Person: Телец, Виталий Арсеньевич
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Другие подразделения НИЯУ МИФИ
Структурные подразделения НИЯУ МИФИ, не включенные в состав институтов и факультетов.
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Телец
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Виталий Арсеньевич
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- PublicationMetadata onlyTesting for Enhanced Low Dose Rate Sensitivity and Reduced Low Dose Rate Sensitivity Bipolar Devices(2021) Pershenkov, V. S.; Felitsyn, V. A.; Bakerenkov, A. S.; Rodin, A. S.; Telets, V. A.; Belyakov, V. V.; Kovsharov, I. D.; Zhukov, A. I.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич; Ковшаров, Илья Дмитриевич; Жуков, Александр Иванович© 2021 IEEE.A possible influence of location of the effective Fermi level in the forbidden gap of the surface base region on dose rate sensitivity of bipolar integrated circuits was described. Also, it is shown, that the position of the effective Fermi level leads to different behavior of bipolar devices during post-irradiation annealing at enhanced temperature. Experimental tests on dose rate sensitive devices were provided and discussed.
- PublicationMetadata onlyReduced Low Dose Rate Sensitivity (RLDRS) in Bipolar Devices(2019) Pershenkov, V.; Bakerenkov, A.; Rodin, A.; Felitsyn, V.; Telets, V.; Belyakov, V.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич© 2019 IEEE.Possible physical mechanism of reduced low dose rate sensitivity in bipolar devices is described. The reduced sensitivity can be connected with a specific position of effective Fermi level relatively acceptor and donor radiation-induced interface traps.
- PublicationMetadata onlyExperimental Estimation of Input Offset Voltage Radiation Degradation Rate in Bipolar Operational Amplifiers(2019) Bakerenkov, A.; Pershenkov, V.; Felitsyn, V.; Rodin, A.; Telets, V.; Belyakov, V.; Zhukov, A.; Glukhov, N.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич; Жуков, Александр Иванович© 2019 IEEE.Radiation degradation rate of input offset voltage in bipolar operational amplifiers was estimated experimentally. High degradation rate was observed in devices with high input offset voltage initial values and temperature drifts. Obtained results were discussed.
- PublicationOpen AccessДОВЕРЕННАЯ ЭЛЕКТРОНИКА – «НОВАЯ ГРАЖДАНСКАЯ»?(НИЯУ МИФИ, 2024) Телец, В. А.; Телец, Виталий АрсеньевичНа фоне разработки Рабочей группой (подкомитетом) «Доверенные интегральные схемы» (РГ «ДИС») в составе 167 Технического комитета (ТК167) Росстандарта «Программно-аппаратные комплексы для критической информационной инфраструктуры и программное обеспечение для них» комплекса предварительных национальных стандартов (ПНСТ) вида «Критическая информационная инфраструктура. Доверенные интегральные схемы и электронные модули» не может не возникнуть вопрос о потенциальной принадлежности доверенной электронной компонентной базы (ДЭКБ) к какой-либо нормативно установленной категории качества: с военной приёмкой (ВП) или с приёмкой отделом технического контроля (ОТК) – соответственно, для продукции военного или народно-хозяйственного (гражданского) назначения.
- PublicationMetadata onlyCorrelation between temperature and dose rate dependences of input bias current degradation in bipolar operational amplifiers(2019) Bakerenkov, A.; Pershenkov, V.; Felitsyn, V.; Rodin, A.; Telets, V.; Belyakov, V.; Zhukov, A.; Glukhov, N.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич; Жуков, Александр Иванович© 2019 IEEE.It was demonstrated experimentally that in ELDRS-susceptible operational amplifiers elevated temperature irradiation increases degradation rate of input bias current, while in ELDRS-free devices degradation rates at room and elevated temperatures are approximately equal.
