Персона: Виниченко, Александр Николаевич
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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- ПубликацияОткрытый доступМЕТРОЛОГИЧЕСКОЕ ОБЕСПЕЧЕНИЕ ТЕХНОЛОГИИ PHEMT НАНОГЕТЕРОСТРУКТУР AlGaAs/InGaAs/GaAs(НИЯУ МИФИ, 2012) Васильевский, И. С.; Виниченко, А. Н.; Галиев, Г. Б.; Грехов, М. М.; Щербачев, К. Д.; Сарайкин, В. Д.; Лаврухин, Д. В.; Каргин, Н. И.; Стриханов, М. Н.; Васильевский, Иван Сергеевич; Стриханов, Михаил Николаевич; Виниченко, Александр Николаевич; Каргин, Николай Иванович; Щербачев, Олег ВячеславовичРНЕМТ AlxGa1-xAs/InyGa1-yAs гетероструктуры являются одним из самых широко используемых базовых материалов в СВЧ электронике для создания транзисторов и монолитных интегральных схем (МИС). Данные структуры содержат большое число слоев, как основных, так и вспомогательных, из твердых растворов AlxGa1-xAs и InyGa1-yAs. Для получения требуемой зонной структуры и характеристик образцов необходимо жестко контролировать состав и толщину данных слоев. Цель работы состояла в реализации технологии РНЕМТ гетероструктур с использованием методов нанометрологии, обеспечивающими точность и воспроизводимость технологических параметров не хуже 95%. Для роста на установке МЛЭ Riber Compact 21T использовались импортные ОСЧ металлы производства Azelis Electronics. Предельный вакуум в камере роста при замороженных криопанелях и с перекрытым потоком As4 составлял до 1-2х10-11 Торр. Одним из важных факторов получения стабильной и воспроизводимой скорости роста, состава и толщины слоев РНЕМТ гетероструктур являлось получение долговременной стабильности потоков и учет быстрых переходных процессов при открытии заслонок.
- ПубликацияОткрытый доступTHZ QUANTUM CASCADE LASERS WITH TWO-PHOTON DESIGN(НИЯУ МИФИ, 2023) Khabibullin, R. A.; Pushkarev, S. S.; Galie, R. R.; Ponomarev, D. S.; Vasil’evskii, I. S.; Vinichenko, A. N.; Klochkov, A. N.; Bagaev, T. A.; Ladugin, M. A.; Marmalyuk, A. A.; Maremyanin, K. V.; Gavrilenko, V. I.; Ushakov, D. V.; Afonenko, A. A.; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич; Васильевский, Иван СергеевичThe possibility of implementing two radiation transitions in the gain module for THz QCL has been shown many times [1,2]. However, the activation of these transitions is achieved at diff erent bias points, which corresponds to the optimal alignment of energy levels for each transition. We propose to add an additional step to the ladder of energy levels in the gain module, equal to the energy of THz photon. Due to the low energy of THz photon, it becomes possible to design the gain module based on the conventional GaAs/Al0.15Ga0.85As heterojunction with two-photon emission at one bias point.
- ПубликацияТолько метаданныеAn advanced approach to control the electro-optical properties of LT-GaAs-based terahertz photoconductive antenna(2020) Buryakov, A. M.; Ivanov, M. S.; Khusyainov, D. I.; Mishina, E. D.; Nomoev, S. A.; Vasil'evskii, I. S.; Vinichenko, A. N.; Kozlovskii, K. I.; Chistyakov, A. A.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич; Козловский, Константин Иванович; Чистяков, Александр Александрович© 2019 Elsevier LtdThis work reports on an advanced approach to the design of THz photoconductive. antenna (PCA). The LT-GaAs thin films used for the PCA fabrication were synthesized by MBE method on GaAs (100) substrate by adjusting the As pressure, As/Ga fluxes ratio, growth/annealing temperatures and annealing time. These parameters crucially affect electro-optical properties of the PCA samples as evidenced by the THz radiation power and time-domain spectroscopy measurements. The annealing temperature of 670 °C was found to be optimal for constructing a PCA possessing high amplitude of the THz radiation over the spectral range up to 1 THz at the resonance of 0.1 THz. The comparison of this PCA with the reference ZnTe crystal reveals a 2-fold increase in THz power. Furthermore, this antenna attains a 1.5-, 3-, and 2-fold increase in THz power, photocurrent efficiency, and actuating dc BV, as compared with the commercial ZOMEGA antenna. These results pave the way towards the creation of highly efficient LT-GaAs-based PCAs.
