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Characterization of the Effects of Neutron-Induced Displacement Damage on the SiGe:C Heterojunction Bipolar Transistors

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dc.contributor.authorSotskov, D. I.
dc.contributor.authorKuznetsov, A. G.
dc.contributor.authorElesin, V. V.
dc.contributor.authorSelishchev, I. A.
dc.contributor.authorKotov, V. N.
dc.contributor.authorNikiforov, A. Y.
dc.contributor.authorСотсков, Денис Иванович
dc.contributor.authorКузнецов, Александр Геннадьевич
dc.contributor.authorЕлесин, Вадим Владимирович
dc.contributor.authorКотов, Владислав Николаевич
dc.contributor.authorНикифоров, Александр Юрьевич
dc.date.accessioned2024-11-30T04:06:28Z
dc.date.available2024-11-30T04:06:28Z
dc.date.issued2021
dc.description.abstractThis paper explores the effects of neutron-induced displacement damage on static and high frequency parameters of three types of SiGe: npn heterostructure bipolar transistors from the SGB25V BiCMOS technology. © 2021 IEEE.
dc.identifier.citationCharacterization of the Effects of Neutron-Induced Displacement Damage on the SiGe:C Heterojunction Bipolar Transistors / Sotskov, D.I. [et al.] // RADECS 2021 - European Conference on Radiation and its Effects on Components and Systems. - 2021. - 10.1109/RADECS53308.2021.9954481
dc.identifier.doi10.1109/RADECS53308.2021.9954481
dc.identifier.urihttps://www.doi.org/10.1109/RADECS53308.2021.9954481
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85143916044&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/25426
dc.relation.ispartofRADECS 2021 - European Conference on Radiation and its Effects on Components and Systems
dc.subjectDisplacement damage effects
dc.subjectFast-neutron irradiation
dc.subjectRadiation effects
dc.subjectSiGe:C HBT
dc.titleCharacterization of the Effects of Neutron-Induced Displacement Damage on the SiGe:C Heterojunction Bipolar Transistors
dc.typeConference Paper
dspace.entity.typePublication
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