Персона: Виниченко, Александр Николаевич
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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Александр Николаевич
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- ПубликацияТолько метаданныеElectron-Quantum Transport in Pseudomorphic and Metamorphic In 0.2 Ga 0.8 As-Based Quantum Wells(2019) Vinichenko, A. N.; Safonov, D. A.; Kargin, N. I.; Vasil'evskii, I. S.; Виниченко, Александр Николаевич; Сафонов, Данил Андреевич; Каргин, Николай Иванович; Васильевский, Иван Сергеевич© 2019, Pleiades Publishing, Ltd. Abstract: Metamorphic high-electron-mobility transistor (HEMT) structures based on deep In 0.2 Ga 0.8 As/In 0.2 Al 0.8 As quantum wells (0.7 eV for Γ electrons) with different metamorphic buffer designs are implemented and investigated for the first time. The electronic properties of metamorphic and pseudomorphic HEMT structures with the same doping are compared. It is found that, over a temperature range of 4–300 K, both the electron mobility and concentration in the HEMT structure with a linear metamorphic buffer are higher than those in the pseudomorphic HEMT structure due to an increase in the depth of the quantum well. Low-temperature magnetotransport measurements demonstrate that the quantum momentum-relaxation time decreases considerably in metamorphic HEMT structures because of enhanced small-angle scattering resulting from structural defects and inhomogeneities, while the dominant scattering mechanism in structures of both types is still due to remote ionized impurities.
- ПубликацияТолько метаданныеDonor ionization tuning in AlGaAs/InGaAs/GaAs PHEMT quantum wells with AlAs nanolayers in spacer(2019) Safonov, D. A.; Vinichenko, A. N.; Sibirmovsky, Yu. D.; Kargin, N. I.; Vasil'evskii, I. S.; Сафонов, Данил Андреевич; Виниченко, Александр Николаевич; Сибирмовский, Юрий Дмитриевич; Каргин, Николай Иванович; Васильевский, Иван Сергеевич© 2019 Published under licence by IOP Publishing Ltd. A comparison of the electron transport properties of pseudomorphic quantum well AlxGa1-xAs/In0.2Ga0.8As/GaAs with those of conventional donor layer (x = 0.15 and x = 0.25) and with AlAs nanoinserts around the delta-Si layer or AlAs: delta-Si donor layer is presented. The structures with added AlAs layers exhibit electron concentration decrease, combined with increased electron mobility. This effect is related to the suppression of remote ionized impurity electron scattering, change of band structure and decreasing efficiency of silicon atoms doping when incorporating in pure AlAs.
- ПубликацияТолько метаданныеComparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures(2022) Vasilkova, E. I.; Klochkov, A. N.; Vinichenko, A. N.; Kargin, N. I.; Vasil'evskii, I. S.; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич; Каргин, Николай Иванович; Васильевский, Иван СергеевичThe effect of 5 min high-temperature thermal annealing on InGaAs/GaAs strained superlattices and InGaAs/ AlGaAs PHEMT structures grown by molecular beam epitaxy was studied using the Hall measurements, pho-toluminescence spectroscopy, and high-resolution X-ray diffraction. InGaAs/GaAs superlattices are shown to undergo photoluminescence peak energy blueshift after 700 degrees C annealing and distinguishable heterointerface roughening after 800 degrees C annealing. The magnitude of quantum well smoothing, caused by annealing induced III-group atom interdiffusion, was estimated experimentally using secondary ion mass spectrometry and X-ray reflectivity, and calculated from the modelled electron energy spectra in the diffused wells. InGaAs/AlGaAs PHEMTs appear to be more sensitive to annealing, demonstrating optical and structural changes of a similar nature to InGaAs/GaAs heterostructures, as well as transport properties degradation, at a wider range of annealing temperatures starting 500 degrees C.
- ПубликацияТолько метаданныеInfluence of silicon donor doping on electron transport in quantum wells AlGaAs/InGaAs/GaAs at different temperatures(2019) Safonov, D. A.; Vinichenko, A. N.; Kargin, N. I.; Vasil'Evskii, I. S.; Сафонов, Данил Андреевич; Виниченко, Александр Николаевич; Каргин, Николай Иванович; Васильевский, Иван Сергеевич© Published under licence by IOP Publishing Ltd. Electron transport in single delta-Si doped pseudomorphic quantum wells with increasing donor concentration analyzed in a temperature range 2-300K. Hall effect and Shubnikov-de Haas oscillations studied at low temperatures. Temperature dependences of electron sheet concentration differ: samples with higher doping show significant increase of electron consentration at high temperature, while for the lightly doped it has a minor temperature sensitivity due to the band peculiarities of donor ionization. Electron mobility increases and then decreases at higher electron concentration, although the second quantum well subband remains unpopulated.
- ПубликацияТолько метаданныеInvestigation of semiconducting materials for magnetic field sensors in strong magnetic fields under cryogenic temperatures(2019) Kuech, T.; Rogacki, K.; Bolshakova, I.; Kost, Y.; Vasil'Evskii, I.; Vinichenko, A.; Strikhanov, M.; Kargin, N.; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич; Стриханов, Михаил Николаевич; Каргин, Николай Иванович© Published under licence by IOP Publishing Ltd. Influence of strong magnetic fields B 3 T under cryogenic temperatures (1.5,4.2) K on the signals of Hall sensors based on single-crystal whiskers (InSb, InAs) and nano-sized heterostructures (InSb/i-GaAs, InAs/i-GaAs) have been investigated. There are distinct Shubnikov - de Haas oscillations for whisker-based sensors, whereas heterostructures-based sensors demonstrate the linear field dependence of the output signal. This difference explained by the higher concentration of structure defects in the heterostructures. The derived results confirm the operability of Hall sensors based on indicated heterostructures for the magnetic fields diagnostics in the temperature and field conditions of modern particle accelerators and fusion reactors.
- ПубликацияТолько метаданныеMokerov Readings 2016 & Mokerov Readings 2017(2019) Kulbachinskii, V.; Ponomarev, D.; Khabibullin, R.; Kargin, N.; Vasil'Evskii, I.; Vinichenko, A.; Martirosova, G.; Каргин, Николай Иванович; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич; Мартиросова, Галина Рафаиловна
- ПубликацияТолько метаданныеElectron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit(2021) Safonov, D. A.; Klochkov, A. N.; Vinichenko, A.; Sibirmovsky, Y. D.; Kargin, N. I.; Vasil'evskii, I. S.; Сафонов, Данил Андреевич; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич; Сибирмовский, Юрий Дмитриевич; Каргин, Николай Иванович; Васильевский, Иван Сергеевич© 2021The dependence of electron transport properties of two-dimensional electron gas on sheet doping concentration in one-sided δ-doped pseudomorphic AlxGa1-xAs/In0.2Ga0.8As/GaAs quantum wells is investigated. The wide range of silicon dopant sheet concentrations of (1.6–16) · 1012 cm−2 is investigated. Electron effective masses, nonparabolicity and scattering times are determined by low-temperature Shubnikov-de Haas effect measurements. The dependence of the quantum and transport relaxation times on nH is shown to have nonmonotonic character due to the competition of the Fermi momentum increase and the large angle scattering due to the variation of ionized donor concentration. The nonparabolicity coefficient in the In0.2Ga0.8As quantum well is determined to be 0.68 1/eV.