- ПубликацияТолько метаданныеTerahertz photoconductive antenna with embedded electrodes: Simulation and experiment(2020) Khartaeva, E.; Nomoev, S.; Vasilevskii, I.; Klochkov, A.; Vinichenko, A.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич© Published under licence by IOP Publishing Ltd.The paper presents the results of numerical simulation of a terahertz (THz) photoconductive antenna with embedded electrodes by the finite element method. The simulation results indicate the fact that the proposed THz antenna has a higher photocurrent than the conventional photoconductive antenna with conventional electrode contacts. Higher THz power can potentially be obtained using the proposed photoconductive antenna with embedded electrodes. The simulation results show that the electric field strength at the surface is higher for conventional PCA, however, the PCA depth with embedded contacts has a higher electric field strength. The simulation results show that the increase in the photocurrent is directly proportional to the thickness of the embedded contacts. The results of the performed experiments are consistent with the conclusions of the simulation.
- ПубликацияТолько метаданныеTHz Radiation of Photoconductive Antennas based on {LT-GaAa/GaAa:Si} Superlattice Structures(2020) Klochkov, A. N.; Klimov, E. A.; Solyankin, P. M.; Konnikova, M. R.; Vasil'evskii, I. S.; Vinichenko, A. N.; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич© 2020, Pleiades Publishing, Ltd.Abstract: A material in the form of a multilayer structure based on low-temperature LT-GaAs grown on (111)A-oriented substrates is proposed for fabrication of THz photoconductive antennas. These structures contain active LT-GaAs layers and doping acceptor GaAs:Si-based layers. At the optical pump power of 19 mW and the bias voltage of 30 V, a photoconductive antenna based on the optimized {LT-GaAs/GaAs:Si} (111)A structure emits THz pulses with the average power of 2.3 μW at the pulse repetition frequency of 80 MHz; the conversion efficiency is 1.2 × 10–4. It is shown that the dependence of the integral power of THz pulses of the antenna based on the {LT-GaAs/GaAs:Si} (111)A structure on the applied voltage is superlinear; the dependence of this parameter on the optical pump power is plotted as a curve with saturation. It is shown that the designed antennas have a practical application in THz spectroscopy of biological solutions.
- ПубликацияТолько метаданныеThe research for approaches to increase power of the compact thz emitters based on low-temperature gallium arsenide heterostructures(2020) Nomoev, S.; Vasilevskii, I.; Vinichenko, A.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич© 2020 Trans Tech Publications Ltd, SwitzerlandThe design and technological conditions for the manufacture of photoconductive antennas based on low-temperature gallium arsenide (LT-GaAs) have been developed. The optimized photoconductive THz antenna is made based on LT-GaAs with the flag geometry of the contacts and with the interdigitated structure including metal closing through the dielectric of each second period. LT-GaAs samples were obtained by molecular beam epitaxy at temperatures of 210 ̊C, 230 ̊C, 240 ̊C on GaAs substrates (100). Dark and photocurrent were measured depending on the bias voltage of the LT-GaAs heterostructure at the EP6 probe station. Full wave finite element method solver has been used to investigate the proposed plasmon PCA electrical and optical behavior by combining the Maxwell's wave equation with the drift-diffusion/Poisson equations.
