Персона: Клочков, Алексей Николаевич
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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Алексей Николаевич
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21 results
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- ПубликацияОткрытый доступTHZ QUANTUM CASCADE LASERS WITH TWO-PHOTON DESIGN(НИЯУ МИФИ, 2023) Khabibullin, R. A.; Pushkarev, S. S.; Galie, R. R.; Ponomarev, D. S.; Vasil’evskii, I. S.; Vinichenko, A. N.; Klochkov, A. N.; Bagaev, T. A.; Ladugin, M. A.; Marmalyuk, A. A.; Maremyanin, K. V.; Gavrilenko, V. I.; Ushakov, D. V.; Afonenko, A. A.; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич; Васильевский, Иван СергеевичThe possibility of implementing two radiation transitions in the gain module for THz QCL has been shown many times [1,2]. However, the activation of these transitions is achieved at diff erent bias points, which corresponds to the optimal alignment of energy levels for each transition. We propose to add an additional step to the ladder of energy levels in the gain module, equal to the energy of THz photon. Due to the low energy of THz photon, it becomes possible to design the gain module based on the conventional GaAs/Al0.15Ga0.85As heterojunction with two-photon emission at one bias point.
- ПубликацияОткрытый доступDYNAMICS OF CHARGE CARRIERS IN THZ PHOTOCONDUCTIVE ANTENNAS BASED ON SI-DOPED GAAS (111)A(НИЯУ МИФИ, 2023) Galiev, G.; Klimov, E.; Pushkarev, S.; Yuzeeva, N.; Klochkov, A.; Solyankin, P.; Shkurinov, A.; Клочков, Алексей НиколаевичThe planar photoconductive dipole antennas (PCAs) with 20 μm gap were fabricated by photolithography on the following photoconductive materials: GaAs:Si layer 0.86 μm thick grown by molecular beam epitaxy on GaAs (111)A substrate at 380 °C (sample # 1000), i-GaAs layer 1.01 μm thick grown on GaAs (100) and (111)A substrates at 240 °C (LTG-GaAs, samples # 27V). Samples 27V were annealed at a temperature of 560 °C for 30’ in an As4 fl ow, sample 1000 wasn’t annealed.
- ПубликацияТолько метаданныеTerahertz photoconductive antenna with embedded electrodes: Simulation and experiment(2020) Khartaeva, E.; Nomoev, S.; Vasilevskii, I.; Klochkov, A.; Vinichenko, A.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич© Published under licence by IOP Publishing Ltd.The paper presents the results of numerical simulation of a terahertz (THz) photoconductive antenna with embedded electrodes by the finite element method. The simulation results indicate the fact that the proposed THz antenna has a higher photocurrent than the conventional photoconductive antenna with conventional electrode contacts. Higher THz power can potentially be obtained using the proposed photoconductive antenna with embedded electrodes. The simulation results show that the electric field strength at the surface is higher for conventional PCA, however, the PCA depth with embedded contacts has a higher electric field strength. The simulation results show that the increase in the photocurrent is directly proportional to the thickness of the embedded contacts. The results of the performed experiments are consistent with the conclusions of the simulation.
- ПубликацияТолько метаданныеSilicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra(2020) Galiev, G. B.; Klimov, E. A.; Pushkarev, S. S.; Zaytsev, A. A.; Klochkov, A. N.; Клочков, Алексей Николаевич© 2020, Pleiades Publishing, Ltd.Abstract: The results of studies of the surface morphology, electrical characteristics, and photoluminescence properties of epitaxial GaAs films grown by molecular-beam epitaxy on GaAs(110) substrates and doped with Si are reported. A series of samples is grown at a temperature of 580°C with the arsenic/gallium flow ratio in the range from 14 to 80. By analyzing the photoluminescence spectra of the samples, the behavior of Si atoms in GaAs is interpreted with consideration for the occupation of Ga or As sites by Si atoms (i.e., for the formation of SiGa and SiAs point defects) and the formation of vacancies of arsenic and gallium VAs and VGa. In the analysis, the photoluminescence spectra of the samples on (110)-oriented substrates are compared with the photoluminescence spectra of similar samples on (100)- and (111)A-oriented substrates.
