Персона: Калашников, Владислав Дмитриевич
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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Владислав Дмитриевич
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- ПубликацияТолько метаданныеSolid-State Drives Parameters Control System for Ionizing Radiation Tests(2021) Chepov, V. A.; Shmakov, S. B.; Shvetsov-Shiovsky, I. I.; Petrov, A. G.; Kalashnikov, V. D.; Шмаков, Сергей Борисович; Швецов-Шиловский, Иван Иванович; Петров, Андрей Григорьевич; Калашников, Владислав Дмитриевич© 2021 IEEE.The paper describes an automated system for monitoring the parameters of solid-state drives under the influence of ionizing radiation using National Instruments equipment and NI LabVIEW software. The paper presents a block diagram of a test bench developed based on the National Instruments hardware complex. It allows us to supply voltage to a device under test (DUT), measure the value of the DUT current consumption, and carry out functional control of solid-state drives with NAND flash memory and SATA and USB interfaces in order to register single event latch-ups (SEL) and the loss of the device's ability to read and rewrite information. The paper provides a detailed description of the functional tools included in the software that was developed using the NI LabVIEW programming environment and used for reading and subsequent analysis of data on solid-state drives, as well as for writing new data and the ability to perform various operations on them. The paper describes the main steps of the total ionizing dose testing procedure that was carried out on solid-state drives. The results of the experiment are presented.
- ПубликацияТолько метаданныеMethod for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects(2019) Ranneva, E. V.; Verizhnikov, A. I.; Tsyrlov, A. M.; Fedosov, V. S.; Chernyak, M. E.; Ulanova, A. V.; Nikiforov, A. Y.; Kalashnikov, V. D.; Titovets, D. O.; Уланова, Анастасия Владиславовна; Никифоров, Александр Юрьевич; Калашников, Владислав Дмитриевич; Титовец, Дмитрий Олегович© 2019, Pleiades Publishing, Ltd.Abstract: This paper is devoted to analyzing the effect of gamma radiation on the behavior of optocouplers. According to a series of experiments that involve masking various parts of a chip from X-ray irradiation, the most sensitive region of the chip is determined and the design of the optocoupler is improved. Upon modification, the radiation hardness of the device more than triples.
- ПубликацияТолько метаданныеInfluence of X-ray Source Spectrum on TID Degradation of CMOS Devices(2022) Teplyakova, A. O.; Egorov, A. Y.; Kalashnikov, V. D.; Ulanova, A. V.; Marfin, V. A.; Rogovaia, M. A.; Калашников, Владислав Дмитриевич; Уланова, Анастасия Владиславовна© 2022 IEEE.The paper presents an evaluation of degradation of parameters of CMOS devices under x-ray irradiation with different spectra. Using aluminum filters of different thicknesses and various operating modes of the X-ray facility the low-energy part of X-ray spectrum was attenuated. The obtained data indicates that the modification of the X-ray energy spectrum affects ionizing radiation response of CMOS ICs parameters. A quantitative assessment of the difference in the radiation behavior of IC's parameters is given. A hypothesis that can explain the cause of difference in parameter degradation is put forward.
- ПубликацияТолько метаданныеThe Optimal Measuring System Composition for the Transceivers Radiation Hardness Investigation(2021) Vaskin, R. E.; Kalashnikov, V. D.; Sorokoumov, G. S.; Boychenko, D. V.; Васькин, Роман Евгеньевич; Калашников, Владислав Дмитриевич; Сорокоумов, Георгий Сергеевич; Бойченко, Дмитрий Владимирович© 2021 IEEE.Modern transceivers are widely used in the design of the on-board equipment of spacecraft. The effects of space ionizing radiation can lead to failures in operation of transceivers, leading to a loss of the transmitted data. It is necessary to provide radiation hardness assurance of transceivers in order to evaluate the rate of upsets in the operation of transceivers used the on-board equipment of spacecraft. The paper describes main types of failures observed in interface ICs operating in space radiation environment. The classification of functional failures in transceivers exposed to ionizing radiation and monitoring methods are presented in this paper. Parameters of transceivers that has to be monitored during radiation testing are listed. We reviewed National Instruments equipment used in radiation testing of different types of transceivers. A measuring system based on this equipment was used for radiation testing of TLK2711 transceiver in loop operation mode over a serial data channel.