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Этрекова, Майя Оразгельдыевна

Организационные подразделения

Организационная единица

Институт нанотехнологий в электронике, спинтронике и фотонике

Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.

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Этрекова

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Майя Оразгельдыевна

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Теперь показываю 1 - 10 из 14

Только метаданные
Thin platinum films topology formation on ceramic membranes
(2020) Samotaev, N.; Oblov, K.; Etrekova, M.; Ivanova, A.; Veselov, D.; Gorshkova, A.; Самотаев, Николай Николаевич; Облов, Константин Юрьевич; Этрекова, Майя Оразгельдыевна; Иванова, Анастасия Владимировна; Веселов, Денис Сергеевич
© 2020 Trans Tech Publications Ltd, Switzerland.This article presents the technological aspects of experiments on the stable topological patterns formation from thin films of platinum on ceramic membranes. Platinum thin films were deposited by magnetron sputtering on a clean or pre-activated laser ceramics surface. After the deposition of platinum films, the method of various short-term laser irradiation was attempted to form a topological pattern. The results are discussed.
Только метаданные
SnO2-Pd as a Gate Material for the Capacitor Type Gas Sensor
(2019) Samotaev, N.; Oblov, K.; Litvinov, A.; Etrekova, M.; Самотаев, Николай Николаевич; Облов, Константин Юрьевич; Литвинов, Артур Васильевич; Этрекова, Майя Оразгельдыевна
© 2019 IEEE.The article describes the result of the use SnO2-Pd thin films as a gate for structure measured ppb range of NO2 gas by the capacitive method. The technological aspects of fabrication SnO2-Pd gate and one comparison by metrological parameters with the classical Pd gate field effect sensor are discussed. The use of SnO2-Pd material allows improvement in sensitivity of NO2 by an order of magnitude compare the classical Pd based gate field effect sensors.
Только метаданные
Printed Miniaturized Platinum Heater on Ultra-Thin Ceramic Membrane for MOX Gas Sensors
(2021) Fritsch, M.; Mosch, S.; Vinnichenko, M.; Trofimenko, N.; Samotaev, N.; Etrekova, M.; Filipchuk, D.; Самотаев, Николай Николаевич; Этрекова, Майя Оразгельдыевна
© 2021, Springer Nature Switzerland AG.The combination of aerosol-jet printing and laser micromilling technology makes it possible to fabricate the ceramics MEMS platforms and SMD packages by using their digital models. It is shown that combination of platinum metallization for the heater and ceramic materials is the best choice for the microelectronic MEMS actuator and sensor package which should be installed in devices aimed for work under harsh environmental conditions. The developed metal-oxide semiconductor gas sensors in miniaturized package with low power consumption can be extremely useful in modern agriculture facilities. The idea of their integration into livestock facilities, food-storage, forestry, fish farming and horticulture seems quite promising for developing smart agriculture, where devices must work under harsh environmental conditions such as high humidity level and temperature. To fulfill the demand of these types of sensors their mass production should be cheap and not require a clean room. In this work we present a way of fabrication of all parts of gas sensor including a package using only one setup, which allows us to reduce the cost of the final product and simplify the whole production process in order to make the technology available for many different agricultural applications.
Только метаданные
Investigation of Selectivity and Reproducibility Characteristics of Gas Capacitive MIS Sensors
(2021) Mikhailov, A.; Etrekova, M.; Litvinov, A.; Samotaev, N.; Filipchuk, D.; Oblov, K.; Этрекова, Майя Оразгельдыевна; Литвинов, Артур Васильевич; Самотаев, Николай Николаевич; Облов, Константин Юрьевич
