, Никита Михайлович; Никифоров, Александр ЮрьевичDesign and testing results of a single power supply wide-band low noise amplifier (LNA) based on low cost 0.5 mu m D-mode pHEMT process are presented. It is shown that the designed cascode LNA has operating frequency range up to 3.5 GHz, power gain above 15 dB, noise figure below 2.2 dB, output linearity above 17 dBm and power consumption less than 325 mW. Potential immunity of the LNA to total ionizing dose and destructive single event effects exceed 300 krad and 60 MeV center dot cm(2)/mg respectively.
- ПубликацияТолько метаданныеSOI CMOS, SiGe BiCMOS, GaAs HBT and GaAs PHEMT Technologies Characterization for Radiation-Tolerant Microwave Applications(2021) Sotskov, D. I.; Kuznetsov, A. G.; Elesin, V. V.; Usachev, N. A.; Chukov, G. V.; Nikiforov, A. Y.; Сотсков, Денис Иванович; Кузнецов, Александр Геннадьевич; Елесин, Вадим Владимирович; Усачев, Николай Александрович; Чуков, Георгий Викторович; Никифоров, Александр Юрьевич© 2021 IEEE.Radiation-oriented (RO-) and microwave (MW) characterization of the several process technologies - CMOS silicon-on-insulator (SOI) 180 nm process, CMOS 90 nm process, SiGe BiCMOS 0.42/0.25 μm process, GaAs heterojunction bipolar transistor (HBT) 2 μm process and GaAs pseudomorphic high electron mobility transistor (PHEMT) 0.5 μm process, which suitable for the development of radiation-tolerance transceiver integrated circuits with operating frequencies up to 30 GHz are presented. The results of MW-characterization showed two process technologies manufacturing in "foundry"mode - CMOS SOI 180 nm and CMOS 90 nm potentiality for the development of transceiver ICs with operating frequencies above 3 GHz and 12 GHz respectively. Obtained experimental results allow to determine radiation-tolerance indicators for the total ionizing dose, neutrons, impulse exposure and heavy ions and specify critical elements and IP-block fragments for given processes. Experimental data can be used at the first step of reasonable choice of process technologies for radiation-tolerant transceiver design.
- ПубликацияТолько метаданныеComparative Analysis of Millimeter-Wave Transceivers for 5G Applications(2022) Usachev, N.; Sotskov, D.; Zhidkov, N.; Elesin, V.; Усачев, Николай Александрович; Сотсков, Денис Иванович; Жидков, Никита Михайлович; Елесин, Вадим Владимирович© 2022 IEEE.High data rate and low latency are the key parameters of a fifth-generation (5G) mobile network. Millimeter-wave transceiver integrated circuits (IC) are the important building blocks of a remote radio unit that determine the commination distance and consume the significant value of power. Transceiver ICs include beamformer and frequency converter paths. Active phased antenna arrays with a size of up to 256 elements are employed to improve radio channel efficiencies such as data rate and operating range. In this work, a brief review of the 5G beamformer millimeter-wave transceivers ICs implemented in SiGe BiCMOS and CMOS processes is presented. A variety of examples of transceivers IC with a frequency range from 24 to 30 GHz are compared in terms of the Figure of merit (FOM). It's shown that the CMOS transceiver ICs has a maximum FOM of 1.2 ċ 1018Hz/W.
- ПубликацияТолько метаданныеTotal Ionizing Dose Sensitivity of 180 nm Silicon-on-Insulator Microwave Low-Noise Amplifier(2021) Gorbunov, M. S.; Zhidkov, N. M.; Sotskov, D. I.; Sotskov,D.I.; Kuznetsov, A. G.; Kotov, V. N.; Elesin, V. V.; Жидков, Никита Михайлович; Сотсков, Денис Иванович; Кузнецов, Александр Геннадьевич; Котов, Владислав Николаевич; Елесин, Вадим Владимирович© 2021 IEEE.We study the total ionizing dose (TID) effects sensitivity of 180 nm Silicon-on-Insulator (SOI) microwave low-noise amplifier (LNA) parameters. We use the previously developed Verilog-A based model to explain the results obtained.
- ПубликацияТолько метаданныеA Practical Approach to Underground UHF Channel Characterization(2021) Elesina, V. V.; Kuznetsov, A. G.; Chukov, G. V.; Elesin, V. V.; Usachev, N. A.; Кузнецов, Александр Геннадьевич; Чуков, Георгий Викторович; Елесин, Вадим Владимирович; Усачев, Николай Александрович© 2021 IEEE.Radio frequency identification systems (RFID) are widely used for monitoring and localization of underground infrastructure objects: pipelines, power, and communication networks. Wireless underground sensor networks (WUSN) are the promising application areas that cover a number of fields: agriculture, mining, environmental control, etc. A progress in semiconductor technologies has opened up new opportunities for developing cheap and compact monolithic ultra-high frequency (UHF) receiver and transmitter integrated circuits - basic building blocks of RFID and WUSN systems. Read range (RR), the path loss (PL) and the bit error rate (BER) are the main characteristics of RFID and WUSN communication channel. The dielectric properties of the soil, determined by the composition and moisture, affect the electromagnetic wave (EMW) propagation that leads to significant PL and limits RR. In this work, a practical approach to UHF underground channel characterization, based on the modified Friis model and the vector network measurements is proposed. The modeling and measurements issues are discussed, that are important for the path loss prediction in the soil with different composition and moisture.
