Персона: Петров, Андрей Григорьевич
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Андрей Григорьевич
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- ПубликацияТолько метаданныеLeakage Currents Automated Monitoring System for Memory ICs under Dose Exposure(2021) Gracheva, A. A.; Shvetsov-Shiovsky, I. I.; Shmakov, S. B.; Petrov, A. G.; Yanenko, A. V.; Швецов-Шиловский, Иван Иванович; Шмаков, Сергей Борисович; Петров, Андрей Григорьевич; Яненко, Андрей Викторович© 2021 IEEE.The paper presents an automated control system for leakage currents monitoring in memory ICs based on National Instruments PXI platform. One of the two standard low-level boards used in our laboratory has been modified with an intermediate board to measure the leakage currents. The ability to break the monitored lines was implemented using relays on the intermediate board. Also, lines were added for relay control, and connectors were added for measuring leakage currents and memory access time. After successful testing, a replacement for the second lower-level board was developed and manufactured. A complete list of used equipment is presented, the advantages of using the NI PXI-4141 source measurement unit and possible variants for its replacement were described. The software and front control panel of the automated system were presented. The process of monitoring the leakage current and the specifics of its measurement were described. The features of control and data lines commutation were described. After testing the automated system for the correct commutation, it was used to monitor leakage currents during TID tests. The experimental results of monitoring the leakage current along 7 lines are presented (CE, WE, OE, DQ0, DQ7, A0, A7). The test results, possible options for equipment and a block diagram of the automated system are presented.
- ПубликацияТолько метаданныеSolid-State Drives Parameters Control System for Ionizing Radiation Tests(2021) Chepov, V. A.; Shmakov, S. B.; Shvetsov-Shiovsky, I. I.; Petrov, A. G.; Kalashnikov, V. D.; Шмаков, Сергей Борисович; Швецов-Шиловский, Иван Иванович; Петров, Андрей Григорьевич; Калашников, Владислав Дмитриевич© 2021 IEEE.The paper describes an automated system for monitoring the parameters of solid-state drives under the influence of ionizing radiation using National Instruments equipment and NI LabVIEW software. The paper presents a block diagram of a test bench developed based on the National Instruments hardware complex. It allows us to supply voltage to a device under test (DUT), measure the value of the DUT current consumption, and carry out functional control of solid-state drives with NAND flash memory and SATA and USB interfaces in order to register single event latch-ups (SEL) and the loss of the device's ability to read and rewrite information. The paper provides a detailed description of the functional tools included in the software that was developed using the NI LabVIEW programming environment and used for reading and subsequent analysis of data on solid-state drives, as well as for writing new data and the ability to perform various operations on them. The paper describes the main steps of the total ionizing dose testing procedure that was carried out on solid-state drives. The results of the experiment are presented.
- ПубликацияТолько метаданныеEffects of space radiation on resistive memory and comparison with other types of non-volatile memory(2022) Shvetsov-Shilovskiy, I.; Boruzdina, A.; Chepov, V.; Petrov, A.; Ulanova, A.; Петров, Андрей Григорьевич; Уланова, Анастасия Владиславовна© 2022 IEEE.In this work we consider the prospect of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated. We also provide a comparative assessment of typical hardness levels for other types of non-volatile memories such as flash, ferroelectric (FRAM), magnetoresistive (MRAM) memory. We have summarized the data on SEE and TID hardness levels for different types of commercially available non-volatile memories.