Publication: Investigation of transient radiation effects in GaAs field effect transistors under pulse ionization
dc.contributor.author | Metelkin, I. O. | |
dc.contributor.author | Elesin, V. V. | |
dc.contributor.author | Kuznetsov, A. G. | |
dc.contributor.author | Usachev, N. А. | |
dc.contributor.author | Елесин, Вадим Владимирович | |
dc.contributor.author | Кузнецов, Александр Геннадьевич | |
dc.contributor.author | Усачев, Николай Александрович | |
dc.date.accessioned | 2024-11-21T19:13:06Z | |
dc.date.available | 2024-11-21T19:13:06Z | |
dc.date.issued | 2019 | |
dc.description.abstract | © 2019 IEEE.Measurements and numerical simulation results of GaAs MESFET and PHEMT response to transient irradiation for wide range of ionization levels and bias conditions are presented. It was shown that specific bias conditions and ionization levels can be found for detail separate investigation of channel current change and bipolar-like amplification effects. Simple Shockley FET model was found to be applicable to analyze channel current change due to photovoltage occurrence at channel-buffer junction. | |
dc.identifier.citation | Investigation of transient radiation effects in GaAs field effect transistors under pulse ionization / Metelkin, I.O. [et al.] // 2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019. - 2019. - 10.1109/RADECS47380.2019.9745656 | |
dc.identifier.doi | 10.1109/RADECS47380.2019.9745656 | |
dc.identifier.uri | https://www.doi.org/10.1109/RADECS47380.2019.9745656 | |
dc.identifier.uri | https://www.scopus.com/record/display.uri?eid=2-s2.0-85128553173&origin=resultslist | |
dc.identifier.uri | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000848160100010 | |
dc.identifier.uri | https://openrepository.mephi.ru/handle/123456789/19645 | |
dc.relation.ispartof | 2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019 | |
dc.title | Investigation of transient radiation effects in GaAs field effect transistors under pulse ionization | |
dc.type | Conference Paper | |
dspace.entity.type | Publication | |
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