Publication: DYNAMICS OF CHARGE CARRIERS IN THZ PHOTOCONDUCTIVE ANTENNAS BASED ON SI-DOPED GAAS (111)A
Дата
2023
Авторы
Galiev, G.
Klimov, E.
Pushkarev, S.
Yuzeeva, N.
Klochkov, A.
Solyankin, P.
Shkurinov, A.
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НИЯУ МИФИ
Аннотация
The planar photoconductive dipole antennas (PCAs) with 20 μm gap were fabricated by photolithography on the following photoconductive materials: GaAs:Si layer 0.86 μm thick grown by molecular beam epitaxy on GaAs (111)A substrate at 380 °C (sample # 1000), i-GaAs layer 1.01 μm thick grown on GaAs (100) and (111)A substrates at 240 °C (LTG-GaAs, samples # 27V). Samples 27V were annealed at a temperature of 560 °C for 30’ in an As4 fl ow, sample 1000 wasn’t annealed.
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Galiev, G. et. all Dynamics of charge carriers in thz photoconductive antennas based on si-doped GaAs (111)A: thesis // The 5-th lnternational Conference "Terahertz and Microwave Radiation: Generation, Detection and Applications" (ТЕRА-2023). Abstract book. Moscow, 2023. P. 18-19