© 2021, Springer Nature Switzerland AG.The influence of the dielectric material (Ta2O5, Si3N4, (ZrO2)10%(TiO2)90% and SnO2), its formation methods (pulsed laser deposition, plasma-chemical method, sol-gel method, reactive magnetron sputtering) and technological post-processing (forming gas annealing) has been investigated. It is shown that different methods of dielectric material obtaining affect the temperature of maximum sensitivity and response time of gas sensors. However, there is no significant improvement in selectivity in the ppb concentration range. A two-electrode capacitive sensor element was manufactured and tested. The using of two-electrode MIS sensor gives some improvement in selectivity but does not justify the cost of increasing the size and power consumption of the sensors. The reproducibility of characteristics of MIS structures of Pd-SiO2-Si and Pd-Ta2O5-SiO2-Si in sensitivity and response time was studied. More than 90% of suitable MIS structures after forming gas annealing (40 h at TMIS = 130 ℃ in a medium of 2% vol.d. H2 + air) have limit of hydrogen detection 150 ± 75 ppb and characteristic response times to supply and removal of 5 ppm H2 τ0.9 = 5 ± 3 min and τ0.1 = 8 ± 5 min, respectively. It is shown that if the sensor has the greatest sensitivity to hydrogen, then for all other gases it will be also the most sensitive among others. The stability to the effects of NO2 concentration overload was investigated. It is shown that the 1000-fold NO2 concentration overload does not poison the sensor.
Только метаданные
SOI Based Micro-Bead Catalytic Gas Sensor
(2021) Biro, F.; Ducso, C.; Barsony, I.; Samotaev, N.; Pisliakov, A.; Filipchuk, D.; Etrekova, M.; Самотаев, Николай Николаевич; Этрекова, Майя Оразгельдыевна
© 2021, Springer Nature Switzerland AG.One of the most dangerous threats to everyday life and industrial activity is the possible explosion of earth gas, which can occur in various conditions, but usually occurs due to an excess of explosive gases in an enclosed environment. In order to protect people at their home and workplace, several types of gas sensors have been developed. Nevertheless, one of the most useful devices for explosive and combustive gases detection is the catalytic gas sensor. This type of sensors has shown a good performance in detecting of flammable gases with concentration close to the lower explosion limit (LEL). In order to meet the growing need for portable devices further evolution of these gas sensors is required to make them smaller and reduce the power consumption. To achieve this goal it is essential to reduce the 120 to 150 mW power dissipation of the Pt-coil based sensors (pellistors). Low Power Thermocatalytic Sensors manufactured with SOI (silicon on insulator) technology can be functional at temperatures below 600 ℃ with the power consumption in a range of 20–50 mW. The current aim of researches is the elaboration of novel sensor processing and development of nanostructured catalyst layer which is stable and effective at high temperatures and compatible with microelectronic silicon MEMS technology.
Только метаданные
Hydrogen concentration control in oil-filled power transformers using field effect capacitive gas sensors
(2021) Litvinov, A.; Samotaev, N.; Etrekova, M.; Ivanova, A.; Filipchuk, D.; Литвинов, Артур Васильевич; Самотаев, Николай Николаевич; Этрекова, Майя Оразгельдыевна; Иванова, Анастасия Владимировна
© 2021 The Author(s).A simple method is demonstrated for hydrogen concentrations measurement directly in transformer oil and in the gas space above it use a highly sensitive (at the level of units and fractions of ppm) gas sensor based on a metal-insulator-semiconductor capacitive structure (MIS sensor). The results obtained can be used in online monitoring systems and predicting the power transformers integral performance, in particular those that have been put into operation long ago, by tracking slow and invisible at the initial stage aging processes of current-carrying connections and structural elements.
Только метаданные
Selective Ammonia Detection by Field Effect Gas Sensor as an Instrumentation Basis for HP-Infection Primary Diagnosis
(2022) Mikhailov, A.; Samotaev, N.; Etrekova, M.; Litvinov, A.; Самотаев, Николай Николаевич; Этрекова, Майя Оразгельдыевна; Литвинов, Артур Васильевич
© 2022, The Author(s), under exclusive license to Springer Nature Switzerland AG.The clinical tests of device based on Metal Insulator Semiconductor Field Effect (MIS-FE) gas sensor for Helicobacter pylori infection diagnostics (HP-infection) are done by breath test method. This method is based on detecting increase ammonia concentration in patient’s exhaled air after reception of carbamide water solution. The device’s stable operation is based on MIS-FE gas sensor’s high sensitivity to ammonia, sensor’s parameters stability as well as especially developed two channels gas sampling system.
Открытый доступ
