Персона: Клочков, Алексей Николаевич
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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Алексей Николаевич
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- ПубликацияОткрытый доступTHZ QUANTUM CASCADE LASERS WITH TWO-PHOTON DESIGN(НИЯУ МИФИ, 2023) Khabibullin, R. A.; Pushkarev, S. S.; Galie, R. R.; Ponomarev, D. S.; Vasil’evskii, I. S.; Vinichenko, A. N.; Klochkov, A. N.; Bagaev, T. A.; Ladugin, M. A.; Marmalyuk, A. A.; Maremyanin, K. V.; Gavrilenko, V. I.; Ushakov, D. V.; Afonenko, A. A.; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич; Васильевский, Иван СергеевичThe possibility of implementing two radiation transitions in the gain module for THz QCL has been shown many times [1,2]. However, the activation of these transitions is achieved at diff erent bias points, which corresponds to the optimal alignment of energy levels for each transition. We propose to add an additional step to the ladder of energy levels in the gain module, equal to the energy of THz photon. Due to the low energy of THz photon, it becomes possible to design the gain module based on the conventional GaAs/Al0.15Ga0.85As heterojunction with two-photon emission at one bias point.
- ПубликацияТолько метаданныеSilicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra(2020) Galiev, G. B.; Klimov, E. A.; Pushkarev, S. S.; Zaytsev, A. A.; Klochkov, A. N.; Клочков, Алексей Николаевич© 2020, Pleiades Publishing, Ltd.Abstract: The results of studies of the surface morphology, electrical characteristics, and photoluminescence properties of epitaxial GaAs films grown by molecular-beam epitaxy on GaAs(110) substrates and doped with Si are reported. A series of samples is grown at a temperature of 580°C with the arsenic/gallium flow ratio in the range from 14 to 80. By analyzing the photoluminescence spectra of the samples, the behavior of Si atoms in GaAs is interpreted with consideration for the occupation of Ga or As sites by Si atoms (i.e., for the formation of SiGa and SiAs point defects) and the formation of vacancies of arsenic and gallium VAs and VGa. In the analysis, the photoluminescence spectra of the samples on (110)-oriented substrates are compared with the photoluminescence spectra of similar samples on (100)- and (111)A-oriented substrates.
- ПубликацияТолько метаданныеTHz quantum cascade lasers with two-photon emission in the gain module(2022) Khabibullin, R. A.; Pushkarev, S. S.; Galiev, R. R.; Ponomarev, D. S.; Vasil'evskii, I. S.; Vinichenko, A. N.; Klochkov, A. N.; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич; Клочков, Алексей НиколаевичA new lasing scheme with sequential two-photon emission in the gain module for terahertz quantum cascade laser (THz QCL) is proposed and experimentally demonstrated. THz QCLs based on MBE-and MOCVD-grown structures with two-photon design have a lasing frequency of 3.8 THz and maximum operation temperature around 100 K. © 2022 IEEE.
- ПубликацияТолько метаданныеStructural Properties of {LTG-GaAs/GaAs:Si} Superlattices on GaAs(100) and (111)A Substrates(2022) Galiev, G. B.; Vasil'evskii, I. S.; Vinichenko, A. N.; Grekhov, M. M.; Klochkov, A. N.; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич; Клочков, Алексей Николаевич
- ПубликацияТолько метаданныеEffect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates(2022) Klimov, E. A.; Klochkov, A. N.; Pushkarev, S. S.; Клочков, Алексей Николаевич
- ПубликацияТолько метаданные3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K(2022) Khabibullin, R. A.; Maremyanin, K. V.; Ponomarev, D. S.; Galiev, R. R.; Vasil'evskii, I. S.; Vinichenko, A. N.; Klochkov, A. N.; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич; Клочков, Алексей Николаевич© 2022, Pleiades Publishing, Ltd.Abstract—: The design of a terahertz (THz) quantum cascade laser (QCL) with an active module based on three GaAs/Al0.18Ga0.82As quantum wells for high-temperature generation at a frequency of about 3.3 THz is optimized. A heterostructure based on the developed design with an active region thickness of 10 μm is grown by molecular-beam epitaxy with a deviation of the active-module thickness from the nominal of less than 1%. The fabricated THz QCLs with a double metal waveguide demonstrate lasing up to a temperature of 125 K. Investigations of the I–V characteristics, the dependences of the integrated emission on the current, and the lasing spectra show good agreement with the calculated characteristics.
- ПубликацияТолько метаданныеComparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures(2022) Vasilkova, E. I.; Klochkov, A. N.; Vinichenko, A. N.; Kargin, N. I.; Vasil'evskii, I. S.; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич; Каргин, Николай Иванович; Васильевский, Иван СергеевичThe effect of 5 min high-temperature thermal annealing on InGaAs/GaAs strained superlattices and InGaAs/ AlGaAs PHEMT structures grown by molecular beam epitaxy was studied using the Hall measurements, pho-toluminescence spectroscopy, and high-resolution X-ray diffraction. InGaAs/GaAs superlattices are shown to undergo photoluminescence peak energy blueshift after 700 degrees C annealing and distinguishable heterointerface roughening after 800 degrees C annealing. The magnitude of quantum well smoothing, caused by annealing induced III-group atom interdiffusion, was estimated experimentally using secondary ion mass spectrometry and X-ray reflectivity, and calculated from the modelled electron energy spectra in the diffused wells. InGaAs/AlGaAs PHEMTs appear to be more sensitive to annealing, demonstrating optical and structural changes of a similar nature to InGaAs/GaAs heterostructures, as well as transport properties degradation, at a wider range of annealing temperatures starting 500 degrees C.
- ПубликацияТолько метаданныеSi-Doping of Low-Temperature-Grown GaAs Heterostructures on (100) and (111)A GaAs Substrates(2023) Klochkov, A. N.; Galiev, G. B.; Klimov, E. A.; Pushkarev, S. S.; Клочков, Алексей Николаевич
- ПубликацияТолько метаданныеSurface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates(2023) Klimov, E. A.; Pushkarev, S. S.; Klochkov, A. N.; Mozhaeva, M. O.; Клочков, Алексей Николаевич
- ПубликацияТолько метаданныеElectron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit(2021) Safonov, D. A.; Klochkov, A. N.; Vinichenko, A.; Sibirmovsky, Y. D.; Kargin, N. I.; Vasil'evskii, I. S.; Сафонов, Данил Андреевич; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич; Сибирмовский, Юрий Дмитриевич; Каргин, Николай Иванович; Васильевский, Иван Сергеевич© 2021The dependence of electron transport properties of two-dimensional electron gas on sheet doping concentration in one-sided δ-doped pseudomorphic AlxGa1-xAs/In0.2Ga0.8As/GaAs quantum wells is investigated. The wide range of silicon dopant sheet concentrations of (1.6–16) · 1012 cm−2 is investigated. Electron effective masses, nonparabolicity and scattering times are determined by low-temperature Shubnikov-de Haas effect measurements. The dependence of the quantum and transport relaxation times on nH is shown to have nonmonotonic character due to the competition of the Fermi momentum increase and the large angle scattering due to the variation of ionized donor concentration. The nonparabolicity coefficient in the In0.2Ga0.8As quantum well is determined to be 0.68 1/eV.