- ПубликацияТолько метаданныеNew Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111) A Substrate(2019) Galiev, G. B.; Trunkin, I. N.; Vasiliev, A. L.; Klimov, E. A.; Vasil'evskii, I. S.; Vinichenko, A. N.; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич© 2019, Pleiades Publishing, Inc.Abstract: The structural characteristics of a new structure for photoconductive antennas have been investigated. This structure is a multilayered epitaxial film grown on a GaAs(111)A substrate; it consists of alternating undoped low-temperature grown GaAs (LTG-GaAs) layers and GaAs layers synthesized in the standard high-temperature regime and doped with silicon (GaAs:Si). The As4/Ga flow ratio γ is chosen such as to produce p-type GaAs:Si layers. LTG-GaAs layers were grown at an enlarged γ value. The samples grown on GaAs(100) substrates were single-crystal, whereas the single-crystal growth on GaAs(111)A substrates changed to polycrystalline when the film thickness reached 320–340 nm. The sizes of As precipitates in annealed samples, their distribution over the film thickness, and specific features of their crystal structure have been analyzed.
- ПубликацияТолько метаданныеElectron-Quantum Transport in Pseudomorphic and Metamorphic In 0.2 Ga 0.8 As-Based Quantum Wells(2019) Vinichenko, A. N.; Safonov, D. A.; Kargin, N. I.; Vasil'evskii, I. S.; Виниченко, Александр Николаевич; Сафонов, Данил Андреевич; Каргин, Николай Иванович; Васильевский, Иван Сергеевич© 2019, Pleiades Publishing, Ltd. Abstract: Metamorphic high-electron-mobility transistor (HEMT) structures based on deep In 0.2 Ga 0.8 As/In 0.2 Al 0.8 As quantum wells (0.7 eV for Γ electrons) with different metamorphic buffer designs are implemented and investigated for the first time. The electronic properties of metamorphic and pseudomorphic HEMT structures with the same doping are compared. It is found that, over a temperature range of 4–300 K, both the electron mobility and concentration in the HEMT structure with a linear metamorphic buffer are higher than those in the pseudomorphic HEMT structure due to an increase in the depth of the quantum well. Low-temperature magnetotransport measurements demonstrate that the quantum momentum-relaxation time decreases considerably in metamorphic HEMT structures because of enhanced small-angle scattering resulting from structural defects and inhomogeneities, while the dominant scattering mechanism in structures of both types is still due to remote ionized impurities.
- ПубликацияТолько метаданныеDonor ionization tuning in AlGaAs/InGaAs/GaAs PHEMT quantum wells with AlAs nanolayers in spacer(2019) Safonov, D. A.; Vinichenko, A. N.; Sibirmovsky, Yu. D.; Kargin, N. I.; Vasil'evskii, I. S.; Сафонов, Данил Андреевич; Виниченко, Александр Николаевич; Сибирмовский, Юрий Дмитриевич; Каргин, Николай Иванович; Васильевский, Иван Сергеевич© 2019 Published under licence by IOP Publishing Ltd. A comparison of the electron transport properties of pseudomorphic quantum well AlxGa1-xAs/In0.2Ga0.8As/GaAs with those of conventional donor layer (x = 0.15 and x = 0.25) and with AlAs nanoinserts around the delta-Si layer or AlAs: delta-Si donor layer is presented. The structures with added AlAs layers exhibit electron concentration decrease, combined with increased electron mobility. This effect is related to the suppression of remote ionized impurity electron scattering, change of band structure and decreasing efficiency of silicon atoms doping when incorporating in pure AlAs.
- ПубликацияТолько метаданныеTHz quantum cascade lasers with two-photon emission in the gain module(2022) Khabibullin, R. A.; Pushkarev, S. S.; Galiev, R. R.; Ponomarev, D. S.; Vasil'evskii, I. S.; Vinichenko, A. N.; Klochkov, A. N.; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич; Клочков, Алексей НиколаевичA new lasing scheme with sequential two-photon emission in the gain module for terahertz quantum cascade laser (THz QCL) is proposed and experimentally demonstrated. THz QCLs based on MBE-and MOCVD-grown structures with two-photon design have a lasing frequency of 3.8 THz and maximum operation temperature around 100 K. © 2022 IEEE.
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