Publication: Reflectance Modification in Nanostructured Silicon Layers with Gradient Porosity
Дата
2019
Авторы
Mussabek, G. K.
Yermukhamed, D.
Suleimenova, Z. A.
Assilbayeva, R. B.
Zavestovskaya, I. N.
Timoshenko, V. Y.
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Volume Title
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Аннотация
A significant change in effective reflectance spectra of nanostructured porous silicon layers grown with different times of metal-assisted chemical etching is detected. The low reflectances at the level of 5-10% measured in the spectral range of 200-400 nm are explained by strong elastic scattering of light in combination with absorption in silicon nanostructures, while a reflectance increase in the range of 500-1800 nm, which is visually detected as a "white" layer appearance is associated with Mie scattering in silicon nanostructures with gradient porosity under conditions of weak optical absorption. The results obtained are discussed from the viewpoint of potential applications of "black" and "white" nanocrystalline silicon in photonics and sensorics.
Описание
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Цитирование
Reflectance Modification in Nanostructured Silicon Layers with Gradient Porosity / Mussabek, GK [et al.] // Bulletin of the Lebedev Physics Institute. - 2019. - 46. - № 10. - P. 314-318. - 10.3103/S106833561910004X
URI
https://www.doi.org/10.3103/S106833561910004X
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https://www.scopus.com/record/display.uri?eid=2-s2.0-85075587196&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000498473800004
https://openrepository.mephi.ru/handle/123456789/18943