Combination of Material Processing and Characterization Methods for Miniaturization of Field-Effect Gas Sensor
(2023) Samotaev, N.; Litvinov, A.; Oblov, K.; Etrekova, M.; Podlepetsky, B.; Dzhumaev, P. S.; Самотаев, Николай Николаевич; Литвинов, Артур Васильевич; Облов, Константин Юрьевич; Этрекова, Майя Оразгельдыевна; Подлепецкий, Борис Иванович; Джумаев, Павел Сергеевич
The technological approach for the low-scale production of field-effect gas sensors as electronic components for use in non-lab ambient environments is described. In this work, in addition to the mechanical protection of a gas-sensitive structure, an emphasis was also placed on the very topical issue of thermal stabilization around the one temperature point, even if it is several degrees higher than the surrounding one, which will probably also be useful for any type of application for many types of field-effect sensors. Considerable attention was paid to the characterization of the results obtained by various invasive and non-invasive methods for diagnosing the manufactured construction. The technology described in this article occupies an intermediate position between laboratory samples tested in clean rooms with stable ambient atmospheres, and experimental and small-scale production sensors designed for real operating conditions to solve the narrow application of measuring low concentrations of hydrogen.
Открытый доступ
MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors
(2023) Litvinov, A.; Etrekova, M.; Podlepetsky, B.; Samotaev, N.; Oblov, K.; Литвинов, Артур Васильевич; Этрекова, Майя Оразгельдыевна; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич; Облов, Константин Юрьевич
The features of the wide band gap SiC semiconductor use in the capacitive MOSFE sensors structure in terms of the hydrogen gas sensitivity effect, the response speed, and the measuring signals optimal parameters are studied. Sensors in a high-temperature ceramic housing with the Me/Ta2O5/SiCn+/4H-SiC structures and two types of gas-sensitive electrodes were made: Palladium and Platinum. The effectiveness of using Platinum as an alternative to Palladium in the MOSFE-Capacitor (MOSFEC) gas sensors high-temperature design is evaluated. It is shown that, compared with Silicon, the use of Silicon Carbide increases the response rate, while maintaining the sensors high hydrogen sensitivity. The operating temperature and test signal frequency influence for measuring the sensor s capacitance on the sensitivity to H2 have been studied.
Открытый доступ
Structure and Technological Parameters’ Effect on MISFET-Based Hydrogen Sensors’ Characteristics
(2023) Podlepetsky, B.; Samotaev, N.; Etrekova, M.; Litvinov, A.; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич; Этрекова, Майя Оразгельдыевна; Литвинов, Артур Васильевич
The influence of structure and technological parameters (STPs) on the metrological characteristics of hydrogen sensors based on MISFETs has been investigated. Compact electrophysical and electrical models connecting the drain current, the voltage between the drain and the source and the voltage between the gate and the substrate with the technological parameters of the n-channel MISFET as a sensitive element of the hydrogen sensor are proposed in a general form. Unlike the majority of works, in which the hydrogen sensitivity of only the threshold voltage of the MISFET is investigated, the proposed models allow us to simulate the hydrogen sensitivity of gate voltages or drain currents in weak and strong inversion modes, taking into account changes in the MIS structure charges. A quantitative assessment of the effect of STPs on MISFET performances (conversion function, hydrogen sensitivity, gas concentration measurement errors, sensitivity threshold and operating range) is given for a MISFET with a Pd-Ta2O5-SiO2-Si structure. In the calculations, the parameters of the models obtained on the basis of the previous experimental results were used. It was shown how STPs and their technological variations, taking into account the electrical parameters, can affect the characteristics of MISFET-based hydrogen sensors. It is noted, in particular, that for MISFET with submicron two-layer gate insulators, the key influencing parameters are their type and thickness. Proposed approaches and compact refined models can be used to predict performances of MISFET-based gas analysis devices and micro-systems.