Publication: Total Ionizing Dose Sensitivity of 180 nm Silicon-on-Insulator Microwave Low-Noise Amplifier
Дата
2021
Авторы
Gorbunov, M. S.
Zhidkov, N. M.
Sotskov, D. I.
Sotskov,D.I.
Kuznetsov, A. G.
Kotov, V. N.
Elesin, V. V.
Жидков, Никита Михайлович
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Аннотация
© 2021 IEEE.We study the total ionizing dose (TID) effects sensitivity of 180 nm Silicon-on-Insulator (SOI) microwave low-noise amplifier (LNA) parameters. We use the previously developed Verilog-A based model to explain the results obtained.
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Цитирование
Total Ionizing Dose Sensitivity of 180 nm Silicon-on-Insulator Microwave Low-Noise Amplifier / Gorbunov, M.S. [et al.] // Proceedings of the International Conference on Microelectronics, ICM. - 2021. - 2021-September. - P. 365-368. - 10.1109/MIEL52794.2021.9569162