Publication: Effects of space radiation on resistive memory and comparison with other types of non-volatile memory
Дата
2022
Авторы
Shvetsov-Shilovskiy, I.
Boruzdina, A.
Chepov, V.
Petrov, A.
Ulanova, A.
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© 2022 IEEE.In this work we consider the prospect of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated. We also provide a comparative assessment of typical hardness levels for other types of non-volatile memories such as flash, ferroelectric (FRAM), magnetoresistive (MRAM) memory. We have summarized the data on SEE and TID hardness levels for different types of commercially available non-volatile memories.
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Effects of space radiation on resistive memory and comparison with other types of non-volatile memory / Shvetsov-Shilovskiy, I. [et al.] // Moscow Workshop on Electronic and Networking Technologies, MWENT 2022 - Proceedings. - 2022. - 10.1109/MWENT55238.2022.9802312