Publication: Characterization of the Effects of Neutron-Induced Displacement Damage on the SiGe:C Heterojunction Bipolar Transistors
Дата
2021
Авторы
Sotskov, D. I.
Kuznetsov, A. G.
Elesin, V. V.
Selishchev, I. A.
Kotov, V. N.
Nikiforov, A. Y.
Journal Title
Journal ISSN
Volume Title
Издатель
Аннотация
This paper explores the effects of neutron-induced displacement damage on static and high frequency parameters of three types of SiGe: npn heterostructure bipolar transistors from the SGB25V BiCMOS technology. © 2021 IEEE.
Описание
Ключевые слова
Displacement damage effects , Fast-neutron irradiation , Radiation effects , SiGe:C HBT
Цитирование
Characterization of the Effects of Neutron-Induced Displacement Damage on the SiGe:C Heterojunction Bipolar Transistors / Sotskov, D.I. [et al.] // RADECS 2021 - European Conference on Radiation and its Effects on Components and Systems. - 2021. - 10.1109/RADECS53308.2021.9954481