Персона: Самотаев, Николай Николаевич
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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- ПубликацияОткрытый доступМеталлооксидные чувствительные элементы интегральных датчиков концентраций водородсодержащих газов(МИФИ, 2008) Самотаев, Н. Н.; Самотаев, Николай Николаевич; Подлепецкий, Б. И.
- ПубликацияОткрытый доступCombination of Material Processing and Characterization Methods for Miniaturization of Field-Effect Gas Sensor(2023) Samotaev, N.; Litvinov, A.; Oblov, K.; Etrekova, M.; Podlepetsky, B.; Dzhumaev, P. S.; Самотаев, Николай Николаевич; Литвинов, Артур Васильевич; Облов, Константин Юрьевич; Этрекова, Майя Оразгельдыевна; Подлепецкий, Борис Иванович; Джумаев, Павел СергеевичThe technological approach for the low-scale production of field-effect gas sensors as electronic components for use in non-lab ambient environments is described. In this work, in addition to the mechanical protection of a gas-sensitive structure, an emphasis was also placed on the very topical issue of thermal stabilization around the one temperature point, even if it is several degrees higher than the surrounding one, which will probably also be useful for any type of application for many types of field-effect sensors. Considerable attention was paid to the characterization of the results obtained by various invasive and non-invasive methods for diagnosing the manufactured construction. The technology described in this article occupies an intermediate position between laboratory samples tested in clean rooms with stable ambient atmospheres, and experimental and small-scale production sensors designed for real operating conditions to solve the narrow application of measuring low concentrations of hydrogen.
- ПубликацияОткрытый доступAnalysis of Metallic-to-Oxide Sputtering Mode Transition During Reactive Magnetron Deposition of Aluminum Oxide Coatings(2025) Kaziev, A. V.; Tumarkin, A. V.; Kolodko, D. V.; Kharkov, M. M.; Konaguru, R.; Ageychenkov, D. G.; Samotaev, N. N.; Oblov, K. Yu.; Казиев, Андрей Викторович; Тумаркин, Александр Владимирович; Колодко, Добрыня Вячеславич; Харьков, Максим Михайлович; Агейченков, Дмитрий Григорьевич; Самотаев, Николай Николаевич; Облов, Константин Юрьевич
- ПубликацияОткрытый доступMicro-catalytic gas sensor operating modes for extended life service, increasing sensitivity to target gases and power consumption reduction(2020) Ducso, C.; Samotaev, N.; Oblov, K.; Dzhumaev, P.; Filipchuk, D.; Самотаев, Николай Николаевич; Облов, Константин Юрьевич; Джумаев, Павел Сергеевич© 2020 Institute of Physics Publishing. All rights reserved.Catalytic gas sensors are among of the most old and widespread gas sensors for combustible gas concentration measurements. However, power consumption these sensors provide is relativity high for modern electronic applications. In this paper research results of combination a silicon MEMS fabrication with operating modes for extended life service, increasing sensitivity to target gases and power consumption reduction are presented. The described solutions allow achieving long-term stability of the sensor in difficult operating conditions - the main requirement for industrial applications, where the continuity of the process is of high value expressed in tangible assets and human lives.
- ПубликацияОткрытый доступThermal Conductivity Gas Sensors for High-Temperature Applications(2024) Samotaev, N.; Podlepetsky, B.; Mashinin, M.; Ivanov, I.; Obraztsov, I.; Oblov, K.; Dzhumaev, P.; Самотаев, Николай Николаевич; Подлепецкий, Борис Иванович; Машинин, Михаил Олегович; Иванов, Игорь Александрович; Образцов, Иван Сергеевич; Облов, Константин Юрьевич; Джумаев, Павел СергеевичThis paper describes a fast and flexible microfabrication method for thermal conductivity gas sensors useful in high-temperature applications. The key parts of the sensor, the microheater and the package, were fabricated from glass-coated platinum wire and the combination of laser micromilling (ablation) of already-sintered monolithic ceramic materials and thick-film screen-printing technologies. The final thermal conductivity gas sensor was fabricated in the form of a complete MEMS device in a metal ceramic package, which could be used as a compact miniaturized surface-mounted device for soldering to standard PCB. Functional test results of the manufactured sensor are presented, demonstrating their full suitability for gas sensing applications and indicating that the obtained parameters are at a level comparable to those of standard industrially produced sensors. The results of the design and optimization principles of applied methods are discussed with regard to possible wider applications in thermal gas sensor prototyping in the future. The advantage of the developed sensors is their ability to operate in air environments under high temperatures of 900 ‚шC and above. The sensor element material and package metallization were insensitive to oxidation compared with classical sensor-solution-based metalў??glass packages and silicone MEMS membranes, which exhibit mechanical stress at temperatures above 700 ‚шC.
