Персона: Бутин, Валентин Иванович
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Total dose measurements by p-channel transistors of ICs
© 2019 Published under licence by IOP Publishing Ltd. In this paper, a new approach of p-channel MOS-transistors used for total dose monitoring at semiconductor components under radiation is presented. The calibration results enable to determine the numerical parameters for the MOSFETs electro-physical model of dose effects. We propose to calculate the total dose of ionization flux using the results of MOS-transistors drain current measurements, under a fixed gate and drain voltage.
«On-line» neutron fluence registration by silicon bipolar transistor
© 2019 Published under licence by IOP Publishing Ltd. An efficient practical method of bipolar transistor application for neutron fluence registration is presented. The method is focused on the neutron fluences damage effect correlation for various sources to reference source. The bipolar transistor connection diagram and an example of device realization based on STM32 microcontroller are described. STM32 is used for providing test signals and parameter registration used for gain factor calculation of the bipolar transistors monitor (BTM). The proposed approach allows to consider the features of BTM that is pre-irradiated at reference source and their application as the neutron fluence monitors. These connection diagram and constructive solutions provide "on-line" neutron fluence registration for different sources in terms of the reference source as required for the verification of radiation test results.