- PublicationMetadata onlyENHANCED LOW DOSE RATE SENSITIVITY (ELDRS) AND REDUCED LOW DOSE RATE SENSITIVITY (RLDRS) IN BIPOLAR DEVICES.(2020) Pershenkov, V. S.; Bakerenkov, A. S.; Rodin, A. S.; Felitsyn, V. A.; Zhukov, A. I.; Telets, V. A.; Belyakov, V. V.; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич; Жуков, Александр Иванович; Телец, Виталий Арсеньевич; Беляков, Владимир ВасильевичPossible physical mechanism of enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate sensitivity (RLDRS) in bipolar devices is described. Modification of the low dose rate conversion model is presented. The enhanced or reduced sensitivity can be connected with a specific position of the effective Fermi level relatively acceptor and donor radiation-induced interface traps. The qualitative and quantitative analysis of the low dose rate effects is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge were taken into account. It leads to dependence of the accumulation of radiation-induced oxide charge and interface traps on the dose rate. In enhancement version the ELDRS and RLDRS conversion model describes the low dose rate effect in as "true" dose rate effect.
- PublicationMetadata onlyEvaluation of radiation hardness of the bipolar devices in the space conditions(2020) Rodin, A. S.; Bakerenkov, A. S.; Felitsyn, V. A.; Pershenkov, V. S.; Telets, V. A.; Родин, Александр Сергеевич; Бакеренков, Александр Сергеевич; Телец, Виталий Арсеньевич© Springer Nature Switzerland AG 2020.Real time dependence of operation temperature, which is typical for space environment, was taken into account in the numerical simulation of radiation degradation of LM111 bipolar voltage comparator input current. The technique and results of performed numerical analyses are presented and discussed.
- PublicationMetadata only“True” dose rate effect of the eldrs conversion model(2020) Pershenkov, V. S.; Bakerenkov, A. S.; Telets, V. A.; Belyakov, V. V.; Felitsyn, V. A.; Rodin, A. S.; Бакеренков, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич; Родин, Александр Сергеевич© Springer Nature Switzerland AG 2020.Modification of the ELDRS (Enhanced Low Dose Rate Sensitivity) conversion model is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge takes into account. It leads to dependence of the accumulation of radiation-induced oxide charge and interface traps on the dose rate. In enhancement version the ELDRS conversion model describes the low dose rate effect as “true” dose rate effect.
- PublicationMetadata onlyTrue Dose Rate Effect of the ELDRS Conversional Model(2020) Pershenkov, V. S.; Zhukov, A. S.; Belyakov, V. V.; Bakerenkov, A. S.; Telets, V. A.; Felitsyn, V. A.; Rodin, A. S.; Беляков, Владимир Васильевич; Бакеренков, Александр Сергеевич; Телец, Виталий Арсеньевич; Родин, Александр СергеевичThe possible physical mechanism of true dose rate effect is described using ELDRS conversional model. The effect of the oxide trapped charge on the value of the oxide electric field is taken into account. © 2020 IEEE.
- PublicationMetadata onlyRadiation Hardened Analog-to-Digital Convertor with Automatic Offset Voltage Compensation(2019) Felitsyn, V. A.; Bakerenkov, A. S.; Zhukov, A. I.; Butuzov, V. A.; Bocharov, Y. I.; Pershenkov, V. S.; Rodin, A. S.; Telets, V. A.; Belyakov, V. V.; Бакеренков, Александр Сергеевич; Жуков, Александр Иванович; Бутузов, Владимир Алексеевич; Бочаров, Юрий Иванович; Родин, Александр Сергеевич; Телец, Виталий Арсеньевич; Беляков, Владимир Васильевич© 2019 IEEE.Radiation hardened ADC with automatic offset voltage compensation was developed. TID radiation effect in the ADC was investigated at different temperatures. The designed ADC devices demonstrate high radiation hardness. Up to total dose level 100 krad(Si) any significant radiation induced drift didn't observed in transfer characteristics of all irradiated devices. It is achieved by using techniques such as application of automatic offset voltage compensation circuit together with enclosed layout transistors (ELT), located in ADC control logic. Also, edge-less n-channel MOSFETs with additional guard rings were used to increase the radiation hardness of digital interface and control logic of ADC. In contrast with control logic ELT not used in interface logic. Thus significant degradation of digital interface power supply current was observed unlike control logic power supply. Developed device can be considered as a good technical decision for self-diagnostic systems of electronic devices proposed for application under ionizing radiation impact, especially for systems of spacecrafts and satellites.