- ПубликацияТолько метаданныеSiGe BiCMOS Voltage-Controlled Oscillator and Mixer IP-blocks for the Next-Generation Communication Transceivers(2021) Selishchev, I. A.; Sotskov, D.; Kuznetsov, A. G.; Usachev, N. A.; Elesin, V. V.; Kotov, V. N.; Balbekov, A. O.; Сотсков, Денис Иванович; Кузнецов, Александр Геннадьевич; Усачев, Николай Александрович; Елесин, Вадим Владимирович; Котов, Владислав Николаевич© 2021 IEEE.Design and testing results of I/Q mixer and voltage-controlled oscillator IP-blocks for application in 5G communications are presented. IP-blocks were implemented in a commercial 0.42/0.25 µm SiGe BiCMOS process. The test results demonstrate that designed mixer has a conversion gain of more than 5.5 dB in the operating RF frequency range from 25.5 GHz to 26.5 GHz and IF frequency range from 1 GHz to 2 GHz, power consumption less than 235 mW. The designed voltage-controlled oscillator has an operating frequency range from 20.8 GHz to 24.6 GHz in the control voltage range from 0 V to 4 V, the output power is not less than 6 dBm, power consumption is less than 116 mW.
- ПубликацияТолько метаданныеD-mode pHEMT 0.5 um Process Characterization to Wide-Band LNA Design(2019) Sotskov, D. I.; Usachev, N. A.; Elesin, V. V.; Kuznetsov, A. G.; Amburkin, K. M.; Chukov, G. V.; Titova, M. I.; Zidkov, N. M.; Сотсков, Денис Иванович; Усачев, Николай Александрович; Елесин, Вадим Владимирович; Кузнецов, Александр Геннадьевич; Амбуркин, Константин Михайлович; Чуков, Георгий Викторович; Жидков, Никита Михайлович© 2019 IEEE.Results of domestic D-mode pHEMT 0.5 μm process characterization obtained during the design and testing of the single power supply wide-band low noise amplifier (LNA) are present. The simulation and test results demonstrate that designed cascode LNA has operating frequency range up to 3.5 GHz, power gain above 15 dB, noise figure below 2.2 dB, output linearity above than 17 dBm and power consumption less than 325 mW. Potential immunity of LNA to total ionizing dose and destructive single event effects exceed 300 krad and 60 MeV·cm2/mg respectively.
- ПубликацияТолько метаданныеInvestigation of transient radiation effects in GaAs field effect transistors under pulse ionization(2019) Metelkin, I. O.; Elesin, V. V.; Kuznetsov, A. G.; Usachev, N. А.; Елесин, Вадим Владимирович; Кузнецов, Александр Геннадьевич; Усачев, Николай Александрович© 2019 IEEE.Measurements and numerical simulation results of GaAs MESFET and PHEMT response to transient irradiation for wide range of ionization levels and bias conditions are presented. It was shown that specific bias conditions and ionization levels can be found for detail separate investigation of channel current change and bipolar-like amplification effects. Simple Shockley FET model was found to be applicable to analyze channel current change due to photovoltage occurrence at channel-buffer junction.
- ПубликацияТолько метаданныеDisplacement Damage Effects Mitigation Approach for Heterojunction Bipolar Transistor Frequency Synthesizers(2020) Sotskov, D. I.; Elesin, V. V.; Kuznetsov, A. G.; Zhidkov, N. M.; Metelkin, I. O.; Amburkin, K. M.; Amburkin, D. M.; Usachev, N. A.; Boychenko, D. V.; Elesina, V. V.; Сотсков, Денис Иванович; Елесин, Вадим Владимирович; Кузнецов, Александр Геннадьевич; Жидков, Никита Михайлович; Амбуркин, Константин Михайлович; Амбуркин, Дмитрий Михайлович; Усачев, Николай Александрович; Бойченко, Дмитрий Владимирович© 1963-2012 IEEE.This work focuses on the design issues of radio frequency (RF) bipolar integrated circuits (ICs) as a part of frequency synthesizers for extreme environmental applications. It is shown that silicon-germanium (SiGe) and gallium arsenide (GaAs) heterojunction bipolar transistors (HBTs) as well as bipolar RF ICs (including frequency dividers, voltage-controlled oscillators, and wide-band amplifiers) are highly sensitive to ambient temperature and radiation-induced displacement damage. This article also presents a design approach based on specialized HBT macromodels and hardening techniques.
- ПубликацияТолько метаданныеCharacterization of the Effects of Neutron-Induced Displacement Damage on the SiGe:C Heterojunction Bipolar Transistors(2021) Sotskov, D. I.; Kuznetsov, A. G.; Elesin, V. V.; Selishchev, I. A.; Kotov, V. N.; Nikiforov, A. Y.; Сотсков, Денис Иванович; Кузнецов, Александр Геннадьевич; Елесин, Вадим Владимирович; Котов, Владислав Николаевич; Никифоров, Александр ЮрьевичThis paper explores the effects of neutron-induced displacement damage on static and high frequency parameters of three types of SiGe: npn heterostructure bipolar transistors from the SGB25V BiCMOS technology. © 2021 IEEE.