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Reflectance Modification in Nanostructured Silicon Layers with Gradient Porosity

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dc.contributor.authorMussabek, G. K.
dc.contributor.authorYermukhamed, D.
dc.contributor.authorSuleimenova, Z. A.
dc.contributor.authorAssilbayeva, R. B.
dc.contributor.authorZavestovskaya, I. N.
dc.contributor.authorTimoshenko, V. Y.
dc.contributor.authorЗавестовская, Ирина Николаевна
dc.contributor.authorТимошенко, Виктор Юрьевич
dc.date.accessioned2024-11-21T15:02:03Z
dc.date.available2024-11-21T15:02:03Z
dc.date.issued2019
dc.description.abstractA significant change in effective reflectance spectra of nanostructured porous silicon layers grown with different times of metal-assisted chemical etching is detected. The low reflectances at the level of 5-10% measured in the spectral range of 200-400 nm are explained by strong elastic scattering of light in combination with absorption in silicon nanostructures, while a reflectance increase in the range of 500-1800 nm, which is visually detected as a "white" layer appearance is associated with Mie scattering in silicon nanostructures with gradient porosity under conditions of weak optical absorption. The results obtained are discussed from the viewpoint of potential applications of "black" and "white" nanocrystalline silicon in photonics and sensorics.
dc.format.extentС. 314-318
dc.identifier.citationReflectance Modification in Nanostructured Silicon Layers with Gradient Porosity / Mussabek, GK [et al.] // Bulletin of the Lebedev Physics Institute. - 2019. - 46. - № 10. - P. 314-318. - 10.3103/S106833561910004X
dc.identifier.doi10.3103/S106833561910004X
dc.identifier.urihttps://www.doi.org/10.3103/S106833561910004X
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85075587196&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000498473800004
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18943
dc.relation.ispartofBulletin of the Lebedev Physics Institute
dc.titleReflectance Modification in Nanostructured Silicon Layers with Gradient Porosity
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue10
oaire.citation.volume46
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