- ПубликацияТолько метаданныеTHz quantum cascade lasers with two-photon emission in the gain module(2022) Khabibullin, R. A.; Pushkarev, S. S.; Galiev, R. R.; Ponomarev, D. S.; Vasil'evskii, I. S.; Vinichenko, A. N.; Klochkov, A. N.; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич; Клочков, Алексей НиколаевичA new lasing scheme with sequential two-photon emission in the gain module for terahertz quantum cascade laser (THz QCL) is proposed and experimentally demonstrated. THz QCLs based on MBE-and MOCVD-grown structures with two-photon design have a lasing frequency of 3.8 THz and maximum operation temperature around 100 K. © 2022 IEEE.
- ПубликацияТолько метаданныеImproving the efficiency of terahertz antennas on topological insulators(2022) Kovaleva, P. M.; Kuznetsov, K. A.; Lavrukhin, D. V.; Klochkov, A. A.; Goncharov, Yu. G.; Kuznetsov, P. I.; Kitaeva, G. Kh.; Клочков, Алексей НиколаевичWe study photoconductive antennas based on thin film of topological insulator and semiconductor heterostructure. A shift of the spectrum of a dipole antenna on a topological insulator to the long-wavelength region was found in comparison with a similar semiconductor antenna. Ways to increase the efficiency due to the deposition of plasmon gratings, as well as controlling the frequency response by changing the antenna impedance will be discussed. © 2022 IEEE.
- ПубликацияТолько метаданныеStructural Properties of {LTG-GaAs/GaAs:Si} Superlattices on GaAs(100) and (111)A Substrates(2022) Galiev, G. B.; Vasil'evskii, I. S.; Vinichenko, A. N.; Grekhov, M. M.; Klochkov, A. N.; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич; Клочков, Алексей Николаевич
- ПубликацияТолько метаданныеEffect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates(2022) Klimov, E. A.; Klochkov, A. N.; Pushkarev, S. S.; Клочков, Алексей Николаевич
- ПубликацияТолько метаданные3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K(2022) Khabibullin, R. A.; Maremyanin, K. V.; Ponomarev, D. S.; Galiev, R. R.; Vasil'evskii, I. S.; Vinichenko, A. N.; Klochkov, A. N.; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич; Клочков, Алексей Николаевич© 2022, Pleiades Publishing, Ltd.Abstract—: The design of a terahertz (THz) quantum cascade laser (QCL) with an active module based on three GaAs/Al0.18Ga0.82As quantum wells for high-temperature generation at a frequency of about 3.3 THz is optimized. A heterostructure based on the developed design with an active region thickness of 10 μm is grown by molecular-beam epitaxy with a deviation of the active-module thickness from the nominal of less than 1%. The fabricated THz QCLs with a double metal waveguide demonstrate lasing up to a temperature of 125 K. Investigations of the I–V characteristics, the dependences of the integrated emission on the current, and the lasing spectra show good agreement with the calculated characteristics.
- ПубликацияТолько метаданныеComparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures(2022) Vasilkova, E. I.; Klochkov, A. N.; Vinichenko, A. N.; Kargin, N. I.; Vasil'evskii, I. S.; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич; Каргин, Николай Иванович; Васильевский, Иван СергеевичThe effect of 5 min high-temperature thermal annealing on InGaAs/GaAs strained superlattices and InGaAs/ AlGaAs PHEMT structures grown by molecular beam epitaxy was studied using the Hall measurements, pho-toluminescence spectroscopy, and high-resolution X-ray diffraction. InGaAs/GaAs superlattices are shown to undergo photoluminescence peak energy blueshift after 700 degrees C annealing and distinguishable heterointerface roughening after 800 degrees C annealing. The magnitude of quantum well smoothing, caused by annealing induced III-group atom interdiffusion, was estimated experimentally using secondary ion mass spectrometry and X-ray reflectivity, and calculated from the modelled electron energy spectra in the diffused wells. InGaAs/AlGaAs PHEMTs appear to be more sensitive to annealing, demonstrating optical and structural changes of a similar nature to InGaAs/GaAs heterostructures, as well as transport properties degradation, at a wider range of annealing temperatures starting 500 degrees C.
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