Персона:
Тарараксин, Александр Сергеевич

Profile Picture
Email Address
Birth Date
Научные группы
Организационные подразделения
OrgUnit Logo
Организационная единица
Другие подразделения НИЯУ МИФИ
Структурные подразделения НИЯУ МИФИ, не включенные в состав институтов и факультетов.
Статус
Фамилия
Тарараксин
Имя
Александр Сергеевич
Имя

Фильтры

1111
2019 - 201912020 - 20212
3
3
Сброс фильтров

Настройки

Результаты поиска

Теперь показываю 1 - 3 из 3
  • Уменьшенное изображение
    Публикация
    Только метаданные
    Heavy-Ion-Induced Single Event Burnout in SiC Schottky Diodes: Safe Operating Area
    (2019) Gromova, P. S.; Davydov, G. G.; Tararaksin, A. S.; Kolosova, A. S.; Boychenko, D. V.; Давыдов, Георгий Георгиевич; Тарараксин, Александр Сергеевич; Колосова, Анна Сергеевна; Бойченко, Дмитрий Владимирович
    © 2019 IEEE.Heavy-ion-induced single event burnout (SEB) is studied experimentally for several types of 4H-SiC Schottky power diodes with various bias voltages applied. Safe operating voltage area for each type was defined and analyzed. The comparison with Si power devices was carried out.
  • Уменьшенное изображение
    Публикация
    Только метаданные
    Methodical Approach for SEL Tolerance Confirmation of CMOS ICs at Low Temperatures
    (2021) Novikova, M. M.; Novikov, A. A.; Pechenkin, A. A.; Lukashin, V. P.; Oblova, E. N.; Gritsaenko, A. R.; Protasov, D. E.; Tararaksin, A. S.; Печенкин, Александр Александрович; Лукашин, Владислав Павлович; Грицаенко, Альбина Радиковна; Протасов, Дмитрий Евгеньевич; Тарараксин, Александр Сергеевич
    An approach for SEL sensitivity estimation using heavy ions at room temperature and laser facilities both at room and subzero temperatures is proposed. The results of comparison approach approbation are also presented. © 2021 IEEE.
  • Уменьшенное изображение
    Публикация
    Только метаданные
    Single Event Burnout Sensitivity Prediction Based on Commercial MOSFET Electrical Characteristics Analysis
    (2021) Kessarinskiy, V. S.; Kessarinskiy, L. N.; Tararaksin, A. S.; Shirin, A. O.; Boychenko, D. V.; Кессаринский, Леонид Николаевич; Тарараксин, Александр Сергеевич; Ширин, Алексей Олегович; Бойченко, Дмитрий Владимирович
    © 2021 IEEE.Power MOSFET transistors are the main part of the power supply system for any equipment, including spacecraft. Modern vertical MOSFETs are designed as regular matrix structures of elementary parallel cells (mini-transistors), made according to submicron process. Single event burnout (SEB) of a vertical cell is the main mechanism for failure of vertical MOSFETs from single particle effect. In addition to SEB, there are several other reasons for the MOSFET burnout, caused by extremal bias, that are tested during manufacturing. The MOSFETs SEB sensitivity prediction model is presented. The model is based on the analysis of burnout bias characteristics from the datasheets. The comparison of experimental data and model prediction results is presented in the article. The figure of merit (FOM) for SEB sensitivity prediction is proposed. The optimal value of FOM for n-MOSFETs and LET 40 MeV cm2/mg is presented. So, the model helps to determine the most sensitive MOSFET transistors before expensive testing done.