Publication: Investigation of transient radiation effects in GaAs field effect transistors under pulse ionization
Дата
2019
Авторы
Metelkin, I. O.
Elesin, V. V.
Kuznetsov, A. G.
Usachev, N. А.
Journal Title
Journal ISSN
Volume Title
Издатель
Аннотация
© 2019 IEEE.Measurements and numerical simulation results of GaAs MESFET and PHEMT response to transient irradiation for wide range of ionization levels and bias conditions are presented. It was shown that specific bias conditions and ionization levels can be found for detail separate investigation of channel current change and bipolar-like amplification effects. Simple Shockley FET model was found to be applicable to analyze channel current change due to photovoltage occurrence at channel-buffer junction.
Описание
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Цитирование
Investigation of transient radiation effects in GaAs field effect transistors under pulse ionization / Metelkin, I.O. [et al.] // 2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019. - 2019. - 10.1109/RADECS47380.2019.9745656
URI
https://www.doi.org/10.1109/RADECS47380.2019.9745656
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https://openrepository.mephi.ru/handle/123456789/19645
https://www.scopus.com/record/display.uri?eid=2-s2.0-85128553173&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000848160100010
https://openrepository.mephi.ru/handle/123456789/19645