- ПубликацияОткрытый доступPreparation of Alumina Thin Films by Reactive Modulated Pulsed Power Magnetron Sputtering with Millisecond Pulses(2024) Tumarkin, A. V.; Kolodko, D. V.; Kharkov, M. M.; Stepanova, T. V.; Kaziev, A. V.; Samotaev, N. N.; Oblov, K. Yu.; Тумаркин, Александр Владимирович; Колодко, Добрыня Вячеславич; Харьков, Максим Михайлович; Степанова, Татьяна Владимировна; Казиев, Андрей Викторович; Самотаев, Николай Николаевич; Облов, Константин ЮрьевичThispaper aims to investigate the quality of thin alumina films deposited on glass samples using magnetron sputtering in the reactive modulated pulsed power mode (MPPMS) and evaluate the process productivity. The aluminum target was sputtered in Ar/O2 gas mixtures with different fractions of oxygen in the total gas flow, in the fixed pulsed voltage mode. The pulse-on duration was varied between 5 and 10 ms, while the pulse-off time was 100 or 200 ms. The dependences of mass deposition rate and discharge current on the oxygen flow were measured, and the specific deposition rate values were calculated. Prepared coatings had a thicknesses of 100ў??400 nm. Their quality was assessed by scratch testing and by measuring density, refractory index, and extinction coefficient for different power management strategies. The strong influence of pulse parameters on the coating properties was observed, resulting in a maximum density of 3.6 g/cm3 and a refractive index of 1.68 for deposition modes with higher duty cycle values. Therefore, adjusting the pulse-on and pulse-off periods in MPPMS can be used not only to optimize the deposition rate but also as a tool to tune the optical characteristics of the films. The performance of the studied deposition method was evaluated by comparing the specific growth rates of alumina coatings with the relevant data for other magnetron discharge modes. In MPPMS, a specific deposition rate of 200 nm/min/kW was obtained for highly transparent Al2O3, without using any dedicated feedback loop system for oxygen pressure stabilization, which makes MPPMS superior to short-pulse high-power impulse magnetron sputtering (HiPIMS) modes.
- ПубликацияОткрытый доступMOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors(2023) Litvinov, A.; Etrekova, M.; Podlepetsky, B.; Samotaev, N.; Oblov, K.; Литвинов, Артур Васильевич; Этрекова, Майя Оразгельдыевна; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич; Облов, Константин ЮрьевичThe features of the wide band gap SiC semiconductor use in the capacitive MOSFE sensors structure in terms of the hydrogen gas sensitivity effect, the response speed, and the measuring signals optimal parameters are studied. Sensors in a high-temperature ceramic housing with the Me/Ta2O5/SiCn+/4H-SiC structures and two types of gas-sensitive electrodes were made: Palladium and Platinum. The effectiveness of using Platinum as an alternative to Palladium in the MOSFE-Capacitor (MOSFEC) gas sensors high-temperature design is evaluated. It is shown that, compared with Silicon, the use of Silicon Carbide increases the response rate, while maintaining the sensors high hydrogen sensitivity. The operating temperature and test signal frequency influence for measuring the sensor s capacitance on the sensitivity to H2 have been studied.
- ПубликацияОткрытый доступDetection of Chlorine by field effect sensor(2019) Samotaev, N. N.; Litvinov, A. V.; Etrekova, M. O.; Самотаев, Николай Николаевич; Литвинов, Артур Васильевич; Этрекова, Майя Оразгельдыевна© Published under licence by IOP Publishing Ltd.The gas analytical system for chlorine gas measurement based on metal-insulator-semiconductor field effect (MIS FE) type sensor has been developed. High sensitivity of MIS FE sensor to chlorine allows measuring concentrations in the sub-ppb level and to be stable for overload hydrogen gas concentration typically present in industrial electrolysis application. With the pulse heating mode, the response and relaxation times of the MIS sensor are reduced by an order of magnitude which gives chance to use one for high precision environmental control.
- ПубликацияОткрытый доступStructure and Technological Parameters’ Effect on MISFET-Based Hydrogen Sensors’ Characteristics(2023) Podlepetsky, B.; Samotaev, N.; Etrekova, M.; Litvinov, A.; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич; Этрекова, Майя Оразгельдыевна; Литвинов, Артур ВасильевичThe influence of structure and technological parameters (STPs) on the metrological characteristics of hydrogen sensors based on MISFETs has been investigated. Compact electrophysical and electrical models connecting the drain current, the voltage between the drain and the source and the voltage between the gate and the substrate with the technological parameters of the n-channel MISFET as a sensitive element of the hydrogen sensor are proposed in a general form. Unlike the majority of works, in which the hydrogen sensitivity of only the threshold voltage of the MISFET is investigated, the proposed models allow us to simulate the hydrogen sensitivity of gate voltages or drain currents in weak and strong inversion modes, taking into account changes in the MIS structure charges. A quantitative assessment of the effect of STPs on MISFET performances (conversion function, hydrogen sensitivity, gas concentration measurement errors, sensitivity threshold and operating range) is given for a MISFET with a Pd-Ta2O5-SiO2-Si structure. In the calculations, the parameters of the models obtained on the basis of the previous experimental results were used. It was shown how STPs and their technological variations, taking into account the electrical parameters, can affect the characteristics of MISFET-based hydrogen sensors. It is noted, in particular, that for MISFET with submicron two-layer gate insulators, the key influencing parameters are their type and thickness. Proposed approaches and compact refined models can be used to predict performances of MISFET-based gas analysis devices and micro-systems.
- ПубликацияОткрытый доступPrototype of nitro compound vapor and trace detector based on a capacitive MIS sensor(2020) Mikhailov, A.; Samotaev, N.; Litvinov, A.; Etrekova, M.; Oblov, K.; Filipchuk, D.; Самотаев, Николай Николаевич; Литвинов, Артур Васильевич; Этрекова, Майя Оразгельдыевна; Облов, Константин Юрьевич© 2020 by the authors. Licensee MDPI, Basel, Switzerland.A prototype of a nitro compound vapor and trace detector, which uses the pyrolysis method and a capacitive gas sensor based on the metal–insulator–semiconductor (MIS) structure type Pd–SiO2 –Si, was developed and manufactured. It was experimentally established that the detection limit of trinitrotoluene trace for the detector prototype is 1 × 10−9 g, which corresponds to concentration from 10−11 g/cm3 to 10−12 g/cm3. The prototype had a response time of no more than 30 s. The possibility of further improving the characteristics of the prototype detector by reducing the overall dimensions and increasing the sensitivity of the MIS sensors is shown.