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Total Ionizing Dose Sensitivity of 180 nm Silicon-on-Insulator Microwave Low-Noise Amplifier

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dc.contributor.authorGorbunov, M. S.
dc.contributor.authorZhidkov, N. M.
dc.contributor.authorSotskov, D. I.
dc.contributor.authorSotskov,D.I.
dc.contributor.authorKuznetsov, A. G.
dc.contributor.authorKotov, V. N.
dc.contributor.authorElesin, V. V.
dc.contributor.authorЖидков, Никита Михайлович
dc.contributor.authorСотсков, Денис Иванович
dc.contributor.authorКузнецов, Александр Геннадьевич
dc.contributor.authorКотов, Владислав Николаевич
dc.contributor.authorЕлесин, Вадим Владимирович
dc.date.accessioned2024-11-29T22:32:52Z
dc.date.available2024-11-29T22:32:52Z
dc.date.issued2021
dc.description.abstract© 2021 IEEE.We study the total ionizing dose (TID) effects sensitivity of 180 nm Silicon-on-Insulator (SOI) microwave low-noise amplifier (LNA) parameters. We use the previously developed Verilog-A based model to explain the results obtained.
dc.format.extentС. 365-368
dc.identifier.citationTotal Ionizing Dose Sensitivity of 180 nm Silicon-on-Insulator Microwave Low-Noise Amplifier / Gorbunov, M.S. [et al.] // Proceedings of the International Conference on Microelectronics, ICM. - 2021. - 2021-September. - P. 365-368. - 10.1109/MIEL52794.2021.9569162
dc.identifier.doi10.1109/MIEL52794.2021.9569162
dc.identifier.urihttps://www.doi.org/10.1109/MIEL52794.2021.9569162
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85118447527&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/24910
dc.relation.ispartofProceedings of the International Conference on Microelectronics, ICM
dc.titleTotal Ionizing Dose Sensitivity of 180 nm Silicon-on-Insulator Microwave Low-Noise Amplifier
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.volume2021-September
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