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DYNAMICS OF CHARGE CARRIERS IN THZ PHOTOCONDUCTIVE ANTENNAS BASED ON SI-DOPED GAAS (111)A

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dc.contributor.authorGaliev, G.
dc.contributor.authorKlimov, E.
dc.contributor.authorPushkarev, S.
dc.contributor.authorYuzeeva, N.
dc.contributor.authorKlochkov, A.
dc.contributor.authorSolyankin, P.
dc.contributor.authorShkurinov, A.
dc.contributor.authorКлочков, Алексей Николаевич
dc.date.accessioned2024-10-22T10:55:17Z
dc.date.available2024-10-22T10:55:17Z
dc.date.issued2023
dc.description.abstractThe planar photoconductive dipole antennas (PCAs) with 20 μm gap were fabricated by photolithography on the following photoconductive materials: GaAs:Si layer 0.86 μm thick grown by molecular beam epitaxy on GaAs (111)A substrate at 380 °C (sample # 1000), i-GaAs layer 1.01 μm thick grown on GaAs (100) and (111)A substrates at 240 °C (LTG-GaAs, samples # 27V). Samples 27V were annealed at a temperature of 560 °C for 30’ in an As4 fl ow, sample 1000 wasn’t annealed.
dc.identifier.citationGaliev, G. et. all Dynamics of charge carriers in thz photoconductive antennas based on si-doped GaAs (111)A: thesis // The 5-th lnternational Conference "Terahertz and Microwave Radiation: Generation, Detection and Applications" (ТЕRА-2023). Abstract book. Moscow, 2023. P. 18-19
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/15697
dc.language.isoen
dc.publisherНИЯУ МИФИ
dc.titleDYNAMICS OF CHARGE CARRIERS IN THZ PHOTOCONDUCTIVE ANTENNAS BASED ON SI-DOPED GAAS (111)A
dc.typeThesis
dspace.entity.typePublication
relation.isAuthorOfPublication92f74a44-ec8c-4833-bca6-f7f6ba0caf85
relation.isAuthorOfPublication.latestForDiscovery92f74a44-ec8c-4833-bca6-f7f6ba0caf85
relation.isOrgUnitOfPublication06e1796d-4f55-4057-8d7e-bb2f3b5676f5
relation.isOrgUnitOfPublication.latestForDiscovery06e1796d-4f55-4057-8d7e-bb2f3b5676f5
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2023_5-я Конференция с международным участием «Терагерцевое и микроволновое излучение: генерация, детектирование и приложения» (ТЕРА-2023)